Observação do transporte de sedimentos em suspensão ao longo do Canal Norte do rio Amazonas durante condições de baixa descarga (outubro 2008)

The Amazon river, located in northernBrazil, discharges between 80,000 and 250,000 m3s-1 of water onto the adjacent shelf, creating a plume of brackish water that extends hundreds of kilometers away from the river mouth. This river also carries a large amount of fine sediments to the ocean where fluid mud has been found in the topset and upper foreset layers of the subaqueous delta formed on the mid-shelf. One of the main goals of this dissertation is to describe how turbulence and suspended sediment concentration vary along the Northern Channel of the Amazon river. Water column measurements were carried out in October 2008 at six anchor stations (P1, P3, P5, P6, P8 e P9) located seaward of the river mouth; P1 and P9 were 125 km apart. Each station was occupied during 13 hours during which current speed and direction were continuously sampled with a 600 kHz Teledyne-RDI ADCP; hourly profiles of temperature, salinity, turbidity and depth were also obtained. Water samples were collected for determination of Suspended Particulate Matter (SPM) concentration and calibration of the turbidity sensor. Current speed reached values above 1.5 m s1 in the along-channel direction (NE-SW); a remarkable ebb-flood asymmetry was observed and flows were strongly ebb-dominated. Throughout the water column, SPM concentration at stations P1 and P3 varied between 100 and 300 mg L1 in association with the presence of freshwater. In contrast, a strong salinity gradient was observed between stations P6 and P9, coinciding with the occurrence of concentrations of SPM above 10 g L-1 (fluid mud). At stations P3, P5 and P6, interface between freshwater from the Amazon river and salt water from the continental shelf, shear stresses wereestimated through four diferents methods: Reynolds, Turbulent Kinetic Energy (TKE), modified TKE and Quadratic Law; in the nearbed region (3 mab) the computed values varied between 0 and 3 Pa. At the three stations (P3, P5 and P6) the lowest and the highest shear stress values were obtained through, respectively, the Reynolds and the TKE methods. Over the whole water column turbulence intensity was estimated through the standard deviation of the turbulent component of the along-channel current velocity (root-mean square of u); from these values, it was estimated the turbulent dissipation of energy (G), whose values at 3 mab varied between zero and 20 s1.

Isotope shift studies in the rare earths and lead

Isotope shifts of K_α1 x-ray transitions were measured for the Neodymium isotopes Nd 142, 143, 144, 145, 146, 148 and 150, the Samarium isotopes Sm 147, 148, 149, 150, 152 and 154, the Gadolinium isotopes Gd 154, 155, 156, 157, 158 and 160, the Dysprosium isotopes Dy 162 and 164, the Erbium isotopes Er 166, 168 and 170, the Hafnium isotopes Hf 178 and 180 and the Lead isotopes Pb 204, 206, 207 and 208. A curved crystal Cauchois spectrometer was used. The analysis of the measurement furnished the variation of the mean square charge radius of the nucleus, δ˂r²˃, for 23 isotope pairs. The experimental results were compared with theoretical values from nuclear models. Combining the x-ray shifts and the optical shifts in Nd and Sm yielded the optical mass shifts. An anomaly was observed in the odd-even shifts when the optical and the x-ray shifts were plotted against each other.

溶胶-凝胶多孔二氧化硅减反膜稳定性研究

多孔SiO2膜层经热处理后，具有很高的激光破坏阈值，但是结构中有许多Si-OH亲水基团，导致光学透过率受环境相对湿度的影响很大。实验目的是改善膜层内部结构，使膜层结构中的亲水基团转变为疏水基团。提高膜层的疏水性，增强膜层的透过率稳定性。系统地研究了膜层透过率随时间变化的规律，在氨气和六甲基二硅氮烷(HMDS)混合气氛下热处理膜层，处理后生成Si-O-Si(CH2)3非极性疏水基团，使膜层的疏水性大大提高，因而膜层的透过率稳定性有大幅度提高。稳定性的提高延长了膜层的寿命。处理后膜层的表面粗糙度良好，均方根表

磷酸盐激光玻璃聚（CH3）2Si（OC2H5）2防潮膜

以（CH3）2Si（OC2H5）2为前驱体，采用溶胶-凝胶与有机合成相结合的方法，制得稳定性良好的涂膜液。采用旋转涂膜法在掺钕磷酸盐激光玻璃棒端面涂制防潮膜，膜层固化后透过率达96．5％，获得的膜层表面粗糙度优良，均方根表面粗糙度（RMS）为1．659nm，平均粗糙度（RA）平均为1．321nm；在激光波长1053nm，脉冲宽度1 ns条件下膜层的激光破坏闽值可达10～14 J／cm^2。经过“神光Ⅱ”高功率激光器物理实验运行，膜层使用期为五年，并且已经在我国“神光Ⅲ”原型装置上试用。

磷酸盐激光玻璃的化学机械抛光

从磷酸盐激光玻璃的成分和结构出发,分析了其化学机械抛光(CMP)机制。通过实验验证了磷酸盐激光玻璃对抛光液pH值具有较强的选择性,在微酸性和中性条件下磷酸盐激光玻璃具有较高的抛光效率,在抛光液中添加pH值调节添加剂会保持抛光环境的酸碱性从而影响抛光效率和抛光质量。通过对pH值和抛光剂浓度的控制获得了均方根(RMS)优于0.6 nm的磷酸盐激光玻璃的超光滑表面。

高稳定激光二极管抽运Nd∶YLF再生放大器

设计并实现了一种放大纳秒激光脉冲的高稳定的激光二极管(LD)抽运Nd∶YLF再生放大器。为了获得高稳定的输出,再生放大器工作在饱和状态。此时,再生放大器输出稳定性最好,而且注入激光脉冲能量波动引起的输出激光脉冲波动被抑制。由于增益饱和效应,再生放大器输出脉冲出现时域波形失真,附加后缀脉冲能够减弱时域波形失真。放大器工作波长1053nm,工作频率1Hz。输入240pJ的3ns方波激光脉冲,输出激光脉冲能量4.2mJ,总增益大于107,不稳定度小于1%(均方根),方波扭曲1.33。为3ns方波激光脉冲引入其本身幅度0.75倍的后缀脉冲,输出激光脉冲方波扭曲由1.33降至1.17。

Optical parameters and absorption of copper (II)-azo complexes thin films as optical recording media

Smooth thin films of three kinds of azo dyes of 2-(5'-tert-butyl-3'-azoxylisoxazole)-1, 3-diketones and their copper (II)-azo complexes were prepared by the spin-coating method. Absorption spectra of the thin films on a glass substrate in the 300-600 nm wavelength region were measured. Optical constants (complex refractive index N=n+ik) and thickness of the thin films prepared on single-crystal silicon substrate in the 300-600 nm wavelength region were investigated on rotating analyzer-polarizer type of scanning ellipsometer, and dielectric constants epsilon(epsilon=epsilon(1)+i epsilon(2)), absorption coefficients alpha as well as reflectance R of thin films were then calculated. In addition, one of the copper (II)-azo complex thin film prepared on glass substrate with an Ag reflective layer was also studied by atomic force microscopy (AFM) and static optical recording. AFM study shows that the copper (II)-azo complex thin film is very smooth and has a root mean square surface roughness of 1.89 nm. Static optical recording shows that the recording marks on the copper (II)-azo complex thin film are very clear and circular, and the size of the minimal recording marks can reach 200 nm. (c) 2004 Elsevier B.V. All rights reserved.

Optical properties of nickel(II)-azo complexes thin films for potential application as high-density recordable optical recording media

Smooth thin films of three kinds of nickel(II)-azo complexes were prepared by the spin-coating method. Absorption spectra of the thin films on K9 glass substrate in the 300-600 nn wavelength region were measured. Optical constants (complex refractive index N = n + ik) and thickness of the thin films prepared on single-crystal silicon substrate in the 300-600 nm wavelength region were investigated on rotating analyzer-polarizer type of scanning ellipsometer, and dielectric constants epsilon (epsilon = epsilon(1) + i epsilon(2)), absorption coefficients a as well as reflectance R of thin films were then calculated at 405 nm. In addition, in order to examine the possible use of nickel(II)-azo complex thin film as an optical recording medium, one of the nickel(II)-azo complex thin film prepared on K9 glass substrate with an Ag reflective layer was also studied by atomic force microscopy and static optical recording. The results show that the nickel(II)-azo complex thin film is smooth and has a root mean square surface roughness of 2.25 nm, and the recording marks on the nickel(II)-azo complex thin film are very clear and circular, and their size can reach 200 nn or less. (c) 2006 Elsevier Ltd. All rights reserved.

Epitaxial growth of ZnO thin films on LiGaO2 substrates by pulsed-laser deposition

Lattice-matched (Delta(a/a) = 1.8-3.4%) (001) LiGaO2 substrates have been employed for the first time to grow ZnO thin films by pulsed-laser deposition at 350-650 degrees C with oxygen partial pressure of 20Pa. XRD shows that a highly c-axis-oriented ZnO film can be deposited on (001) LiGaO2 substrate at 500 degrees C. AFM images reveal the surfaces of as-deposited ZnO films are smooth and root-mean-square values are 6.662, 5.765 and 6.834 nm at 350, 500 and 650 degrees C, respectively. PL spectra indicate only near-band-edge UV emission appears in the curve of ZnO film deposited at 500 degrees C. The deep-level emission of ZnO film deposited at 650 degrees C probably results from Li diffusion into the film. All the results illustrate substrate temperature plays a pretty important role in obtaining ZnO film with a high quality on LiGaO2 substrate by pulsed-laser deposition. (c) 2006 Elsevier B.V. All rights reserved.

Study on the hydrolytic property and thermal stability of LiAlO2 substrate

The hydrolytic property and thermal stability of LiAlO2 (LAO), important factors for its application, were examined by AFM and X-ray rocking curve. We found that H2O may be deleterious for LAO surface polishing when the root mean square (RMS) value is less than 1 nm. However, when the RMS value is more than 1 nm it may be useful for LAO polishing. (100)-plane LAO substrates are annealed in the range of 850-900 degrees C in flux N-2, Slick AlN layer probably is produced on the substrate surface. M-plane GaN layer has grown on the substrate by metal-organic chemical vapor deposition (MOCVD) method. Theses results show that LiAlO2 crystal is a promising substrate of fabricating high-efficiency LEDs by MOCVD. (c) 2006 Elsevier B.V. All rights reserved.

高质量LiGaO2晶体的提拉法生长及表征

采用提拉法成功地生长了高质量的LiGaO2单晶体,生长过程中没有观察到挥发现象。通过四晶X射线衍射、化学腐蚀、光学显微、透过光谱以及原子力显微镜对晶体的质量进行了表征。结果表明：晶体中无包裹物及气泡,具有很高的质量,（001）面晶片的摇摆曲线半高宽仅为16.2arcsec,正交的（001）、（100）及（010）三个晶面具有不同的腐蚀形貌,其位错密度均低于10^4/cm^2;LiGaO2晶体的吸收边约为220nm;化学机械抛光后的晶片表面非常光滑,其均方根粗糙度仅为0.1nm（5×5μm^2）。

测量薄膜微粗糙度的总积分散射仪

介绍了一种检测光学薄膜表面总积分散射（TIS）分布的总积分散射仪。对仪器的基本结构、理论基础、测量原理以及系统性能等进行了阐述，提出了抑制系统噪音和提高测量精度的有效措施。利用该仪器对K9基底上的银（Ag）膜和氧化锆（ZrO2）薄膜进行了测量，并根据标量散射理论得到了表面均方根（RMS）粗糙度。利用光学轮廓仪和原子力显微镜（AFM）分别测量了上述Ag膜和ZrO2薄膜的表面均方根粗糙度，并与总积分散射仪所得的粗糙度进行了比较。结果表明，根据测量的薄膜表面总积分散射计算得到的表面均方根粗糙度与光学轮廓仪及原子

光学表面的标量散射理论

简要论述了标量散射理论的研究进展做,着重介绍了Beckman的一维标量散射理论和几种典型的多层膜散射模型-非相关表面粗糙度模型、附加表面粗糙度模型和非相关体内不均匀模型,比较了这些模型在中心波长为632.8nm的11层高反膜的散射特性.结果表明,非相关体内的不均匀性引起反射能带边缘散射,反射能带内的散射主要由附加表面粗糙度引起.理想粗糙度对膜系反射带内的散射影响很小,对反射带边缘几乎无影响.预测了标量散射理论的应用领域及前景.

沉积温度对热舟蒸发MgF2薄膜性能的影响

采用热舟蒸发方法沉积了氟化镁（MgF2）材料的单层膜，沉积温度从200℃上升到350℃，间隔为50℃。测量了样品的透射率和反射率光谱曲线，进行了表面粗糙度的标定，并在此基础上进行了光学损耗及散射损耗的计算。同时对355nm波长处的激光诱导损伤阈值进行了测量。结果表明：随着沉积温度的升高，光学损耗增加;在短波长范围散射损耗在光学损耗中所占比例很小，光学损耗的增加主要由吸收损耗引起；在355nm波长处的损伤阈值变化与吸收损耗的变化趋势相关，损伤机制主要是吸收起主导作用。样品的微缺陷密度也是影响损伤阈值的一个重要因素，损伤阈值随缺陷密度的增加而降低。

Annealing effects on the optical and structural properties of Al2O3/SiO2 films as UV antireflection coatings on 4H-SiC substrates

Al2O3/SiO2 films have been prepared by electron-beam evaporation as ultraviolet (UV) antireflection coatings on 4H-SiC substrates and annealed at different temperatures. The films were characterized by reflection spectra, ellipsometer system, atomic force microscopy (AFM), X-ray diffraction (XRD) and Xray photoelectron spectroscopy (XPS), respectively. As the annealing temperature increased, the minimum reflectance of the films moved to the shorter wavelength for the variation of refractive indices and the reduction of film thicknesses. The surface grains appeared to get larger in size and the root mean square (RMS) roughness of the annealed films increased with the annealing temperature but was less than that of the as-deposited. The Al2O3/SiO2 films maintained amorphous in microstructure with the increase of the temperature. Meanwhile, the transition and diffusion in film component were found in XPS measurement. These results provided the important references for Al2O3/SiO2 films annealed at reasonable temperatures and prepared as fine anti-reflection coatings on 4H-SiC-based UV optoelectronic devices. (c) 2008 Elsevier B.V. All rights reserved.