Modeling Reflective Bistability in Vertical-Cavity Semiconductor Optical Amplifiers

The characteristics of optical bistability in a vertical- cavity semiconductor optical amplifier (VCSOA) operated in reflection are reported. The dependences of the optical bistability in VCSOAs on the initial phase detuning and on the applied bias current are analyzed. The optical bistability is also studied for different numbers of superimposed periods in the top distributed bragg reflector (DBR) that conform the internal cavity of the device. The appearance of the X-bistable and the clockwise bistable loops is predicted theoretically in a VCSOA operated in reflection for the first time, to the best of our knowledge. Moreover, it is also predicted that the control of the VCSOA’s top reflectivity by the addition of new superimposed periods in its top DBR reduces by one order of magnitude the input power needed for the assessment of the X- and the clockwise bistable loop, compared to that required in in-plane semiconductor optical amplifiers. These results, added to the ease of fabricating two-dimensional arrays of this kind of device could be useful for the development of new optical logic or optical signal regeneration devices.

Low-power vertical cavity NAND gate

The study of the Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs) for optical signal processing applications is increasing his interest. Due to their particular structure, the VCSOAs present some advantages when compared to their edge-emitting counterparts including low manufacturing costs, high coupling efficiency to optical fibers and the ease to fabricate 2-D arrays of this kind of devices. As a consequence, all-optical logic gates based on VCSOAs may be very promising devices for their use in optical computing and optical switching in communications. Moreover, since all the boolean logic functions can be implemented by combining NAND logic gates, the development of a Vertical-Cavity NAND gate would be of particular interest. In this paper, the characteristics of the dispersive optical bistability appearing on a VCSOA operated in reflection are studied. A progressive increment of the number of layers compounding the top Distributed Bragg Reflector (DBR) of the VCSOA results on a change on the shape of the appearing bistability from an S-shape to a clockwise bistable loop. This resulting clockwise bistability has high on-off contrast ratio and input power requirements one order of magnitude lower than those needed for edge-emitting devices. Based on these results, an all-optical vertical-cavity NAND gate with high on-off contrast ratio and an input power for operation of only 10|i\V will be reported in this paper.

High data rate modulation of high power 1060-nm DBR tapered lasers with separate contacts

Direct optical modulation at 2.5 Gb/s with amplitude of more than 0.5 W has been demonstrated in single longitudinal mode distributed Bragg reflector tapered lasers emitting at 1060 nm with separated injection of the ridge waveguide and tapered sections. The modulating signal of ~110 mA peak to peak was applied to the ridge waveguide section, yielding a high modulation efficiency of ~5 W/A. The large-signal frequency response of the experimental set-up was limited by the bandwidth of the electrical amplifier rather than by the internal dynamics of the laser, indicating that higher bit rates could be achieved with improved driving electronics.

Time resolved bit error rate analysis of a fast switching tunable laser for use in optically switched networks

We investigate the use of different direct detection modulation formats in a wavelength switched optical network. We find the minimum time it takes a tunable sampled grating distributed Bragg reflector laser to recover after switching from one wavelength channel to another for different modulation formats. The recovery time is investigated utilizing a field programmable gate array which operates as a time resolved bit error rate detector. The detector offers 93 ps resolution operating at 10.7 Gb/s and allows for all the data received to contribute to the measurement, allowing low bit error rates to be measured at high speed. The recovery times for 10.7 Gb/s non-return-to-zero on–off keyed modulation, 10.7 Gb/s differentially phase shift keyed signal and 21.4 Gb/s differentially quadrature phase shift keyed formats can be as low as 4 ns, 7 ns and 40 ns, respectively. The time resolved phase noise associated with laser settling is simultaneously measured for 21.4 Gb/s differentially quadrature phase shift keyed data and it shows that the phase noise coupled with frequency error is the primary limitation on transmitting immediately after a laser switching event.

Optical burst-switched SSB-OFDM using a fast switching SG-DBR laser

The application of orthogonal frequency-division multiplexing (OFDM) in an optical burst-switched system employing a single fast switching sample grating-distributed Bragg reflector (SG-DBR) laser is demonstrated experimentally. The effect of filter profiles compatible with 50, 25, and 12.5 GHz wavelength-division multiplexing grids on the system is investigated with system performance examined in terms of error vector magnitude per subcarrier for OFDM burst data beginning at various times after a switching event. Additionally the placement of the OFDM training sequence within the data burst and its effect on the system is investigated.

Phase noise influence in coherent optical DnPSK systems with DSP based dispersion compensation

We present a comparative study of the influence of dispersion induced phase noise for n-level PSK systems. From the analysis, we conclude that the phase noise influence for classical homodyne/heterodyne PSK systems is entirely determined by the modulation complexity (expressed in terms of constellation diagram) and the analogue demodulation format. On the other hand, the use of digital signal processing (DSP) in homodyne/intradyne systems renders a fiber length dependence originating from the generation of equalization enhanced phase noise. For future high capacity systems, high constellations must be used in order to lower the symbol rate to practically manageable speeds, and this fact puts severe requirements to the signal and local oscillator (LO) linewidths. Our results for the bit-error-rate (BER) floor caused by the phase noise influence in the case of QPSK, 16PSK and 64PSK systems outline tolerance limitations for the LO performance: 5 MHz linewidth (at 3-dB level) for 100 Gbit/s QPSK; 1 MHz for 400 Gbit/s QPSK; 0.1 MHz for 400 Gbit/s 16PSK and 1 Tbit/s 64PSK systems. This defines design constrains for the phase noise impact in distributed-feed-back (DFB) or distributed-Bragg-reflector (DBR) semiconductor lasers, that would allow moving the system capacity from 100 Gbit/s system capacity to 400 Gbit/s in 3 years (1 Tbit/s in 5 years). It is imperative at the same time to increase the analogue to digital conversion (ADC) speed such that the single quadrature symbol rate goes from today's 25 GS/s to 100 GS/s (using two samples per symbol). © 2014 by Walter de Gruyter Berlin/Boston.

Time resolved bit error rate analysis of a fast switching tunable laser for use in optically switched networks

We investigate the use of different direct detection modulation formats in a wavelength switched optical network. We find the minimum time it takes a tunable sampled grating distributed Bragg reflector laser to recover after switching from one wavelength channel to another for different modulation formats. The recovery time is investigated utilizing a field programmable gate array which operates as a time resolved bit error rate detector. The detector offers 93 ps resolution operating at 10.7 Gb/s and allows for all the data received to contribute to the measurement, allowing low bit error rates to be measured at high speed. The recovery times for 10.7 Gb/s non-return-to-zero on–off keyed modulation, 10.7 Gb/s differentially phase shift keyed signal and 21.4 Gb/s differentially quadrature phase shift keyed formats can be as low as 4 ns, 7 ns and 40 ns, respectively. The time resolved phase noise associated with laser settling is simultaneously measured for 21.4 Gb/s differentially quadrature phase shift keyed data and it shows that the phase noise coupled with frequency error is the primary limitation on transmitting immediately after a laser switching event.

Quantum dot-based terahertz photoconductive antennas

We present novel Terahertz (THz) emitting optically pumped Quantum Dot (QD) photoconductive (PC) materials and antenna structures on their basis both for pulsed and CW pumping regimes. Full text Quantum dot and microantenna design - Presented here are design considerations for the semiconductor materials in our novel QD-based photoconductive antenna (PCA) structures, metallic microantenna designs, and their implementation as part of a complete THz source or transceiver system. Layers of implanted QDs can be used for the photocarrier lifetime shortening mechanism[1,2]. In our research we use InAs:GaAs QD structures of varying dot layer number and distributed Bragg reflector(DBR)reflectivity range. According to the observed dependence of carrier lifetimes on QD layer periodicity [3], it is reasonable to assume that electron lifetimes can be potentially reduced down to 0.45ps in such structures. Both of these features; long excitation wavelength and short carriers lifetime predict possible feasibility of QD antennas for THz generation and detection. In general, relatively simple antenna configurations were used here, including: coplanar stripline (CPS); Hertzian-type dipoles; bow-ties for broadband and log-spiral(LS)or log-periodic(LP)‘toothed’ geometriesfor a CW operation regime. Experimental results - Several lasers are used for antenna pumping: Ti:Sapphire femtosecond laser, as well as single-[4], double-[5] wavelength, and pulsed [6] QD lasers. For detection of the THz signal different schemes and devices were used, e.g. helium-cooled bolometer, Golay cell and a second PCA for coherent THz detection in a traditional time-domain measurement scheme.Fig.1shows the typical THz output power trend from a 5 um-gap LPQD PCA pumped using a tunable QD LD with optical pump spectrum shown in (b). Summary - QD-based THz systems have been demonstrated as a feasible and highly versatile solution. The implementation of QD LDs as pump sources could be a major step towards ultra-compact, electrically controllable transceiver system that would increase the scope of data analysis due to the high pulse repetition rates of such LDs [3], allowing real-time THz TDS and data acquisition. Future steps in development of such systems now lie in the further investigation of QD-based THz PCA structures and devices, particularly with regards to their compatibilitywith QD LDs as pump sources. [1]E. U. Rafailov et al., “Fast quantum-dot saturable absorber for passive mode-locking of solid-State lasers,”Photon.Tech.Lett., IEEE, vol. 16 pp. 2439-2441(2004) [2]E. Estacio, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures. Appl.Phys.Lett., vol. 94 pp. 232104 (2009) [3]C. Kadow et al., “Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics,” Appl. Phys. Lett., vol. 75 pp. 3548-3550 (1999) [4]T. Kruczek, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, and E. U. Rafailov, “Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device,” Appl. Phys. Lett., vol. 101(2012) [5]R. Leyman, D. I. Nikitichev, N. Bazieva, and E. U. Rafailov, “Multimodal spectral control of a quantum-dot diode laser for THz difference frequency generation,” Appl. Phys. Lett., vol. 99 (2011) [6]K.G. Wilcox, M. Butkus, I. Farrer, D.A. Ritchie, A. Tropper, E.U. Rafailov, “Subpicosecond quantum dot saturable absorber mode-locked semiconductor disk laser, ” Appl. Phys. Lett. Vol 94, 2511 © 2014 IEEE.

Periodic polymer photonic bandgap structures for on-chip optical cavities

Integrated on-chip optical platforms enable high performance in applications of high-speed all-optical or electro-optical switching, wide-range multi-wavelength on-chip lasing for communication, and lab-on-chip optical sensing. Integrated optical resonators with high quality factor are a fundamental component in these applications. Periodic photonic structures (photonic crystals) exhibit a photonic band gap, which can be used to manipulate photons in a way similar to the control of electrons in semiconductor circuits. This makes it possible to create structures with radically improved optical properties. Compared to silicon, polymers offer a potentially inexpensive material platform with ease of fabrication at low temperatures and a wide range of material properties when doped with nanocrystals and other molecules. In this research work, several polymer periodic photonic structures are proposed and investigated to improve optical confinement and optical sensing. We developed a fast numerical method for calculating the quality factor of a photonic crystal slab (PhCS) cavity. The calculation is implemented via a 2D-FDTD method followed by a post-process for cavity surface energy radiation loss. Computational time is saved and good accuracy is demonstrated compared to other published methods. Also, we proposed a novel concept of slot-PhCS which enhanced the energy density 20 times compared to traditional PhCS. It combines both advantages of the slot waveguide and photonic crystal to localize the high energy density in the low index material. This property could increase the interaction between light and material embedded with nanoparticles like quantum dots for active device development. We also demonstrated a wide range bandgap based on a one dimensional waveguide distributed Bragg reflector with high coupling to optical waveguides enabling it to be easily integrated with other optical components on the chip. A flexible polymer (SU8) grating waveguide is proposed as a force sensor. The proposed sensor can monitor nN range forces through its spectral shift. Finally, quantum dot - doped SU8 polymer structures are demonstrated by optimizing spin coating and UV exposure. Clear patterns with high emission spectra proved the compatibility of the fabrication process for applications in optical amplification and lasing.

NUMERICAL ANALYSIS OF A NOVEL 980nm MICROCAVITY SEMICONDUCTOR OPTICAL AMPLIFIER WITH HIGH GAIN AND LOW NOISE

A novel microcavity semiconductor optical amplifier ( MCSOA) was proposed by incorporating top and bottom distributed Bragg reflectors ( DBRs) into the waveguide structure of conventional traveling-wave semiconductor optical amplifiers(TW-SOAs). The incoming( outgoing) light beam incidented onto (escaped from) the waveguide structure at a oblique angle through two optical windows, where the top DBR was etched away, and anti-reflection coating was deposited. The light beams inside the optical cavity were reflected repeatedly between two DBRs and propagated along waveguide in a zigzag optical path. The performance of the MCSOA was systematically investigated by extensive numerical simulation based on a traveling-wave model by taking into account the comprehensive effects of DBRs on both the amplification of signals and the filtering of spontaneous emission( SE). Our results show that the MCSOA is capable of achieving a fiber-to-fiber gain as high as 40dB and a low noise figure is less than 3.5dB.

Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors

A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.

Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy

Molecular beam epitaxy growth of ten-period lattice-matched InAlN/GaN distributed Bragg reflectors (DBRs) with peak reflectivity centered around 400nm is reported including optical and transmission electron microscopy (TEM) measurements [1]. Good periodicity heterostructures with crack-free surfaces were confirmed, but, also a significant residual optical absorption below the bandgap was measured. The TEM characterization ascribes the origin of this problem to polymorfism and planar defects in the GaN layers and to the existence of an In-rich layer at the InAlN/GaN interfaces. In this work, several TEM based techniques have been combined.

Switching and generation of ultrashort pulses using all-fibre devices

Serial and parallel interconnection of photonic devices is integral to the construction of any all-optical data processing system. This thesis presents results from a series of experiments centering on the use of the nonlinear-optical loop mirror (NOLM) switch in architectures for the manipulation and generation of ultrashort pulses. Detailed analysis of soliton switching in a single NOLM and cascade of two NOLM's is performed, centering on primary limitations to device operation, effect of cascading on amplitude response, and impact of switching on the characteristics of incident pulses. By using relatively long input pulses, device failure due to stimulated Raman generation is postponed to demonstrate multiple-peaked switching for the first time. It is found that while cascading leads to a sharpening of the overall switching characteristic, pulse spectral and temporal integrity is not significantly degraded, and emerging pulses retain their essential soliton character. In addition, by including an asymmetrically placed in-fibre Bragg reflector as a wavelength selective loss element in the basic NOLM configuration, both soliton self-switching and dual-wavelength control-pulse switching are spectrally quantised. Results are presented from a novel dual-wavelength laser configuration generating pulse trains with an ultra-low rms inter-pulse-stream timing jitter level of 630fs enabling application in ultrafast switching environments at data rates as high as 130GBits/s. In addition, the fibre NOLM is included in architectures for all-optical memory, demonstrating storage and logical inversion of a 0.5kByte random data sequence; and ultrafast phase-locking of a gain-switched distributed feedback laser at 1.062GHz, the fourteenth harmonic of the system baseband frequency. The stringent requirements for environmental robustness of these architectures highlight the primary weaknesses of the NOLM in its fibre form and recommendations to overcome its inherent drawbacks are presented.

Direct comparison of the gravimetric responsivities of ZnO-based FBARs and SMRs

Film bulk acoustic resonators (FBARs) and solidly mounted resonators (SMRs) have the potential to significantly improve upon the sensitivity and minimum detection limit of traditional gravimetric sensors based on quartz crystal microbalances (QCMs) and surface acoustic wave resonators (SAWs). To date, neither FBAR nor SMR devices have been demonstrated to be superior to the other; hence the choice between them depends primarily on the users' ability to design/fabricate membranes and/or Bragg reflectors. In this work, it is shown that identically designed FBAR and SMR devices resonating at the same frequency exhibit different responsivities to mass loadings, Rm, and that the SMRs are less responsive than the FBARs. For the specific device design and resonant frequency (~2 GHz) of the resonators presented here, the FBARs' mass responsivity is ~20% greater than that of the SMRs', and although this value is not universal for all possible device designs, it clearly shows that FBAR devices should be favoured over SMRs in gravimetric sensing applications where the FBARs' fragility is not an issue. Numerical calculations based on Mason's model offer an insight into the physical mechanisms behind the greater FBARs responsivity, and it was shown that the Bragg reflector has an effect on the acoustic load at one of the facets of the piezoelectric films which is in turn responsible for the SMRs' lower responsivity to mass loadings. © 2013 Elsevier B.V.

Blue-green optically pumped GaN-based vertical cavity surface emitting laser

Blue-green GaN-based vertical cavity surface emitting lasers (VCSELs) were fabricated with two dielectric Ta2O5/SiO2 distributed Bragg reflectors. Lasing action was observed at a wavelength of 498.8 nm at room temperature under optical pumping. Threshold energy density and emission linewidth were 189 mJ/cm(2) and 0.15 nm, respectively. The result demonstrates that blue-green VCSELs can be realised using III-nitride semiconductors.