InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy
| Data(s) |
2007
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| Resumo |
The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Gao, FB (Gao, Fubao); Chen, NF (Chen, NuoFu); Liu, L (Liu, Lei); Zhang, XW (Zhang, X. W.); Wu, JL (Wu, Jinliang); Yin, ZG (Yin, Zhigang) .InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy ,JOURNAL OF CRYSTAL GROWTH,JUN 15 2007,304 (2):472-475 |
| Palavras-Chave | #半导体材料 #crystal structure |
| Tipo |
期刊论文 |
