High-repetition rate Q-switched Nd : YVO4 laser with a composite semiconductor absorber


Autoria(s): Wang YG (Wang Yong-Gang); Ma XY (Ma Xiao-Yu); Peng JY (Peng Ji-Ying); Tan HM (Tan Hui-Ming); Qian LS (Qian Long-Sheng)
Data(s)

2006

Resumo

A diode-pumped Nd:YVO4 laser passively Q switched by a semiconductor absorber is demonstrated. The Q-switched operation of the laser has an average output power of 135 mW with a 1.6 W incident pump power. The minimum pulse width is measured to be about 8.3 ns with a repetition rate of 2 MHz. To our knowledge, this is the first demonstration of a solid-state laser passively Q-switched by such a composite semiconductor absorber. (c) 2006 Optical Society of America.

Identificador

http://ir.semi.ac.cn/handle/172111/10434

http://www.irgrid.ac.cn/handle/1471x/64412

Idioma(s)

英语

Fonte

Wang YG (Wang Yong-Gang); Ma XY (Ma Xiao-Yu); Peng JY (Peng Ji-Ying); Tan HM (Tan Hui-Ming); Qian LS (Qian Long-Sheng) .High-repetition rate Q-switched Nd : YVO4 laser with a composite semiconductor absorber ,APPLIED OPTICS,2006 ,45(25):6616-6619

Palavras-Chave #光电子学 #ND-YAG LASER #LIF-F-2(-) #GAAS
Tipo

期刊论文