High-repetition rate Q-switched Nd : YVO4 laser with a composite semiconductor absorber
Data(s) |
2006
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Resumo |
A diode-pumped Nd:YVO4 laser passively Q switched by a semiconductor absorber is demonstrated. The Q-switched operation of the laser has an average output power of 135 mW with a 1.6 W incident pump power. The minimum pulse width is measured to be about 8.3 ns with a repetition rate of 2 MHz. To our knowledge, this is the first demonstration of a solid-state laser passively Q-switched by such a composite semiconductor absorber. (c) 2006 Optical Society of America. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang YG (Wang Yong-Gang); Ma XY (Ma Xiao-Yu); Peng JY (Peng Ji-Ying); Tan HM (Tan Hui-Ming); Qian LS (Qian Long-Sheng) .High-repetition rate Q-switched Nd : YVO4 laser with a composite semiconductor absorber ,APPLIED OPTICS,2006 ,45(25):6616-6619 |
Palavras-Chave | #光电子学 #ND-YAG LASER #LIF-F-2(-) #GAAS |
Tipo |
期刊论文 |