Monte Carlo calculations of quantum yield in inhomogeneous PtSi/p-Si Schottky barriers

Monte Carlo calculations of quantum yield in PtSi/p-Si infrared detectors are carried out taking into account the presence of a spatially distributed barrier potential. In the 1-4 mu m wavelength range it is found that the spatial inhomogeneity of the barrier has no significant effect on the overall device photoresponse. However, above lambda = 4.0 mu m and particularly as the cut-off wavelength (lambda approximate to 5.5 mu m) is approached, these calculations reveal a difference between the homogeneous and inhomogeneous barrier photoresponse which becomes increasingly significant and exceeds 50% at lambda = 5.3 mu m. It is, in fact, the inhomogeneous barrier which displays an increased photoyield, a feature that is confirmed by approximate analytical calculations assuming a symmetric Gaussian spatial distribution of the barrier. Furthermore, the importance of the silicide layer thickness in optimizing device efficiency is underlined as a trade-off between maximizing light absorption in the silicide layer and optimizing the internal yield. The results presented here address important features which determine the photoyield of PtSi/Si Schottky diodes at energies below the Si absorption edge and just above the Schottky barrier height in particular.

Barrier characteristics of PtSi/p-Si schottky diodes as determined from I-V-T measurements

The current-voltage-temperature characteristics of PtSi/p-Si Schottky barrier diodes were measured in the temperature range 60-115 K. Deviation of the ideality factor from unity below 80 K may be modelled using the so-called T-0 parameter with T-0 = 18 K. It is also shown that the curvature in the Richardson plots may be remedied by using the flatband rather than the zero-bias saturation current density. Physically, the departure from ideality is interpreted in terms of an inhomogeneous Schottky contact. Here we determine a mean barrier height at T = 0 K, phi(b)(-0) = 223 mV, with an (assumed) Gaussian distribution of standard deviation sigma(phi) = 12.5 mV. These data are correlated with the zero-bias barrier height, phi(j)(0) = 192 mV (at T = 90 K), the photoresponse barrier height, phi(ph) = 205 mV, and the flatband barrier height, phi(fb) = 214 mV. Finally, the temperature coefficient of the flatband barrier was found to be -0.121 mV K-1, which is approximately equal to 1/2(dE(g)(i)/dT), thus suggesting that the Fermi level at the interface is pinned to the middle of the band gap.

PHOTOSIGNAL ENHANCEMENT IN AL-GAAS DIODES DUE TO SURFACE-PLASMONS AND GUIDED-WAVE MODES

Light of wavelength 632.8 nm and p-polarization is incident on a prism-air gap (varied from 0.7 to 7 mum)-Al-GaAs arrangement. Both the photosignal generated by the Schottky diode and the reflectance are measured as a function of the internal angle of incidence in the prism. There is significant, well-defined enhancement of the photosignal, up to a factor of approximately 7.5, associated with two different types of enhanced absorption modes. For air gaps <1.5 mum there is photosignal enhancement due to an enhanced absorption feature (reflectance dip) that occurs at an angle of incidence just above critical angle in the prism; this feature corresponds to the excitation of a surface plasmon polariton at the Al-air interface. For air gaps > 1 mum there are between one and ten photoresponse peaks at input angles less than the critical angle. The corresponding enhanced absorption features are due to leaky guided wave modes set up in the air gap.

ANALYSIS OF SURFACE-PLASMON POLARITON ENHANCEMENT IN PHOTODETECTION BY AL-GAAS SCHOTTKY DIODES

The surface plasmon polariton mediated photoresponse from Al-GaAs diodes is examined in a prism-air gap-diode configuration as a function of both the wavelength of the incident light and thickness of the Al electrode. The experimental data shows a pronounced dip in reflectance as a function of internal angle of incidence in the prism, due to the excitation of the surface plasmon polariton at the Al-air interface, and a corresponding peak in device photosignal. Careful modelling of reflectance and quantum efficiency data shows that the bulk of the signal is generated by light which is re-radiated from this surface mode into the semiconductor substrate where it is absorbed by the creation of electron-hole pairs in the depletion region. This holds for all the wavelengths used here (all are shorter than the GaAs absorption edge) and across the thickness range of the Al electrodes (20-50 nm). Quantum efficiencies in the range 0.5-22% and enhancement factors of typically 7.5 were recorded in this investigation.

INFRARED SURFACE-PLASMONS ON PLATINUM SILICIDE

It is shown that surface plasmons (SPs) are supported on thin PtSi films. Using a prism-air gap-sample configuration, p-polarised infra-red light (3.39-mu-m) has been coupled with approximately 95% efficiency to SPs on the silicide electrode of PtSi-Si Schottky barrier structures. Stimulating SPs offers both a means of optically characterising silicide films and of enhancing optical absorption with a view to significantly increasing the Schottky barrier photoresponse.

Electrospinning and characterization of supramolecular poly(4-vinyl pyridine)-small molecule complexes

La chimie supramoléculaire est basée sur l'assemblage non covalent de blocs simples, des petites molécules aux polymères, pour synthétiser des matériaux fonctionnels ou complexes. La poly(4-vinylpyridine) (P4VP) est l'une des composantes supramoléculaires les plus utilisées en raison de sa chaîne latérale composée d’une pyridine pouvant interagir avec de nombreuses espèces, telles que les petites molécules monofonctionnelles et bifonctionnelles, grâce à divers types d'interactions. Dans cette thèse, des assemblages supramoléculaires de P4VP interagissant par liaisons hydrogène avec de petites molécules sont étudiés, en ayant comme objectifs de faciliter l'électrofilage de polymères et de mieux comprendre et d'optimiser la photoréponse des matériaux contenant des dérivés d'azobenzène. Une nouvelle approche est proposée afin d'élargir l'applicabilité de l'électrofilage, une technique courante pour produire des nanofibres. À cet effet, un complexe entre la P4VP et un agent de réticulation bifonctionnel capable de former deux liaisons hydrogène, le 4,4'-biphénol (BiOH), a été préparé pour faciliter le processus d’électrofilage des solutions de P4VP. Pour mieux comprendre ce complexe, une nouvelle méthode de spectroscopie infrarouge (IR) a d'abord été développée pour quantifier l'étendue de la complexation. Elle permet de déterminer un paramètre clé, le rapport du coefficient d'absorption d'une paire de bandes attribuées aux groupements pyridines libres et liées par liaisons hydrogène, en utilisant la 4-éthylpyridine comme composé modèle à l’état liquide. Cette méthode a été appliquée à de nombreux complexes de P4VP impliquant des liaisons hydrogène et devrait être généralement applicable à d'autres complexes polymères. La microscopie électronique à balayage (SEM) a révélé l'effet significatif du BiOH sur la facilité du processus d’électrofilage de P4VP de masses molaires élevées et faibles. La concentration minimale pour former des fibres présentant des perles diminue dans le N, N'-diméthylformamide (DMF) et diminue encore plus lorsque le nitrométhane, un mauvais solvant pour la P4VP et un non-solvant pour le BiOH, est ajouté pour diminuer l'effet de rupture des liaisons hydrogène causé par le DMF. Les liaisons hydrogène dans les solutions et les fibres de P4VP-BiOH ont été quantifiées par spectroscopie IR et les résultats de rhéologie ont démontré la capacité de points de réticulation effectifs, analogues aux enchevêtrements physiques, à augmenter la viscoélasticité de solutions de P4VP pour mieux résister à la formation de gouttelettes. Cette réticulation effective fonctionne en raison d'interactions entre le BiOH bifonctionnel et deux chaînes de P4VP, et entre les groupements hydroxyles du BiOH complexé de manière monofonctionnelle. Des études sur d’autres agents de réticulation de faible masse molaire ont montré que la plus forte réticulation effective est introduite par des groupes d’acide carboxylique et des ions de zinc (II) qui facilitent le processus d’électrofilage par rapport aux groupements hydroxyles du BiOH. De plus, la sublimation est efficace pour éliminer le BiOH contenu dans les fibres sans affecter leur morphologie, fournissant ainsi une méthode élégante pour préparer des fibres de polymères purs dont le processus d’électrofilage est habituellement difficile. Deux complexes entre la P4VP et des azobenzènes photoactifs portant le même groupement tête hydroxyle et différents groupes queue, soit cyano (ACN) ou hydrogène (AH), ont été étudiés par spectroscopie infrarouge d’absorbance structurale par modulation de la polarisation (PM-IRSAS) pour évaluer l'impact des groupements queue sur leur performance lors de l'irradiation avec de la lumière polarisée linéairement. Nous avons constaté que ACN mène à la photo-orientation des chaînes latérales de la P4VP et des azobenzènes, tandis que AH mène seulement à une orientation plus faible des chromophores. La photo-orientation des azobenzènes diminue pour les complexes avec une teneur croissante en chromophore, mais l'orientation de la P4VP augmente. D'autre part, l'orientation résiduelle après la relaxation thermique augmente avec la teneur en ACN, à la fois pour le ACN et la P4VP, mais la tendance opposée est constatée pour AH. Ces différences suggèrent que le moment dipolaire a un impact sur la diffusion rotationnelle des chromophores. Ces résultats contribueront à orienter la conception de matériaux polymères contenant des azobenzène efficaces.

Photodetection with gate-controlled lateral BJTs from standard CMOS technology

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.

Investigations on the G-protein involved in Cnidarian phototransduction

This study aimed to investigate which genes Cnidaria use for photoreception and test whether Gi alpha subunit protein is involved in the phototransduction cascade, giving additional tools to investigate light-mediated behaviors, as nematocyte firing. Here, I engineered an opsin gene promoter construct useful to test whether nematocyte sensory cells express opsin gene. By determining the expression of one of the unique EST opsin genes of the eyeless hydrozoan Hydra magnipapillata genome in nematocyte sensory cells, we will be able to investigate whether light modulation is an ancestral feature in Cnidaria, and whether regulation of nematocyte discharge by opsin-mediated phototransduction predated this pathway’s function in cnidarian eyes. Nematocytes, the cnidarians stinging cells, discharge nematocysts to capture prey. As nematocysts are energetically expensive, the discharge is tightly regulated and occurs after proper chemical and mechanical stimulation. Cnidarians are also known to display a rich corpus of photobehaviors, which are often associated with activities that involve nematocytes. Previous experiments on nematocyst firing modulation show that light decreases nematocyte firing. This study contributed to confirm that bright light decreases the tendency for nematocytes to discharge in Haliplanella luciae. Similar findings in cubozoan and hydrozoan lead us to believe that light modulation of cnidocytes may be an ancestral feature of Cnidaria. Experimentally, I found no evidence that pertussis toxin, a Gi alpha subunit protein inhibitor, ablates Hydra magnipapillata photobehaviour, preliminary suggesting that Gi alpha subunit protein is not involved in photoresponse. I found no significant association between pertussis toxin and nematocyte firing in Haliplanella luciae both in conditions of dim and bright light, suggesting that Gi alpha subunit protein is not involved in photoresponse. We have preliminary evidence for a prevalence of photoreception over chemoreception, tending toward conditions of bright light. This finding may suggest the involvement of a Gs alpha subunit protein in Haliplanella luciae phototransduction pathway. While nematocyte chemo- and mechano-sensitivity have been extensively studied, further research is necessary to better understand what an ancestral phototransduction cascade looked like, and how opsin-based phototransduction acts to regulate nematocyte discharge.

Bacteriorhodopsin protein hybrids for chemical and biological sensing

Bacteriorhodopsin (bR), an optoelectric protein found in Halobacterium salinarum, has the potential for use in protein hybrid sensing systems. Bacteriorhodopsin has no intrinsic sensing properties, however molecular and chemical tools permit production of bR protein hybrids with transducing and sensing properties. As a proof of concept, a maltose binding protein-bacteriorhodopsin ([MBP]-bR) hybrid was developed. It was proposed that the energy associated with target molecule binding, maltose, to the hybrid sensor protein would provide a means to directly modulate the electrical output from the MBP-bR bio-nanosensor platform. The bR protein hybrid is produced by linkage between bR (principal component of purified purple membrane [PM]) and MBP, which was produced by use of a plasmid expression vector system in Escherichia coli and purified utilizing an amylose affinity column. These proteins were chemically linked using 1-ethyl-3-[3-dimethylaminopropyl]carbodiimide hydrochloride (EDC) and N-hydroxysuccinimide (NHS), which facilitates formation of an amide bond between a primary carboxylic acid and a primary amine. The presence of novel protein hybrids after chemical linkage was analyzed by SDSPAGE. Soluble proteins (MBP-only derivatives and unlinked MBP) were separated from insoluble proteins (PM derivatives and unlinked PM) using size exclusion chromatography. The putatively identified MBP-bR protein hybrid, in addition to unlinked bR, was collected. This sample was normalized for bR concentration to native PM and both were deposited onto indium tin oxide (ITO) coated glass slides by electrophoretic sedimentation. The photoresponse of both samples, activated using 100 Watt tungsten lamp at 10 cm distance, were equal at 175 mV. Testing of deposited PM with 1 mM sucrose or 1 mM maltose showed no change in the photoresponse of the xiv material, however addition of 1 mM maltose to the deposited MBP-bR linked hybrid material elicited a 57% decrease in photoresponse indicating a positive response for targeting of maltose. This chemically linked MBP-bR hybrid protein, with bacteriorhodopsin, as a photoresponsive transducing substrate, shows promise for creation of a universal sensing array by attachment of other pertinent sensing materials, in lieu of the maltose binding protein utilized. This strategy would allow significant reduction in sensor size, while increasing responsiveness and sensitivity at nano and picomolar levels.

Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth

In this paper, we show room temperature operation of a quantum well infrared photodetector (QWIP) using lateral conduction through ohmic contacts deposited at both sides of two n-doped quantum wells. To reduce the dark current due to direct conduction in the wells, we apply an electric field between the quantum wells and two pinch-off Schottky gates, in a fashion similar to a field effect device. Since the normal incidence absorption is strongly reduced in intersubband transitions in quantum wells, we first analyze the response of a detector based on quantum dots (QD). This QD device shows photocurrent signal up to 150 K when it is processed in conventional vertical detector. However, it is possible to observe room temperature signal when it is processed in a lateral structure. Finally, the room temperature photoresponse of the QWIP is demonstrated, and compared with theory. An excellent agreement between the estimated and measured characteristics of the device is found

Synthesis and characterization of GaAsSb-capped InAs-based QDIPs

Quantum dot infrared photodetectors (QDIPs) are very attractive for infrared imaging applications due to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high quality active region which requires a structural optimization of the nanostructures. With using GaAsSb capping layer, the optical properties, such as the PL intensity and its full width at half maximum (FWHM), of InAs QDs have been improved in the range between 1.15 and 1.5 m, because of the reduction of the compressive strain in QDs and the increment of QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponse spectra from GaAsSb-capped InAs-based QDIPs

Far infrared photoconductivity in a silicon based material: vanadium supersaturated silicon

We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal transition limit show an important increase of the photoresponse with respect to a Si reference sample. Their photoresponse extends into the far infrared region and presents a sharp photoconductivity edge that moves towards lower photon energies as the temperature decreases. The increase of the value of the photoresponse is contrary to the classic understanding of recombination centers action and supports the predictions of the insulator-metal transition theory.

Towards a new generation of solar cells: silicon supersaturated with titanium or vanadium

We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) and titanium (Ti) at different doses and subsequently processed by pulsed-laser melting.

Intermediate Band Solar Cell with Extreme Broadband Spectrum Quantum Efficiency

We report, for the first time, about an intermediate band solar cell implemented with InAs/AlGaAs quantum dots whose photoresponse expands from 250 to ~ 6000  nm. To our knowledge, this is the broadest quantum efficiency reported to date for a solar cell and demonstrates that the intermediate band solar cell is capable of producing photocurrent when illuminated with photons whose energy equals the energy of the lowest band gap. We show experimental evidence indicating that this result is in agreement with the theory of the intermediate band solar cell, according to which the generation recombination between the intermediate band and the valence band makes this photocurrent detectable. © 2015 American Physical Society

The GTPase activating factor for transducin in rod photoreceptors is the complex between RGS9 and type 5 G protein β subunit

Proteins of the regulators of G protein signaling (RGS) family modulate the duration of intracellular signaling by stimulating the GTPase activity of G protein α subunits. It has been established that the ninth member of the RGS family (RGS9) participates in accelerating the GTPase activity of the photoreceptor-specific G protein, transducin. This process is essential for timely inactivation of the phototransduction cascade during the recovery from a photoresponse. Here we report that functionally active RGS9 from vertebrate photoreceptors exists as a tight complex with the long splice variant of the G protein β subunit (Gβ5L). RGS9 and Gβ5L also form a complex when coexpressed in cell culture. Our data are consistent with the recent observation that several RGS proteins, including RGS9, contain G protein γ-subunit like domain that can mediate their association with Gβ5 (Snow, B. E., Krumins, A. M., Brothers, G. M., Lee, S. F., Wall, M. A., Chung, S., Mangion, J., Arya, S., Gilman, A. G. & Siderovski, D. P. (1998) Proc. Natl. Acad. Sci. USA 95, 13307–13312). We report an example of such a complex whose cellular localization and function are clearly defined.