Gallium antisite defect and residual acceptors in undoped GaSb
Data(s) |
2004
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Resumo |
Undoped Ga-Sb samples were investigated by positron lifetime spectroscopy (PAS) and the coincident Doppler broadening (CDB) technique. PAS measurement indicated that there were monovacancy-type defects in undoped Ga-Sb samples, which were identified to be predominantly Ca vacancy (V-Ga) related defects by combining the CDB measurements. After annealing of these samples at 520 C, positron shallow trapping have been observed and should be due to Ga-Sb defects. Undoped Ga-Sb is intrinsically p-type having a residual carrier density of 10(16)-10(17) cm(-3). And the Ga-Sb antisite defects are stable in the (0), (1-) and (2-) charge states and act as a double acceptor. Thus, we infer that Ga-Sb antisite defects are the acceptor contributing to the p-type conduction for undoped samples. (C) 2004 Elsevier B.V All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Hu, WG; Wang, Z; Su, BF; Dai, YQ; Wang, SJ; Zhao, YW .Gallium antisite defect and residual acceptors in undoped GaSb ,PHYSICS LETTERS A,NOV 15 2004,332 (3-4):286-290 |
Palavras-Chave | #半导体材料 #GaSb |
Tipo |
期刊论文 |