Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy
Data(s) |
2000
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Resumo |
As reported by other authors, we have also observed that the Si growth rate decreases with increasing phosphine (PH3) flow rate in gas source-Si molecular beam epitaxy using phosphorous (P) as a n-type dopant. Why small quantity PH3 can affect Si growth rate? Up to now, the quantitative characterization of PH3 flow influence on Si growth rate is little known. In this letter, the PH, influence will be analyzed in detail and a model considering strong P surface segregation and its absorption of hydrogen will be proposed to characterize the effect. (C) 2000 Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Gao F; Huang DD; Li JP; Lin YX; Kong MY; Sun DZ; Li JM; Lin LY .Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2000,220(4):461-465 |
Palavras-Chave | #半导体材料 #Si growth rate #P doping #PH3 flow rate #P segregation #GSMBE #CHEMICAL-VAPOR-DEPOSITION #SI1-XGEX #PHOSPHORUS #SI2H6 #DISILANE #SI(100) #MBE |
Tipo |
期刊论文 |