Electronic states and magnetotransport in quantum waveguides with nonuniform magnetic fields

The electronic states and magnetotransport properties of quantum waveguides (QW's) in the presence of nonuniform magnetic fields perpendicular to the QW plane are investigated theoretically. It is found that the magnetoconductance of those structures as a function of Fermi energy exhibits stepwise variation or square-wave-like oscillations, depending on the specific distributions (both in magnitude and direction) of nonuniform magnetic fields in QW's. We have investigated the dual magnetic strip structures and three magnetic strip structures. The character of the magnetotransport is closely related to the effective magnetic potential and the energy-dispersion spectrum of electron in the structures. It is found that dispersion relations seem to be combined by different sets of dispersion curves that belong to different individual magnetic subwaveguides. The magnetic effective potential leads to the coupling of states and the substantial distortion of the original dispersion curves at the interfaces in which the abrupt change of magnetic fields appears. Magnetic scattering states are created. Only in some three magnetic strip structures, these scattering states produce the dispersion relations with oscillation structures superimposed on the bulk Landau levels. It is the oscillatory behavior in dispersions that leads to the occurrence of square-wave-like modulations in conductance.

Strong visible photoluminescence from amorphous silicon grains in a-SiOx:H films

Two strong luminescence bands were observed from a-SiOx:H in the spectral range of 550-900 nm at room temperature. One is a main broad peak which blueshifts with oxygen content and the other is a shoulder fixed at about 835 nm. In conjunction with TR and micro-Raman spectra, we have proposed that the main band may originate from the amorphous silicon grains embedded in SiOx network, while the shoulder might be due to some defects induced by excess-silicon in these films. (C) 1997 Elsevier Science Ltd.

Quantum dot superlattices and their conductance

The one-dimensional energy bands and corresponding conductivities of a T-shaped quantum-dot superlattice are studied in various cases: different periods, with potential barriers between dots, and in transverse electric fields. It is found that the conductivity of the superlattices has a similar energy relation to the conductance of a single quantum dot, but vanishes in the energy gap region. The energy band of a superlattice with periodically modulated conducting width in the perpendicular magnetic field is calculated for comparison with magneto-transport experiments. It is found that due to the edge state effect the electron has strong quantum transport features. The energy gaps change with the width of the channel, corresponding to the deep peaks in the conductance curve. This method of calculating the energy bands of quantum-dot superlattices is applicable to complex geometric structures without substantial difficulty. (C) 1997 American Institute of Physics.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Strong red light emission from silicon nanocrystals embedded in SIO2 matrix

In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.

High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures

A systematic study of electron cyclotron resonance (CR) in two sets of GaAs/Al0.3Ga0.7As modulation-doped quantum-well samples (well widths between 12 and 24 nm) has been carried out in magnetic fields up to 30 T. Polaron CR is the dominant transition in the region of GaAs optical phonons for the set of lightly doped samples, and the results are in good agreement with calculations that include the interaction with interface optical phonons. The results from the heavily doped set are markedly different. At low magnetic fields (below the GaAs reststrahlen region), all three samples exhibit almost identical CR which shows little effect of the polaron interaction due to screening and Pauli-principle effects. Above the GaAs LO-phonon region (B > similar to 23 T), the three samples behave very differently. For the most lightly doped sample (3 x 10(11) cm(-2)) only one transition minimum is observed, which can be explained as screened polaron CR. A sample of intermediate density (6 x 10(11) cm(-2)) shows two lines above 23 T; the higher frequency branch is indistinguishable from the positions of the single line of the low density sample. For the most heavily, doped sample (1.2 x 10(12) cm(-2)) there is no evidence of high frequency resonance, and the strong, single line observed is indistinguishable from the lower branch observed from sample with intermediate doping density. We suggest that the low frequency branch in our experiment is a magnetoplasmon resonance red-shifted by disorder, and the upper branch is single-particle-like screened polaron CR. (C) 1998 Elsevier Science B.V. All rights reserved.

Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices

Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage (I-V) characteristic exhibited the feature of negative differential velocity (NDV) and high electric field domain effect at different biases. Under strong magnetic fields, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (C) 1998 Elsevier Science B.V. All rights reserved.

Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures

A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well samples in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all samples near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has been calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons. (C) 1998 Elsevier Science B.V. All rights reserved.

森林流域单元水文模型的构建与应用

目前全球缺水、水污染、洪涝灾害以及水土流失仍然非常严重，尤其在我国北方地区。流域水文模型可用来进行不同需水管理的情景分析，为解决我国水问题提供科学依据。分布式水文模型是流域水文模型的发展方向，具有显著特点：1）应用前景广泛，不仅可以模拟流域水文过程，还可以协助模拟泥沙或污染物的运移过程，为水利工程设计、水土保持、环境保护等领域提供技术支持；2）能够预测流域土地利用或气候变化下的流域水文响应过程变化，为管理部门提供决策支持；3）模型所需要的参数全部具有物理意义，可通过实际测量确定，适合模拟实测系列较短或是无观测流域的水文过程；4）对于目前国际水文界的前沿问题—水文尺度转换提供了一种有效的解决途径。 然而分布式水文模型还不完善，如1)真实性问题。对一些水文过程和边界条件还不确定。2)尺度转换问题。目前很少考虑尺度对参数有效性的影响。3)检验问题。还无法判断对有些难以测量的水文状态变量的模拟正确与否。4)计算时间和数据存储的问题。有些分布式水文模型虽然具有很强的水文物理基础和完善的模型结构，但是计算时间过长和(或)数据存储过大，难以应用。上述问题的核心就是对分布式水文模型的核心—单元水文模型的研究不够，需要为进一步完善单元水文模型进行研究。 本文采用饱和入渗理论、Saint-Venant方程、Richards方程、Penman-Monteith方程等等构建了以有限差分法求解的适用于森林流域的单元水文模型，并通过实验室模拟试验和坡地径流场资料进行了验证，主要结论为： 通过不同坡度和不同雨强下的室内坡面产汇流实验模拟，表明：该模型模拟的坡面流和壤中流过程与实测过程基本一致，峰现时间、径流历时、峰值流量、出流总量模拟值与实测值的相对误差均较小，基本小于10%。模型的模拟精度较高，实用性较强，为深入研究壤中流机制和改进流域降雨-径流模型提供了理论依据。 通过坡地径流观测场实测资料的验证，表明：该模型模拟的坡面流过程精度较高，累计流量的精度更高于小时过程的精度，离差系数、效率系数、确定系数均较理想，具有应用价值，有助于改善分布式水文模型在森林流域的模拟效果。