In vitro recording of neural activity using carbon nanosheet microelectrodes

The advent of nanotechnology has revolutionised our ability to engineer electrode interfaces. These are particularly attractive to measure biopotentials, and to study the nervous system. In this work, we demonstrate enhanced in vitro recording of neuronal activity using electrodes decorated with carbon nanosheets (CNSs). This material comprises of vertically aligned, free standing conductive sheets of only a few graphene layers with a high surfacearea- to-volume ratio, which makes them an interesting material for biomedical electrodes. Further, compared to carbon nanotubes, CNSs can be synthesised without the need for metallic catalysts like Ni, Co or Fe, thereby reducing potential cytotoxicity risks. Electrochemical measurements show a five times higher charge storage capacity, and an almost ten times higher double layer capacitance as compared to TiN. In vitro experiments were performed by culturing primary hippocampal neurons from mice on micropatterned electrodes. Neurophysiological recordings exhibited high signal-to-noise ratios of 6.4, which is a twofold improvement over standard TiN electrodes under the same conditions. © 2013 Elsevier Ltd. All rights reserved.

Research progress of electronic properties of self-assembled semiconductor quantum dots

Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optical effect. Due to its advantages of less crystal defects and relatively simpler fabrication technology, this material may be of important value in the research of future nanoelectronic device. In the order of vertical transport, lateral transport and charge storage, recent advances in the electronic properties of this material are brefly introduced, and the problems and perspectives are analyzed.

Design of triangular lattice photonic crystals using genetic algorithms

Genetic Algorithms (GAs) were used to design triangular lattice photonic crystals with large absolute band-gap. Considering fabricating issues, the algorithms represented the unit cell with large pixels and took the largest absolute band-gap under the fifth band as the objective function. By integrating Fourier transform data storage mechanism, the algorithms ran efficiently and effectively and optimized a triangular lattice photonic crystal with scatters in the shape of 'dielectric-air rod'. It had a large absolute band gap with relative width (ratio of gap width to midgap) 23.8%.

Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD

The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).

Two-dimensional photonic crystals with a large photonic band gap designed by a rapid genetic algorithm

We used Plane Wave Expansion Method and a Rapid Genetic Algorithm to design two-dimensional photonic crystals with a large absolute band gap. A filling fraction controlling operator and Fourier transform data storage mechanism had been integrated into the genetic operators to get desired photonic crystals effectively and efficiently. Starting from randomly generated photonic crystals, the proposed RGA evolved toward the best objectives and yielded a square lattice photonic crystal with the band gap (defined as the gap to mid-gap ratio) as large as 13.25%. Furthermore, the evolutionary objective was modified and resulted in a satisfactory PC for better application to slab system.

Dynamics of formation of defects in annealed InP

Dynamics of formation of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Incorporated hydrogen passivates vacancy at indium site from annihilation forming fully hydrogenated indium vacancy which dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.

Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD

The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).

Green electroluminescent polyfluorenes containing 1,8-naphthalimide moieties as color tuner

A series of copolymers (CNPFs) containing low-band-gap 1,8-naphthalimide moieties as color tuner was prepared by a Yamamoto coupling reaction of 2,7-dibromo-9,9-dioctylfluorene (DBF) and different amount of 4-(3,6-dibromocarbazol-9-yl)-N-(4'-tert-butyl-phenyl)-1,8-naphthalimide (Br-CN) (0.05-1 mol% feed ratio). The light emitting properties of the resulting copolymers showed a heavy dependence on the feed ratio. In photoluminescence (PL) studies, an efficient color tuning through the Forster energy transfer mechanism was revealed from blue to green as the increase of Br-CN content, while in electroluminescence (EL) studies, the color tuning was found to go through a charge trapping mechanism. It was found that by introduction of a very small amount of Br-CN (0.1-0.5 mol%) into polyfluorene, the emission color can be tuned from blue to pure green with Commission International de l'Echairage (CIE) coordinates being (0.21, 0.42) and (0.21, 0.48). A green emitting EL single-layer device based on CNPF containing 0.1 mol% of Br-CN showed good performances with a low turn-on voltage of 4.2 V, a brightness of 9104 cd/m(2), the maximum luminous efficiency of 2.74 cd/A and the maximum power efficiency of 1.51 lm/W.

The reduction of RE3+ in SrB6O10 prepared in air and the luminescence of SrB6O10 : RE2+ (RE=Eu, Sm, Tm)

The reduction of RE3+ to RE2+ (RE=Eu, Sm and Tm) in SrB6O10 prepared in air by high-temperature solid state reaction was observed. The luminescent properties of Eu2+ and Tm2+ show f-d transition and Sm2+ shows f-f transition at room temperature. Three crystallographic sites for Sm2+ in matrix are available. Vibronic transition of D-5(0)-F-7(0) of Sm2+ was studied. The coupled phonon energy about 108 cm(-1), was determined: from the vibronic transition. Due to the thermal population from D-5(0) level, (D1-FJ)-D-5-F-7 (J=0, 1, 2) transitions of Sm2+ were observed at room temperature. A charge compensation mechanism is proposed as a possible explanation.

The reduction of Eu3+ in SrB6O10 prepared in air and the luminescence of SrB6O10 : Eu

The reduction of Eu3+ to Eu2+ in SrB6O10 prepared in air by a high-temperature solid state reaction was studied. The luminescent properties of Eu2+ in this matrix show f-d broad band emission peaking at about 386 and 432 nm at room temperature. A charge compensation mechanism is proposed as a possible explanation. The luminescence of Eu3+ with f-f transitions was studied in this sample and reflected that the Eu3+ ion occupied a site with non-centro-symmetry. The ESR spectrum was used to detect the existence of Eu2+ in the samples. (C) 1998 Elsevier Science S.A.

Conversion from electronic conducting phase to redox conducting phase of polypyrrole

Square-wave voltommetry is used to study the oxidation of polypyrrole doped with dodecylsulfate. The net current curve in this experiment shows why the oxidation current does not display the capacitive-like shape common in cyclic voltammetry. In cyclic voltammetry, the redox behavior of polypyrrole is attributed to the size of dodecylsulfate, irreversible incorporation and the complete consumption of dodecylsulfate. After the polypyrrole film was scanned in aqueous NaCl solution, square wave voltammetric measurements show different results, indicating the change of the polymer nature with regard to the charge transport. This is explained by anion replacement, exclusion and the change of the charge transport mechanism.

Fabrication and characterization of doped and porous silicon nanowires as anodes for lithium ion batteries

By using Si(100) with different dopant type (n++-type (As) or p-type (B)), it is shown how metal-assisted chemically (MAC) etched silicon nanowires (Si NWs) can form with rough outer surfaces around a solid NW core for p-type NWs, and a unique, defined mesoporous structure for highly doped n-type NWs. High resolution electron microscopy techniques were used to define the characteristic roughening and mesoporous structure within the NWs and how such structures can form due to a judicious choice of carrier concentration and dopant type. Control of roughness and internal mesoporosity is demonstrated during the formation of Si NWs from highly doped n-type Si(100) during electroless etching through a systematic investigation of etching parameters (etching time, AgNO3 concentration, %HF and temperature). Raman scattering measurements of the transverse optical phonon confirm quantum size effects and phonon scattering in mesoporous wires associated with the etching condition, including quantum confinement effects for the nanocrystallites of Si comprising the internal structure of the mesoporous NWs. Laser power heating of NWs confirms phonon confinement and scattering from internal mesoporosity causing reduced thermal conductivity. The Li+ insertion and extraction characteristics at n-type and p-type Si(100) electrodes with different carrier density and doping type are investigated by cyclic voltammetry and constant current measurements. The insertion and extraction potentials are demonstrated to vary with cycling and the occurrence of an activation effect is shown in n-type electrodes where the charge capacity and voltammetric currents are found to be much higher than p-type electrodes. X-ray photo-electron spectroscopy (XPS) and Raman scattering demonstrate that highly doped n-type Si(100) retains Li as a silicide and converts to an amorphous phase as a two-step phase conversion process. The findings show the succinct dependence of Li insertion and extraction processes for uniformly doped Si(100) single crystals and how the doping type and its effect on the semiconductor-solution interface dominate Li insertion and extraction, composition, crystallinity changes and charge capacity. The effect of dopant, doping density and porosity of MAC etched Si NWs are investigated. The CV response is shown to change in area (current density) with increasing NW length and in profile shape with a changing porosity of the Si NWs. The CV response also changes with scan rate indicative of a transition from intercalation or alloying reactions, to pseudocapactive charge storage at higher scan rates and for p-type NWs. SEM and TEM show a change in structure of the NWs after Li insertion and extraction due to expansion and contraction of the Si NWs. Galvanostatic measurements show the cycling behavior and the Coulombic efficiency of the Si NWs in comparison to their bulk counterparts.

Electron-acoustic solitary waves in the presence of a suprathermal electron component

The nonlinear dynamics of electron-acoustic localized structures in a collisionless and unmagnetized plasma consisting of “cool” inertial electrons, “hot” electrons having a kappa distribution, and stationary ions is studied. The inertialess hot electron distribution thus has a long-tailed suprathermal (non-Maxwellian) form. A dispersion relation is derived for linear electron-acoustic waves. They show a strong dependence of the charge screening mechanism on excess suprathermality (through ?). A nonlinear pseudopotential technique is employed to investigate the occurrence of stationary-profile solitary waves, focusing on how their characteristics depend on the spectral index ?, and the hot-to-cool electron temperature and density ratios. Only negative polarity solitary waves are found to exist, in a parameter region which becomes narrower as deviation from the Maxwellian (suprathermality) increases, while the soliton amplitude at fixed soliton speed increases. However, for a constant value of the true Mach number, the amplitude decreases for decreasing ?.

Electrostatic waves in superthermal dusty plasmas: review of recent advancement

Real plasmas are often caracterized by the presence of excess energetic particle populations, resulting in a long-tailed non-Maxwellian distribution. In Space plasma physics, this phenomenon is usually modelled via a kappa-type distribution. This presentation is dedicated to an investigation, from first principles, of the effect of superthermality on the characteristics of dusty plasma modes. We employ a kappa distribution function to model the superthermality of the background components (electrons and/or ions). Background superthermality is shown to modify the charge screening mechanism in dusty plasmas, thus affecting the linear dispersion laws of both low- and higher frequency DP modes substantially. Various experimentally observed effects may thus be interpreted as manifestations of superthermality. Focusing on the features of nonlinear excitations (solitons) as they occur in different dusty plasma modes, we investigate the role of superthermality in their propagation dynamics (existence laws, stability profile) and characteristics (geometry).

DC electrical conductivity and phase transitions in (NH4)3H(SO4)2

Four distinct peaks are observed at 140, -26, -132 and -140°C in the sigma x* against T-1 plot between 200 and - 196°C for (NH4)3H(SO4)2, corresponding to four different phase transitions of which the one at -26°C is reported here for the first time. Data on doped samples reveal the charge transport mechanism in the crystal.