Blue-green optically pumped GaN-based vertical cavity surface emitting laser


Autoria(s): Cai LE; Zhang JY; Zhang BP; Li SQ; Wang DX; Shang JZ; Lin F; Lin KC; Yu JZ; Wang QM
Data(s)

2008

Resumo

Blue-green GaN-based vertical cavity surface emitting lasers (VCSELs) were fabricated with two dielectric Ta2O5/SiO2 distributed Bragg reflectors. Lasing action was observed at a wavelength of 498.8 nm at room temperature under optical pumping. Threshold energy density and emission linewidth were 189 mJ/cm(2) and 0.15 nm, respectively. The result demonstrates that blue-green VCSELs can be realised using III-nitride semiconductors.

National High Technology Research Development Program of China 2006AA03Z409 This work was supported by the National High Technology Research and Development Program of China under grant no. 2006AA03Z409.

Identificador

http://ir.semi.ac.cn/handle/172111/6512

http://www.irgrid.ac.cn/handle/1471x/62994

Idioma(s)

英语

Fonte

Cai, LE ; Zhang, JY ; Zhang, BP ; Li, SQ ; Wang, DX ; Shang, JZ ; Lin, F ; Lin, KC ; Yu, JZ ; Wang, QM .Blue-green optically pumped GaN-based vertical cavity surface emitting laser ,ELECTRONICS LETTERS,2008 ,44(16): 972-974

Palavras-Chave #光电子学 #ROOM-TEMPERATURE
Tipo

期刊论文