TRANSPORT-PROPERTIES OF SI MOS INVERSION-LAYERS IN HIGH MAGNETIC-FIELDS AT LOW-TEMPERATURE


Autoria(s): ZHENG HZ; CHENG WC; ZHU YT; WANG XH; LI YX; BI KK; LI CF; JIANG PH
Data(s)

1986

Identificador

http://ir.semi.ac.cn/handle/172111/14689

http://www.irgrid.ac.cn/handle/1471x/101379

Idioma(s)

英语

Fonte

ZHENG HZ; CHENG WC; ZHU YT; WANG XH; LI YX; BI KK; LI CF; JIANG PH.TRANSPORT-PROPERTIES OF SI MOS INVERSION-LAYERS IN HIGH MAGNETIC-FIELDS AT LOW-TEMPERATURE,CHINESE PHYSICS,1986,6(2):484-488

Palavras-Chave #半导体物理
Tipo

期刊论文