Electronic, vibrational and related properties of group IV metal oxides by ab initio calculations
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
20/10/2012
20/10/2012
2008
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Resumo |
We present our theoretical results for the structural, electronic, vibrational and optical properties of MO(2) (M = Sn, Zr, Hf and Ti) obtained by first-principles calculations. Relativistic effects are demonstrated to be important for a realistic description of the detailed structure of the electronic frequency-dependent dielectric function, as well as of the carrier effective masses. Based on our results, we found that the main contribution of the high values calculated for the oxides dielectric constants arises from the vibrational properties of these oxides, and the vibrational static dielectric constant values diminish with increasing pressure. (c) 2008 Elsevier B.V. All rights reserved. |
Identificador |
APPLIED SURFACE SCIENCE, v.255, n.3, p.752-754, 2008 0169-4332 http://producao.usp.br/handle/BDPI/29415 10.1016/j.apsusc.2008.07.031 |
Idioma(s) |
eng |
Publicador |
ELSEVIER SCIENCE BV |
Relação |
Applied Surface Science |
Direitos |
restrictedAccess Copyright ELSEVIER SCIENCE BV |
Palavras-Chave | #High-K oxides #Band structure #Phonon dispersion #Dielectric function #1ST-PRINCIPLES #REFLECTIVITY #HFO2 #SNO2 #Chemistry, Physical #Materials Science, Coatings & Films #Physics, Applied #Physics, Condensed Matter |
Tipo |
article proceedings paper publishedVersion |