Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved.

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.

Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth

When liquid phase epitaxy regrowth at 780 degrees C for 2 h is applied to the samples after molecular beam epitaxy, a decrease of the threshold current density in strained InGaAs/GaAs quantum well lasers by a factor of 3 to 4 is obtained. We suggest that this improvement is attributed to the reduction of nonradiative centers associated with deep levels at the three regions of the active region, the graded layer and the cladding layer. Indeed, a significant reduction of deep center densities has been observed by using minority and majority carrier injection deep level transient spectroscopy measurements. (C) 1998 Elsevier Science B.V. All rights reserved.

Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism

High quality silicon nanowires (SiNWs) were grown directly from n-(111) silicon single crystal substrate by using Au film as a metallic catalyst. The diameter and length of the formed nanowires are 30-60 nm and from several micrometers to sereral tens of micrometers, respectively. The effects of Au film thickness, annealing temperature, growth time and N-2 gas flow rate on the formation of the nanowires were experimentally investigated. The results confirmed that the silicon nanowires with controlled diameter, length, shape and orientation can be obtained via reasonably choosing and optimizing various technical conditions. The formation process of the silicon nanowires is analyzed qualitatively based on solid-liquid-solid growth mechanism.

Blue Luminescent Properties of Silicon Nanowires Grown by a Solid-Liquid-Solid Method

Silicon nanowires (SiNWs) were grown directly from n-(111) single-crystal silicon (c-Si) substrate based on a solid-liquid-solid mechanism, and Au film was used as a metallic catalyst. The room temperature photoluminescence properties of SiNWs were observed by an Xe lamp with an exciting wavelength of 350 nm. The results show that the SiNWs exhibit a strongly blue luminescent band in the wavelength range 400-480 nm at an emission peak position of 420 nm. The luminescent mechanism of SiNWs indicates that the blue luminescence is attributed to the oxygen-related defects, which are in SiOx amorphous oxide shells around the crystalline core of SiNWs.

LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage (C-V) and Van der Pauw measurments, infrared absorption spectra, photoluminescence and laser Raman scattering. The results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. Room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the GaInAsSb/AlGaAsSb DH structures.

Liquid encapsulated-melt zone processing of GaAs

A liquid encapsulated melt Bone process has been developed for single crystal growth of GaAs. Single crystals of 40 mm long have been grown with this technique. To avoid unwanted nucleation events and maintain a constant crystal diameter, from top to bottom growth using a short zone with a convex zone surface was found to give the best results. An arsenic overpressure was used to in conjunction with a B2O3 encapsulant in order to suppress arsenic dissociation from the melt and maintain the stoichiometry of the crystal.

The synthesis and characterization of novel liquid crystalline, meso-tetra[4-(3,4,5-trialkoxybenzoate)phenyl]porphyrins

Five, novel, meso-tetra[4-(3,4,5-trialkoxybenzoate)phenyl]porphyrins and their metal complexes were synthesized and their molecular structures were confirmed by H-1 NMR, FTIR spectroscopy and elemental analysis. Mesomorphic studies using DSC, polarizing optical microscope and X-ray diffraction revealed that all compounds exhibited thermotropic columnar mesophases over a wide mesophase temperature range and low liquid crystalline-crystal line transition temperature. (c) 2007 Elsevier Ltd. All rights reserved

Nucleation and growth of CUSO4 center dot 5H(2)O crystals on the liquid state stearic acid Langmuir-Blodgett film

Oriented crystallization of CUSO4 center dot 5H(2)O on a Langmuir-Blodgett (LB) film of stearic acid has been studied in the temperature ranges of 73-68 degrees C and 53-20 degrees C, respectively. This is the first time that the LB film at temperature above its melting point has been served as a template to induce nucleation and growth of crystals. The experimental results demonstrated that the LB film in the liquid state has the ability of directing the nucleation and growth of crystals. Moreover, X-ray diffraction patterns of the as prepared crystals revealed that the orientation of the attached crystals on the LB film is affected by temperature greatly.

Novel spiro-fluorenes from tandem radical addition for liquid crystalline monodisperse conjugated oligomers

3'-Nonafluorobutylmethyl-4'-methyl-spiro[cyclopentyl-9,1']fluorenes were successfully synthesized via tandem radical-addition reactions between 9,9-diallylfluorenes and perfluorobutyl iodide in the presence of a radical initiator followed by reduction under mild conditions. Single crystal analysis indicates that two substituents at 3,4-positions of cyclopentane are in a maleinoid form. Accordingly, four oligo(fluorene-co-bithiophene)s with the same molecular length of similar to 10 nm (7 fluorene units and 12 thiophene units) containing one to three novel spiro-fluorene units were synthesized.

Rectangular Silver Nanorods: Controlled Preparation, Liquid-Liquid Interface Assembly, and Application in Surface-Enhanced Raman Scattering

In this paper, we for the first time report a polyol method for large-scale synthesis of rectangular silver nanorods in the presence of directing agent and seeds. This method has some clear advantages including simplicity, high quality, and ease of scaleup. Silver nanowires or silver nanorods with a submicrometer diameter could also be facilely prepared when the reaction parameters are slightly changed. Furthermore, a liquid-liquid assembly strategy has been employed to construct uniform rectangular silver nanorod arrays on a solid substrate which could be used as surface-enhanced Raman scattering (SERS) substrates with high SERS activity, stability, and reproducibility. It is found that the SERS spectra obtained from the probe molecules with the different concentrations show different SERS intensifies. As the concentration of 4-aminothiophenol (4-ATP) or rhodamine 6G (R6G) increases, the SERS intensities progressively increase. The enhancement factor for 4-ATP and R6G should be as large as 5.06 x 10(4) or much larger than the value of 5.06 x 10(8), respectively.

Ordering-induced micro-bands in thin films of a main-chain liquid crystalline chloro-poly(aryl ether ketone)

Micro-banded textures developed from thin films of a main-chain thermotropic liquid crystalline chloro-poly(aryl ether ketone) in the melt were investigated using transmission electron microscopy (TEM). selective area electron diffraction, and atomic force microscopy techniques. The micro-banded textures were formed in the copolymer thin films after annealing at temperatures between 320 and 330degreesC, where a highly ordered smectic crystalline phase is formed without mechanical shearing. The micro-banded textures displayed a sinusoidal-like periodicity with a spacing of 150 nm and an amplitude of 2 rim. The long axis of the banded texture was parallel to the b-axis of an orthorhombic unit cell. In the convex regions, the molecular chains exhibited a homeotropic alignment, i.e. the chain direction was parallel to the film normal. In the concave re-ions, the molecular chains possessed a tilted alignment. In addition to the effects of annealing temperatures and times, the thickness of the film played a vital role in the formation of the banded texture. A possible formation mechanism of this banded texture vas also suggested and discussed. It was suggested that the micro-bands were formed during cooling.

Electric-field-induced molecular alignment of side-chain liquid-crystalline polyacetylenes containing biphenyl mesogens

Electric-field-induced molecular alignments of side-chain liquid-crystalline polyacetylenes [-{HC=C[(CH2)(m)OCO-biph-OC7H15]}-, where biph is 4,4'-biphenylyl and m is 3 (PA3EO7) or 9 (PA9EO7)] were studied with X-ray diffraction and polarized optical microscopy. An orientation as high as 0.84 was obtained for PA9EO7. Furthermore, the molecular orientation of]PA9EO7 was achieved within a temperature range between the isotropic-to-smectic A transition temperature and 115 degreesC, and this suggested that the orientational packing was affected by the thermal fluctuation of the isotropic liquid and the mobility of the mesogenic moieties. The maximum achievable orientation for PA9EO7 was much greater than that for PA3EO7. This was the first time that the electric-field-induced molecular orientation of a side-chain liquid-crystalline polymer with a stiff backbone was studied.

Shear induced molecular alignments of a side-chain liquid crystalline polyacetylene containing biphenyl mesogens

Mesomorphic properties of a side chain liquid crystalline polyacetylene, poly(11-{[(4'-heptyloxy-4-biphenylyl)carbonyl]oxy}-1-undecyne) (PA9EO7), are investigated using polarized optical microscope, X-ray diffraction, and transmission electron microscope. Polymer PA9EO7 forms enantiotropic smectic A and smectic B phases. It also exhibits an additional high order smectic phase, a sandwich structure consisting of different molecular packing of biphenyl mesogenic moieties from that of alkyl spacers and terminals, when it is prepared from its toluene solution. Shearing the polymer film at its smectic A phase generates banded texture with the alignment of the backbones parallel to the direction of shear force. While at its high order smectic phase, the mesogen pendants of the polymer are arranged parallel to the direction of shear. The different mesomorphic behaviors arise from different molecular alignments influenced by the fluidity.

High order liquid crystalline structure of poly(11-{[(4 '-heptyloxy-4-biphenylyl)carbonyl]oxy}-1-undecyne)

Liquid crystalline properties of a mesomorphic polyacetylene {-[HC=C(CH2 )(9)OOC-Biph-OC7H15](n)- (PA9EO7), Biph=4-4'-biphenylyl} are investigated by X-ray diffraction, polarizing optical microscope, and transmission electron microscope. Polyacetylene PA9EO7 from solution adopts a sandwich structure, which is a high order smectic phase. The biphenylyl pendants pack in a hexagonal fashion and the distance between two appendages is 4.51 Angstrom. The heptyloxy tails on one polymer backbone overlap with those on the neighboring chain. The nonyl spacer and the heptyloxy tail exhibit a hexagonal packing arrangement with intermolecular distance of 3.24 Angstrom.