Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy


Autoria(s): Chen CL; Chen NF; Liu LF; Li YL; Wu JL
Data(s)

2004

Resumo

The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/8220

http://www.irgrid.ac.cn/handle/1471x/63704

Idioma(s)

英语

Fonte

Chen, CL; Chen, NF; Liu, LF; Li, YL; Wu, JL .Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy ,JOURNAL OF CRYSTAL GROWTH,JAN 2 2004,260 (1-2):50-53

Palavras-Chave #半导体材料 #X-ray diffraction
Tipo

期刊论文