Electronic, structural, and optical properties of crystalline yttria

The electronic structure of crystalline Y2O3 is investigated by first-principles calculations within the local-density approximation (LDA) of the density-functional theory. Results are presented for the band structure, the total density of states (DOS), the atom-and orbital-resolved partial DOS. effective charges, bond order, and charge-density distributions. Partial covalent character in the Y-O bonding is shown, and the nonequivalency of the two Y sites is demonstrated. The calculated electronic structure is compared with a variety of available experimental data. The total energy of the crystal is calculated as a function of crystal volume. A bulk modulus B of 183 Gpa and a pressure coefficient B' of 4.01 are obtained, which are in good agreement with compression data. An LDA band gap of 4.54 eV at Gamma is obtained which increases with pressure at a rate of dE(g)/dP = 0.012 eV/Gpa at the equilibrium volume. Also investigated are the optical properties of Y2O3 up to a photon energy of 20 eV. The calculated complex dielectric function and electron-energy-loss function are in good agreement with experimental data. A static dielectric constant of epsilon(O)= 3.20 is obtained. It is also found that the bottom of the conduction band consists of a single band, and direct optical transition at Gamma between the top of the valence band and the bottom of the conduction band may be symmetry forbidden.

Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model

Applying the model dielectric function method, we have expressed the absorption coefficient of GaSb analytically at room temperature relating to the contribution of various critical points of its electronic band structure. The calculated absorption spectrum shows good agreement with the reported experimental data obtained by spectral ellipsometry on nominally undoped sample. Based on this analytical absorption spectrum, we have qualitatively evaluated the response of active absorbing layer structure and its photoelectric conversion properties of GaSb thermophotovoltaic device on the perturbation of external thermal radiation induced by the varying radiator temperature or emissivity. Our calculation has demonstrated that desirable thickness to achieve the maximum conversion efficiency should be decreased with the increment of radiator temperature and the performance degradation brought by any structure deviation from its optimal one would be stronger meanwhile. For the popular radiator temperature, no more than 1500 K in a real solar thermophotovoltaic system, and typical doping profile in GaSb cell, a reasonable absorbing layer structure parameter should be controlled within 100-300 nm for the emitter while 3000-5000 nm for the base.

Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model

Radiant heat conversion performance dominated by the active layer of Ga0.84In0.16As0.14Sb0.86 diode has been systematically investigated based on an analytic absorption spectrum, which is suggested here by numerically fitting the limited experimental data. For the concerned diode configuration, our calculation demonstrates that the optimal base doping is 3-4 x 10(17) cm(-3), which is less sensitive to the variation of the external radiation spectrum. Given the scarcity of the alloy elements, an economical device configuration of the 0.2-0.6 mu m emitter and the 4-6 mu m base would be particularly acceptable because the corresponding conversion efficiency cannot exhibit discouraging degradation in comparison to the one for the optimal structure, the thickness of which may be up to 10 mu m. More importantly, the method we suggested here to calculate alloy absorption can be easily transferred to other composition, thus bringing great convenience for design or optimization of the optoelectronic device formed by these alloys.

Surface plasmon polariton propagation length: A direct comparison using photon scanning tunneling microscopy and attenuated total reflection

The propagation of surface plasmon polaritons (SPP's) is studied using a photon scanning tunneling microscope (PSTM) and conventional attenuated total reflection (ATR). The PSTM experiment uses localized (focused beam) launching or SPP's at a wavelength of 632.8 nm. Propagation of the SPP is observed as an exponentially decaying tail beyond the launch site acid the 1/e propagation length is measured directly for a series of Ag films of different thicknesses. The ATR measurements are used to characterize the thin film optical and thickness parameters, revealing, notably, the presence of a contaminating adlayer of Ag2S of typical dielectric function, 8.7 + i2.7, and thickness 1-2 nm. Values of the SPP propagation length, based on the ATR- derived film parameters used in the four-media implicit SPP dispersion relation, show very good agreement with those based on the PSTM images for the case of undercoupled or optimally coupled SPP modes. The observed propagation lengths are quantitatively analyzed taking explicit account of additional intrinsic damping due to the growth of the Ag2S layer and of reradiation of the SPP back into the prism outside the launch site. Finally, the PSTM images show excellent SPP beam confinement in the original propagation direction.

Ultrafast nonlinearities of minibands in metallodielectric Bragg resonators

The nonlinear properties of metallodielectric DBRs are investigated via optical pump-probe techniques using a widely tunable, dual-colour, high-repetition rate, ultrafast setup. As a consequence of the Bragg-arranged multilayers, the electric field penetrates to different depths of the nanostructure at different excitation resonances, strongly enhancing the intrinsic nonlinear response of the metal in comparison with bulk films. The analyzed spectral response of these structures reveals how their nonlinear behavior is dominated by the pump-induced modification of the metal dielectric function. Fitting the simulated changes of the optical resonances using transfer-matrix methods matches experiment well, and shows the key effects of the spectral dependence of the spatial mode profiles.

OPTIMIZATION OF THE SLOW-MODE PLASMON POLARITON IN LIGHT-EMITTING TUNNEL-JUNCTIONS

Light emitted from metal/oxide/metal tunnel junctions can originate from the slow-mode surface plasmon polariton supported in the oxide interface region. The effective radiative decay of this mode is constrained by competition with heavy intrinsic damping and by the need to scatter from very small scale surface roughness; the latter requirement arises from the mode's low phase velocity and the usual momentum conservation condition in the scattering process. Computational analysis of conventional devices shows that the desirable goals of decreased intrinsic damping and increased phase velocity are influenced, in order of priority, by the thickness and dielectric function of the oxide layer, the type of metal chosen for each conducting electrode, and temperature. Realizable devices supporting an optimized slow-mode plasmon polariton are suggested. Essentially these consist of thin metal electrodes separated by a dielectric layer which acts as a very thin (a few nm) electron tunneling barrier but a relatively thick (several 10's of nm) optically lossless region. (C) 1995 American Institute of Physics.

Performance of polarisation functionals for linear and nonlinear optical properties of bulk zinc chalcogenides ZnX (X=S,Se,Te).

We calculated the frequency dependent macroscopic dielectric function and second-harmonic generation of cubic ZnS, ZnSe and ZnTe within time-dependent density-polarisation functional theory. The macroscopic dielectric function is calculated in a linear response framework, and second-harmonic generation in a real-time framework. The macroscopic exchange–correlation electric field that enters the time-dependent Kohn–Sham equations and accounts for long range correlation is approximated as a simple polarisation functional αP, where P is the macroscopic polarisation. Expressions for α are taken from the recent literature. The performance of the resulting approximations for the exchange–correlation electric field is analysed by comparing the theoretical spectra with experimental results and results obtained at the levels of the independent particle approximation and the random-phase approximation. For the dielectric function we also compare with state-of-the art calculations at the level of the Bethe–Salpeter equation.

Crystal growth, Raman scattering and optical properties of the superconductor Cd2Re2O7(16O, 18O)/

Using the Physical Vapor Transport method, single crystals of Cd2Re207 have been grown, and crystals of dimensions up to 8x6x2 mm have been achieved. X-ray diffraction from a single crystal of Cd2Re207 has showed the crystal growth in the (111) plane. Powder X-ray diffraction measurements were performed on ^^O and ^^O samples, however no difference was observed. Assigning the space group Fd3m to Cd2Re207 at room temperature and using structure factor analysis, the powder X-ray diffraction pattern of the sample was explained through systematic reflection absences. The temperatiure dependence of the resistivity measurement of ^^O has revealed two structural phase transitions at 120 and 200 K, and the superconducting transition at 1.0 K. Using Factor Group Analysis on three different structiures of Cd2Re207, the number of IR and Raman active phonon modes close to the Brillouin zone centre have been determined and the results have been compared to the temperature-dependence of the Raman shifts of ^^O and ^*0 samples. After scaling (via removing Bose-Einstein and Rayleigh scattering factors from the scattered light) all spectra, each spectrum was fitted with a number of Lorentzian peaks. The temperature-dependence of the FWHM and Raman shift of mode Eg, shows the effects of the two structurjil phase transitions above Tc. The absolute reflectance of Cd2Re207 - '^O single crystals in the far-infrared spectral region (7-700 cm~^) has been measured in the superconducting state (0.5 K), right above the superconducting state (1.5 K), and in the normal state (4.2 K). Thermal reflectance of the sample at 0.5 K and 1.5 K indicates a strong absorption feature close to 10 cm~^ in the superconducting state with a reference temperature of 4.2 K. By means of Kramers-Kronig analysis, the absolute reflectance was used to calculate the optical conductivity and dielectric function. The real part of optical conductivity shows five distinct active phonon modes at 44, 200, 300, 375, and 575 cm~' at all temperatures including a Drude-like behavior at low frequencies. The imaginary part of the calculated dielectric function indicates a mode softening of the mode 44 cm~' below Tc.

Optical absorption studies of free (H2Pc) and rare earth (RePc) phthalocyanine doped borate glasses

Optical absorption studies of free base and rare earth incorporated phthalocyanine doped borate glass matrix are reported for the first lime. The absorption spectra recorded in the UV- VIS region show two well defined absorption bands of phthalocyanine (Pc) molecule, namely the Soret band (B) and the Q band. The Q band always shows its characteristic splitting in all the doped glass matrices and the intensities of these components are found to vary from one Pc to another. Some of the important optical parameters, namely optical absorption coefficient (a), molar extinction coefficient (ε), absorption cross section (σa), oscillator strength (f), electric dipole strength (q2), absorption half bandwidth (Δλ) of the principal optical transitions have also been evaluated. Moreover, the spectral dependence of refractive index (n) and thereby the optical dielectric constant (ε) on wavelength yielded values of carrier concentration to effective mass ratio (N/m*) of the phthalocyanine molecule in the present glassy systems. Optical band gap (Eg) and width of the band tail (Et) are computed and their variations among the prepared samples are also discussed.

Influence of the pseudopotential on the properties of liquid rubidium at 315 K

The influence of the pseudopotential on both the structure and the self-diffusion of liquid rubidium at the melting point has been investigated by means of molecular-dynamics calculations. The model potential considered has been computed from the pseudopotential of Ashcroft, the dielectric function of Geldart and Vosko, and a Born-Mayer term. Four different values for the core radius which enters as input in the pseudopotential have been considered. In this way we have been able to observe and interpret the effect of this contribution on the properties of the liquid.

Goldnanoteilchen auf Titandioxid

In dieser Arbeit wurde das Wachstum sowie die ultraschnelle Elektronendynamik des Oberflächenplasmon Polaritons von Goldnanoteilchen auf Titandioxid untersucht. Die Messung der Dephasierungszeit des Oberflächenplasmons von Nanoteilchen mit definierter Form und Größe erfolgte dabei mit der Methode des spektralen Lochbrennens. Die Nanoteilchen wurden durch Deposition von Goldatomen aus einem thermischen Atomstrahl mit anschließender Diffussion und Nukleation, d.h. Volmer-Weber-Wachstum, auf Titandioxidsubstraten hergestellt und mittels einer Kombination aus optischer Spektroskopie und Rasterkraftmikroskopie systematisch untersucht. Dabei lässt sich das Nanoteilchenensemble durch das mittlere Achsverhältnis und den mittleren Äquivalentradius charakterisieren. Die Messungen zeigen, dass die Proben große Größen- und Formverteilungen aufweisen und ein definierter Zusammenhang zwischen Größe und Form der Teilchen existiert. Während kleine Goldnanoteilchen nahezu kugelförmig sind, flachen die Teilchen mit zunehmender Größe immer mehr ab. Des Weiteren wurde in dieser Arbeit die Methode des lasergestützten Wachstums auf das System Gold auf Titandioxid angewendet. Systematische Untersuchungen zeigten, dass sich das Achsverhältnis der Teilchen durch geeignete Wahl von Photonenenergie und Fluenz des eingestrahlten Laserlichts definiert und gezielt vorgeben lässt. Die Methode des lasergestützten Wachstums erschließt damit den Bereich außerhalb der Zugänglichkeit des natürlichen Wachstums. Aufgrund der Formabhängigkeit der spektrale Lage der Plasmonresonanz ist man somit in der Lage, die optischen Eigenschaften der Nanoteilchen gezielt einzustellen und z.B. für technische Anwendungen zu optimieren. Die Untersuchung der ultraschnellen Elektronendynamik von Goldnanoteilchen auf Titandioxid mit äquivalenten Radien zwischen 8 bis 15 nm erfolgte in dieser Arbeit mit der Methode des spektralen Lochbrennes. Hierzu wurde die Dephasierungszeit des Oberflächenplasmons systematisch als Funktion der Photonenenergie in einem Bereich von 1,45 bis 1,85 eV gemessen. Es zeigte sich, dass die gemessenen Dephasierungszeiten von 8,5 bis 16,2 fs deutlich unter den in der dielektrischen Funktion von Gold enthaltenen Werten lagen, was den erwarteten Einfluss der reduzierten Dimension der Teilchen demonstriert. Um die Messwerte trotz verschiedener Teilchengrößen untereinander vergleichen und den Einfluss der intrinsischen Dämpfung quantifizieren zu können, wurde zusätzlich der Dämpfungsparameter A bestimmt. Die ermittelten A-Faktoren zeigten dabei eine starke Abhängigkeit von der Plasmonenergie. Für Teilchen mit Plasmonenergien von 1,45 bis 1,55 eV wurde ein Dämpfungsfaktor von A ~ 0,2 nm/fs ermittelt, der lediglich Oberflächenstreuung als dominierenden Dämpfungsmechanismus widerspiegelt. Hingegen wurde für Teilchen mit Plasmonenergien oberhalb von 1,55 eV ein drastischer Anstieg der Dämpfung auf A ~ 0,4 nm/fs beobachtet. Die erhöhte Dämpfung wurde dabei dem zusätzlichen Vorliegen einer chemischen Dämpfung durch das Titandioxidsubstrat zugeschrieben. Zusammenfassend zeigen die Ergebnisse somit, dass eine starke Abhängigkeit der chemischen Dämpfung von der Photonenenergie vorliegt. Es konnte erstmals nachgewiesen werden, dass die chemische Dämpfung erst ab einer bestimmten unteren Schwelle der Photonenenergie einsetzt, die für Goldnanoteilchen auf Titandioxid bei etwa 1,6 eV liegt.

The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/Al(x)Ga(1-x)As quantum wells

We determined by means of photoluminescence measurements the dependence on temperature of the transition energy of excitons in GaAs/Al(x)Ga(1-x)As quantum wells with different alloy concentrations (with different barrier heights). Using a fitting procedure, we determined the parameters which describe the behavior of the excitonic transition energy as a function of temperature according to three different theoretical models. We verified that the temperature dependence of the excitonic transition energy does not only depend on the GaAs material but also depends on the barrier material, i.e. on the alloy composition. The effect of confinement on the temperature dependence of the excitonic transition is discussed.

DFT study of the electronic, vibrational, and optical properties of SnO(2)

We report results on the electronic, vibrational, and optical properties of SnO(2) obtained using first-principles calculations performed within the density functional theory. All the calculated phonon frequencies, real and imaginary parts of complex dielectric function, the energy-loss spectrum, the refractive index, the extinction, and the absorption coefficients show good agreement with experimental results. Based on our calculations, the SnO(2) electron and hole effective masses were found to be strongly anisotropic. The lattice contribution to the low-frequency region of the SnO(2) dielectric function arising from optical phonons was also determined resulting the values of E > (1aSyen) (latt) (0) = 14.6 and E > (1ayen) (latt) (0) = 10.7 for directions perpendicular and parallel to the tetragonal c-axis, respectively. This is in excellent agreement with the available experimental data. After adding the electronic contribution to the lattice contribution, a total average value of E >(1)(0) = 18.2 is predicted for the static permittivity constant of SnO(2).

Effects of confinement on the electron-phonon interaction in Al(0.18)Ga(0.82)As/GaAs quantum wells

Photoluminescence measurements at different temperatures have been performed to investigate the effects of confinement on the electron-phonon interaction in GaAs/AlGaAs quantum wells (QWs). A series of samples with different well widths in the range from 150 up to 750 A was analyzed. Using a fitting procedure based on the Passler-p model to describe the temperature dependence of the exciton recombination energy, we determined a fit parameter which is related to the strength of the electron-phonon interaction. On the basis of the behavior of this fit parameter as a function of the well width thickness of the samples investigated, we verified that effects of confinement on the exciton recombination energy are still present in QWs with well widths as large as 450 angstrom. Our findings also show that the electron-phonon interaction is three times stronger in GaAs bulk material than in Al(0.18)Ga(0.82)As/GaAs QWs.

Electronic, vibrational and related properties of group IV metal oxides by ab initio calculations

We present our theoretical results for the structural, electronic, vibrational and optical properties of MO(2) (M = Sn, Zr, Hf and Ti) obtained by first-principles calculations. Relativistic effects are demonstrated to be important for a realistic description of the detailed structure of the electronic frequency-dependent dielectric function, as well as of the carrier effective masses. Based on our results, we found that the main contribution of the high values calculated for the oxides dielectric constants arises from the vibrational properties of these oxides, and the vibrational static dielectric constant values diminish with increasing pressure. (c) 2008 Elsevier B.V. All rights reserved.