Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model

Radiant heat conversion performance dominated by the active layer of Ga0.84In0.16As0.14Sb0.86 diode has been systematically investigated based on an analytic absorption spectrum, which is suggested here by numerically fitting the limited experimental data. For the concerned diode configuration, our calculation demonstrates that the optimal base doping is 3-4 x 10(17) cm(-3), which is less sensitive to the variation of the external radiation spectrum. Given the scarcity of the alloy elements, an economical device configuration of the 0.2-0.6 mu m emitter and the 4-6 mu m base would be particularly acceptable because the corresponding conversion efficiency cannot exhibit discouraging degradation in comparison to the one for the optimal structure, the thickness of which may be up to 10 mu m. More importantly, the method we suggested here to calculate alloy absorption can be easily transferred to other composition, thus bringing great convenience for design or optimization of the optoelectronic device formed by these alloys.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-20T08:08:21Z No. of bitstreams: 1 Evaluating 0.53 eV GaInAsSb thermophotovoltaic diode based on an analytical absorption model.pdf: 841879 bytes, checksum: e2c9f5f7edcea31837c6512b2de406d3 (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-20T08:28:01Z (GMT) No. of bitstreams: 1 Evaluating 0.53 eV GaInAsSb thermophotovoltaic diode based on an analytical absorption model.pdf: 841879 bytes, checksum: e2c9f5f7edcea31837c6512b2de406d3 (MD5)

Made available in DSpace on 2010-09-20T08:28:01Z (GMT). No. of bitstreams: 1 Evaluating 0.53 eV GaInAsSb thermophotovoltaic diode based on an analytical absorption model.pdf: 841879 bytes, checksum: e2c9f5f7edcea31837c6512b2de406d3 (MD5) Previous issue date: 2010

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