Effects of confinement on the electron-phonon interaction in Al(0.18)Ga(0.82)As/GaAs quantum wells
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
20/10/2012
20/10/2012
2009
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Resumo |
Photoluminescence measurements at different temperatures have been performed to investigate the effects of confinement on the electron-phonon interaction in GaAs/AlGaAs quantum wells (QWs). A series of samples with different well widths in the range from 150 up to 750 A was analyzed. Using a fitting procedure based on the Passler-p model to describe the temperature dependence of the exciton recombination energy, we determined a fit parameter which is related to the strength of the electron-phonon interaction. On the basis of the behavior of this fit parameter as a function of the well width thickness of the samples investigated, we verified that effects of confinement on the exciton recombination energy are still present in QWs with well widths as large as 450 angstrom. Our findings also show that the electron-phonon interaction is three times stronger in GaAs bulk material than in Al(0.18)Ga(0.82)As/GaAs QWs. Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Brazilian agencies CAPES CNPq Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Fundação Araucária Fundacao Araucaria FBB FBB |
Identificador |
JOURNAL OF PHYSICS-CONDENSED MATTER, v.21, n.15, 2009 0953-8984 http://producao.usp.br/handle/BDPI/29403 10.1088/0953-8984/21/15/155601 |
Idioma(s) |
eng |
Publicador |
IOP PUBLISHING LTD |
Relação |
Journal of Physics-condensed Matter |
Direitos |
restrictedAccess Copyright IOP PUBLISHING LTD |
Palavras-Chave | #TEMPERATURE-DEPENDENCE #EXCITONIC TRANSITIONS #DIELECTRIC FUNCTION #BINDING-ENERGIES #BAND-GAPS #GAAS #SEMICONDUCTORS #PHOTOLUMINESCENCE #ALXGA1-XAS #LINEWIDTHS #Physics, Condensed Matter |
Tipo |
article original article publishedVersion |