Electronic, vibrational and related properties of group IV metal oxides by ab initio calculations


Autoria(s): Alves, Horacio Wagner Leite; SILVA, C. C.; Lino, Antonio Tadeu; Borges, Pablo Damasceno; Scolfaro, Luísa Maria Ribeiro; Silva Junior, Eronides Felisberto da
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

20/10/2012

20/10/2012

2008

Resumo

We present our theoretical results for the structural, electronic, vibrational and optical properties of MO(2) (M = Sn, Zr, Hf and Ti) obtained by first-principles calculations. Relativistic effects are demonstrated to be important for a realistic description of the detailed structure of the electronic frequency-dependent dielectric function, as well as of the carrier effective masses. Based on our results, we found that the main contribution of the high values calculated for the oxides dielectric constants arises from the vibrational properties of these oxides, and the vibrational static dielectric constant values diminish with increasing pressure. (c) 2008 Elsevier B.V. All rights reserved.

Identificador

APPLIED SURFACE SCIENCE, v.255, n.3, p.752-754, 2008

0169-4332

http://producao.usp.br/handle/BDPI/29415

10.1016/j.apsusc.2008.07.031

http://dx.doi.org/10.1016/j.apsusc.2008.07.031

Idioma(s)

eng

Publicador

ELSEVIER SCIENCE BV

Relação

Applied Surface Science

Direitos

restrictedAccess

Copyright ELSEVIER SCIENCE BV

Palavras-Chave #High-K oxides #Band structure #Phonon dispersion #Dielectric function #1ST-PRINCIPLES #REFLECTIVITY #HFO2 #SNO2 #Chemistry, Physical #Materials Science, Coatings & Films #Physics, Applied #Physics, Condensed Matter
Tipo

article

proceedings paper

publishedVersion