High-repetition rate Q-switched Nd : YVO4 laser with a composite semiconductor absorber

A diode-pumped Nd:YVO4 laser passively Q switched by a semiconductor absorber is demonstrated. The Q-switched operation of the laser has an average output power of 135 mW with a 1.6 W incident pump power. The minimum pulse width is measured to be about 8.3 ns with a repetition rate of 2 MHz. To our knowledge, this is the first demonstration of a solid-state laser passively Q-switched by such a composite semiconductor absorber. (c) 2006 Optical Society of America.

Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

The Al composition of metalorganic chemical vapor deposition (MOCVD)-grown AlGaN alloy layers is found to be greatly influenced by the parasitic reaction between ammonia (NH3) and trimethylaluminum (TMAI). The growth process of AlN is carefully investigated by monitoring the in situ optical reflection. The abnormal dependencies of growth rate on growth temperature, reactor pressure, and flux of NH3 are observed and can be well explained by the effect of parasitic reaction. The increase of growth rate with increasing flux of TMAI is found to depend on the growth temperature and reactor pressure due to the presence of parasitic effect. A relatively low growth temperature and a reduced reactor pressure are suggested for the effective decrease of parasitic reaction during the MOCVD growth of AlN and probably lead to a more effective incorporation of Al into the AlGaN layers. (c) 2005 Elsevier B.V. All rights reserved.

Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors

The influence of gamma-radiation dose rate on the electrical properties of lead zirconate titanate capacitors was investigated. More severe degradations in dielectric constant, coercive field, remanent polarization and capacitance-voltage (C-V) curves occurred with increasing radiation dose at lower dose rates. The electrical properties exhibited distinct radiation dose rate dependence and the worst-case degradation occurred at the lowest dose rate. The radiation-induced degradation of parameters such as the coercive field drift and distortion of the C-V curve can be recovered partly through post-irradiation annealing.

Dephasing rate in an InAs/GaAs single-electron quantum dot qubit

We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are useful for guiding the solid-state implementation of quantum computing.

A partially incoherent rate theory of long-range charge transfer in deoxyribose nucleic acid

A quantum chemistry based Green's function formulation of long-range charge transfer in deoxyribose nucleic acid (DNA) double helix is proposed. The theory takes into account the effects of DNA's electronic structure and its incoherent interaction with aqueous surroundings. In the implementation, the electronic tight-binding parameters for unsolvated DNA molecules are determined at the HF/6-31G* level, while those for individual nucleobase-water couplings are at a semiempirical level by fitting with experimental redox potentials. Numerical results include that: (i) the oxidative charge initially at the donor guanine site does hop sequentially over all guanine sites; however, the revealed rates can be of a much weaker distance dependence than that described by the ordinary Ohm's law; (ii) the aqueous surroundings-induced partial incoherences in thymine/adenine bridge bases lead them to deviate substantially from the superexchange regime; (iii) the time scale of the partially incoherent hole transport through the thymine/adenine pi stack in DNA is about 5 ps. (C) 2002 American Institute of Physics.

Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations

Semiconductor microlasers with an equilateral triangle resonator (ETR) are analyzed by rate equations with the mode lifetimes calculated by the finite-difference time-domain technique and the Pade approximation. A gain spectrum based on the relation of the gain spectrum and the spontaneous emission spectrum is proposed for considering the mode selection in a wide wavelength span. For an ETR microlaser with the side length of about 5 mum, we find that single fundamental mode operation at about 1.55 mum can be obtained as the side length increases from 4.75 to 5.05 mum. The corresponding wavelength tuning range is 93 nm, and the threshold current is about 0.1 to 0.4 mA.

Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

As reported by other authors, we have also observed that the Si growth rate decreases with increasing phosphine (PH3) flow rate in gas source-Si molecular beam epitaxy using phosphorous (P) as a n-type dopant. Why small quantity PH3 can affect Si growth rate? Up to now, the quantitative characterization of PH3 flow influence on Si growth rate is little known. In this letter, the PH, influence will be analyzed in detail and a model considering strong P surface segregation and its absorption of hydrogen will be proposed to characterize the effect. (C) 2000 Elsevier Science B.V. All rights reserved.

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

The growth rate of GaN buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (MOVPE) in an atmospheric pressure, two-channel reactor was studied. The growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. A model of the GaN buffer layer growth process by MOVPE is proposed to interpret the experimental evidence. (C) 1998 Elsevier Science B.V. All rights reserved.

GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

High-quality GaN epilayers have been grown by gas source molecular beam epitaxy using ammonia as the nitrogen source. During the growth, the growth rate is up to 1.2 mu m/h and can be varied from 0.3 to 1.2 mu m. The unintentional n-type doping as low as 7x10(17) cm(-3) was obtained at room temperature. Low-temperature photoluminescence spectrum was dominated by near-edge emission without deep-level related luminescence, indicative of high-quality epilayers. (C) 1998 Elsevier Science B.V. All rights reserved.

Numerical evaluation of energy loss rate for hot carriers in quantum wells

Using the Frohlich potential associated with realistic optical phonon modes in quantum well systems, the energy loss rates of hot electrons, holes, and electron-hole pairs are calculated, with special emphasis on the effects of carrier density, hot phonon population, quantum well width, and phonon dispersion on the hot-carrier relaxation process in quasi-two-dimensional systems. (C) 1998 Academic Press Limited.

A voltage-adjustable three-phase rectifier with constant power flow

An three phase adjustable output voltage rectifier with constant power flow based on waveform gap patching principle is resented. By patching the gapes in the phase currents in parallel way as well as the ripple of the output voltage in series way, it implements the constant power flow from the three-phase line to the DC output without using any line frequency (and its harmonics) energy storage components. Principally, by treating only 22.4% power of the needed power output, this rectifier can supply constant power flow with adjustable output voltages without bring about any harmonic interferences to the power utility and achieve unite power factor.

High epitaxial growth rate of 4H-SiC using TCS as silicon precursor

High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate, structural property and surface morphology, respectively. The growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees C with TCS flow rate of 12 seem in C/Si of 0.42, which has a good surface morphology with a low Rms of 0.64 nm in 10 mu mx10 mu m area.

Simulation on Gain Recovery of Quantum Dot Semiconductor Optical Amplifiers by Rate Equation

The gain recoveries in quantum dot semiconductor optical amplifiers are numerically studied by rate equation models. Similar to the optical pump-probe experiment, the injection of double optical pulses is used to simulate the gain recovery of a weak continuous signal for the QD SOAs. The gain recoveries are fitted by a response function with multiple exponential terms. For the pulses duration of 10 ps, the gain recovery can be described by three exponential terms with the time constants, and for the pulse with the width of 150 fs, the gain recovery can be described by two exponential terms, the reason is that the short pulse does not consume lot of carriers.

Eye-safe, high-energy, single-mode all-fiber laser with widely tunable repetition rate

We present a novel high-energy, single-mode, all-fiber-based master-oscillator-power-amplifier (MOPA) laser system operating in the C-band with 3.3-ns pulses and a very widely tunable repetition rate, ranging from 30 kHz to 50 MHz. The laser with a maximum pulse energy of 25 mu J and a repetition rate of 30 kHz is obtained at, a wavelength of 1548 nm by using a double-clad, single-mode, Er:Yb co-doped fiber power amplifier.