Chaos in resonant-tunneling superlattices
| Data(s) |
26/01/2010
26/01/2010
1995
|
|---|---|
| Resumo |
Spatiotemporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal. |
| Formato |
4 p. application/pdf |
| Identificador |
0163-1829 http://hdl.handle.net/2445/10914 517061 |
| Idioma(s) |
eng |
| Publicador |
The American Physical Society |
| Relação |
Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.52.7849 Physical Review B, 1995, vol. 52, núm. 11, p. 7849-7852 |
| Direitos |
(c) The American Physical Society, 1995 info:eu-repo/semantics/openAccess |
| Palavras-Chave | #Semiconductors #Dinàmica de fluids #Efecte túnel #Semiconductors #Fluid dynamics #Tunneling (Physics) |
| Tipo |
info:eu-repo/semantics/article |
