Residual strength of GRP laminates with multiple randomly distributed fragment impacts

The residual tensile strength of glass fibre reinforced composites with randomly distributed holes and fragment impact damages have been investigated. Experiments have been performed on large scale panels and small scale specimens. A finite element model has been developed to predict the strength of multi-axial panels with randomly distributed holes. Further, an effective analytical model has been developed using percolation theory. The model gives an estimation of the residual strength as function of removed surface area caused by the holes. It is found that if 8% of the area is removed, the residual strength is approximately 50% of the un-damaged strength. © 2014 Published by Elsevier Ltd.

Determinations of residual furazolidone and its metabolite, 3-amino-2-oxazolidinone (AOZ), in fish feeds by HPLC-UV and LC-MS/MS, respectively

The antibacterial drug furazolidone belonging to the group of nitrofuran antibacterial agents has been widely used as an antibacterial and antiprotozoal feed additive for poultry, cattle, and farmed fish in China. During application a large proportion of the administered drug may reach the environment directly or via feces. Although the use of furazolidone is prohibited in numerous countries, there are indications of its illegal use. It is known that furazolidone can be rapidly metabolized to 3-amino-2-oxazolidinone (AOZ) in the body of the target organism. In this study, a total of 21 fish feed samples, including 17 commercial fish feeds from local markets in China (representing 15 different formulations) and 4 fish feeds obtained from Germany and Turkey, respectively, are analyzed to determine whether the drug is still illegally used or commercially available feeds are contaminated by this drug. High-performance liquid chromatography (HPLC) and liquid chromatography-electrospray ionization tandem mass spectrometry (LC-ESI-MS/MS) methods have been implemented to determine furazolidone and its metabolite AOZ in fish feeds containing animal protein, respectively. An efficient and convenient cleanup method for the determination of furazolidone in fish feeds is developed, and a simple cleanup method for the determination of AOZ is used. Method recoveries for samples used were determined as 87.7-98.3% for furazolidone at two spike levels of 2.0 and 5.0 ng g(-1) and as 95.6-102.8% for AOZ at spike levels of 0.4 and 0.8 ng g(-1). Limits of detections were 0.4 ng g(-1) for furazolidone and 0.05 ng g(-1) for AOZ. The established methods are therefore suitable for the determination of furazolidone and its metabolite AOZ in fish feeds at trace contamination levels. Using the established methods, all fish feed samples have been proved to be furazolidone negative; however, AOZ is tested in 16 of 17 fish feeds obtained from local markets in the Hubei province of China, with a positive rate as high as 94.1%.

Bayesian inference and learning in Gaussian process state-space models with Particle MCMC

State-space models are successfully used in many areas of science, engineering and economics to model time series and dynamical systems. We present a fully Bayesian approach to inference and learning (i.e. state estimation and system identification) in nonlinear nonparametric state-space models. We place a Gaussian process prior over the state transition dynamics, resulting in a flexible model able to capture complex dynamical phenomena. To enable efficient inference, we marginalize over the transition dynamics function and, instead, infer directly the joint smoothing distribution using specially tailored Particle Markov Chain Monte Carlo samplers. Once a sample from the smoothing distribution is computed, the state transition predictive distribution can be formulated analytically. Our approach preserves the full nonparametric expressivity of the model and can make use of sparse Gaussian processes to greatly reduce computational complexity.

Single camera pose estimation using Bayesian filtering and Kinect motion priors

Traditional approaches to upper body pose estimation using monocular vision rely on complex body models and a large variety of geometric constraints. We argue that this is not ideal and somewhat inelegant as it results in large processing burdens, and instead attempt to incorporate these constraints through priors obtained directly from training data. A prior distribution covering the probability of a human pose occurring is used to incorporate likely human poses. This distribution is obtained offline, by fitting a Gaussian mixture model to a large dataset of recorded human body poses, tracked using a Kinect sensor. We combine this prior information with a random walk transition model to obtain an upper body model, suitable for use within a recursive Bayesian filtering framework. Our model can be viewed as a mixture of discrete Ornstein-Uhlenbeck processes, in that states behave as random walks, but drift towards a set of typically observed poses. This model is combined with measurements of the human head and hand positions, using recursive Bayesian estimation to incorporate temporal information. Measurements are obtained using face detection and a simple skin colour hand detector, trained using the detected face. The suggested model is designed with analytical tractability in mind and we show that the pose tracking can be Rao-Blackwellised using the mixture Kalman filter, allowing for computational efficiency while still incorporating bio-mechanical properties of the upper body. In addition, the use of the proposed upper body model allows reliable three-dimensional pose estimates to be obtained indirectly for a number of joints that are often difficult to detect using traditional object recognition strategies. Comparisons with Kinect sensor results and the state of the art in 2D pose estimation highlight the efficacy of the proposed approach.

Residual plastids of bleached mutants of Euglena gracilis and their effects on the expression of nucleus-encoded genes

Bleached mutants of Euglena gracilis were obtained by treatment with ofloxacin (Ofl) and streptomycin (Sm) respectively. As shown by electron microscopy, the residual plastids contain prothylakoids in an Ofl mutant, and the highly developed and tightly stacked membranous structure found in cells of two Sm, mutants. Nine genes of the plastid genome were examined with PCR, showing that ribosomal protein genes and most other plastid genes were lost in all but one Sm mutant. Using differential display and RT-PCR, it was shown that chloroplast degeneration could cause changes in transcription of certain nucleus-encoded genes during heterotrophic growth in darkness.

PCDD/F-s, PCBs, HCHs and HCB in sediments and soils of Ya-Er lake area in China: Results on residual levels and correlation to the organic carbon and particle size

Sediments and soils collected from the Ya-Er Lake area in China were analysed for the polychlorinated dibenzo-p-dioxins and dibenzofurans (PCDD/Fs), polychlorinated biphenyl (PCBs), hexachlorocyclohexane (HCHs) and hexachlorobenzene (HCB). The results indicated the main pollution problems in the Ya-Er Lake area, which was heavily polluted by HCHs and chlorobenzenes, now is dominantly polluted by PCDD/Fs, PCBs and HCB. The occurrence of PCDD/Fs and PCBs with relatively high levels of HpCDDs, OCDD and low chlorinated-substituted PCBs, is attributed to the discharge of waste water and biodegradation. The vertical distributions of HCH-residues are related with the content of organic carbon and particle size. Copyright (C) 1996 Elsevier Science Ltd

MOBILITY AND TRANSFER OF RESIDUAL HEXACHLOROCYCLOHEXANE (HCH) IN AQUATIC ENVIRONMENT

An investigation was carried out to study the mobility and transfer of HCH-residues in Yanjia lake, Hubei, China, from 1990-1993. By sampling at different locations, the horizontal distribution of HCH-residues was determined; by sampling at different depths in the same location, the vertical mobility of HCH-residues and its penetration were measured. The vertical profiles of HCH-residues in sediment showed a gradient distribution, which was reduced with the increase in depth. This was very similar in shape to the organic carbon and nitrogen content profiles. The penetration of HCH-residues was measured as 60cm approximately. Meanwhile, water, sediment (0-12cm), benthos and benthic fish collected from the lake were analyzed to determine the transfer of HCH-residues along aquatic food chain. The BCF values of HCH-residues indicated that the bioaccumulation of HCH-residues in freshwater food chain still exsisted in spite of the banning of HCH since 1983. The maxium BCF value of HCH-residues in the liver samples of 5-year-old common carp was up to 61966 (calculated by beta-HCH).

Gallium antisite defect and residual acceptors in undoped GaSb

Undoped Ga-Sb samples were investigated by positron lifetime spectroscopy (PAS) and the coincident Doppler broadening (CDB) technique. PAS measurement indicated that there were monovacancy-type defects in undoped Ga-Sb samples, which were identified to be predominantly Ca vacancy (V-Ga) related defects by combining the CDB measurements. After annealing of these samples at 520 C, positron shallow trapping have been observed and should be due to Ga-Sb defects. Undoped Ga-Sb is intrinsically p-type having a residual carrier density of 10(16)-10(17) cm(-3). And the Ga-Sb antisite defects are stable in the (0), (1-) and (2-) charge states and act as a double acceptor. Thus, we infer that Ga-Sb antisite defects are the acceptor contributing to the p-type conduction for undoped samples. (C) 2004 Elsevier B.V All rights reserved.

Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation

The reduction of residual strain in cubic GaN growth by inserting a thermoannealing process is investigated. It is found that the epilayer with smaller tensile strain is subject to a wider optimal "growth window." Based on this process, we obtain the high-quality GaN film of pure cubic phase with the thickness of 4 mum by metalorganic chemical vapor deposition. The photoluminescence spectrum at room temperature shows the thick GaN layer has a near-band emission peak with a full width at half maximum of 42 meV which confirms its high crystal quality, further supported by the x-ray (002) diffraction measurement. A simplified model is demonstrated to interpret this strain effect on the growth process. (C) 2003 American Institute of Physics.

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (V-Ga) related defect. Isochronal annealing studies showed at 300 degreesC annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (similar to2x10(17) cm(-3)) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the V-Ga defect, at least for cases with annealing temperatures above 300 degreesC, V-Ga is not the acceptor responsible for the p-type conduction. (C) 2002 American Institute of Physics.

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.

Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN

In our recent report, [Xu , Appl. Phys. Lett. 76, 152 (2000)], profile distributions of five elements in the GaN/sapphire system have been obtained using secondary ion-mass spectroscopy. The results suggested that a thin degenerate n(+) layer at the interface is the main source of the n-type conductivity for the whole film. The further studies in this article show that this n(+) conductivity is not only from the contribution of nitride-site oxygen (O-N), but also from the gallium-site silicon (Si-Ga) donors, with activation energies 2 meV (for O-N) and 42 meV (for Si-Ga), respectively. On the other hand, Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-donor two-layer conduction, including Hall carrier concentration and mobility, has been modeled by separating the GaN film into a thin interface layer and a main bulk layer of the GaN film. The bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. Si-Ga and O-N should also be shallow donors and V-Ga-O or V-Ga-Al should be compensation sites in the bulk layer. The best fits for the Hall mobility and the Hall concentration in the bulk layer were obtained by taking the acceptor concentration N-A=1.8x10(17) cm(-3), the second donor concentration N-D2=1.0x10(18) cm(-3), and the compensation ratio C=N-A/N-D1=0.6, which is consistent with Rode's theory. Saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. (C) 2001 American Institute of Physics.

Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)

Raman scattering measurement has been used to study the residual strains in the thin 3C-SiC/Si(001) epilayers with a variation of film thickness from 0.1 to 1.2 mu m. which were prepared by chemical vapor deposition (CVD)growth. Two methods have been exploited to figure our the residual strains and the exact LO bands. The final analyzing results show that residual strains exist in the 3C-SiC epilayers. The average stress is 1.3010 GPa, and the relative change of the lattice constant is 1.36 parts per thousand. Our measurements also show that 3C-SiC phonons are detectable even for the samples with film thickness in the range of 0.1 to 0.2 mu m. (C) 2000 Published by Elsevier Science S.A. All rights reserved.