Dynamics of formation of defects in annealed InP
| Data(s) |
1998
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|---|---|
| Resumo |
Dynamics of formation of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Incorporated hydrogen passivates vacancy at indium site from annihilation forming fully hydrogenated indium vacancy which dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed. Dynamics of formation of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Incorporated hydrogen passivates vacancy at indium site from annihilation forming fully hydrogenated indium vacancy which dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:17Z (GMT). No. of bitstreams: 1 3029.pdf: 213859 bytes, checksum: e3c84d75f019952bc4fa4fd7e743515a (MD5) Previous issue date: 1998 SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Han YJ; Liu XL; Jiao JH; Lin LY .Dynamics of formation of defects in annealed InP .见：SPIE-INT SOC OPTICAL ENGINEERING .INTEGRATED OPTOELECTRONICS II, 3551,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,5-8 |
| Palavras-Chave | #光电子学 #defects formation #hydrogen related defects #semi-insulating #InP |
| Tipo |
会议论文 |
