The design of cascaded resistors in a new analog switch two-step ADC architecture

In this paper we introduce a new Half-flash analog switch ADC architecture. And we discuss two methods to design the values of the cascaded resistors which generate the reference voltages. Derailed analysis about the effect of analog switches and comparators on reference voltages, and the methods to set the resistor values and correspond;ng voltage errors are given.

An analysis of the performance of a new high-speed single-way analog switch

This paper introduces a new highspeed single-way analog switch which has both highspeed high-resolution mono-direction analog transmission gate function and high-speed digital logic gate function with normal bipolar technology. The analysis of static and transient switching performances as an analog transmission gate is emphasized in the paper. In order to reduce the plug-in effect on high-speed high-resolution systems, an optimum design scheme is also given. This scheme is to achieve accelerated dynamic response with very low bias power dissipation. The analysis of PSPICE simulation as well as the circuit test results confirms the feasibility of the scheme. Now, the circuit has been applied effectively to the designs of novel highspeed A/D and D/A converters.

A one-way MOS analog switch

In this paper, a one-way NMOS analog switch featuring a low plug-in consumption is presented. The performances of analog switch, especially the performances of source follower are simulated under different conditions with PSPICE. Simulation results and factors affecting the deviation between input and output are analyzed, some advice on how to reduce the deviation between input and output is given. Ar the end of the paper, voltage relationship between input and output of the analog switch is obtained. Function of first degree, Vout = kVin + V0, is used to approximate the voltage relationship. The simulation results anti the value achieved from the approximation equation are given as well.

Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing

Self-organized InAs quantum; dots sheets are grown on GaAs(100) substrate and tapped by 80nm GaAs layer with molecular beam epitaxy. Samples were annealed and characterized with Raman spectra, transmission electron microscopy (TEM) and photolumincscence (PL). The Raman spectra indicates arsenic clusters in the GaAs capping layer. The TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 dislocations. In addition, the structural changes also lead to the changes of the PL spectra from me InAs islands. Their correlation was discussed, Our results suggest:est that annealing may be used to intentionally modify me properties of self-organized InAs islands on GaAs.

Iron related emission spectra in InP

This paper presents a detailed PL study of Fe2+ related four zero-phonon(ZP) lines and their related phonon sidebands. Four zero-phonon transitions at approximate to 2800 cm(-1) along with the accompanying phonon sidebands extending down to 2400 cm(-1). There are ta two prominent regions in the phonon sidebands. One is ascribed to coupling to acoustic-type phonons (2700 cm(-1) region), the other is due to coupling to optic-type phonons (2500 cm(-1) region). Beside broad coupling with lattice modes, there are several groups of lines. They are ascribed to resonant modes, impurities induced gap modes and local modes.

Room-temperature continuous-wave lasing from InAs GaAs quantum dot laser grown by molecular beam epitaxy

Quantum dot lasers are predicted to have proved lasing characteristics compared to quantum well and quantum wire lasers. We report on quantum dot lasers with active media of vertically stacked InAs quantum dots layers grown by molecular beam epitaxy. The laser diodes were fabricated and the threshold current density of 220 A/cm(2) was achieved at room temperature with lasing wavelength of 951 nm. The characteristic temperature To was measured to be 333K and 157K for the temperature range of 40-180K and 180-300K, respectively.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Design of high brightness cubic-GaN LEDs grown on GaAs substrate

The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

Linear and nonlinear optical properties of the PbSe quantum dots doped germane-silica glass optical fiber

We report development of a new fiber doped with PbSe quantum dots for nonlinear optical applications. PbSe quantum dots related absorption peaks were obtained at 1021, 1093 and 1351 nm. The resonant optical nonlinearity and attenuation at 1500 nm were measured to be 9.4 × 10−16 m2/W and 0.01 dB/m, respectively. The emission around 1540 nm was observed upon near resonant pumping at 1064 nm.

Applications of Heavy Ion Irradiation in Photonic Crystal Research

Photonic crystals (PC) have received extensive attention for the photonic band gap (PBG). The polystyrene (PS) particles bottom-up approach is a productive method for photonic crystal manufacture, this kind of photonic crystals having an unique PBG that depends on the particle's shape, sizes and defects. Heavy ion irradiation is a very useful method to induce defects in PC and change the shapes of the particles to tune the PBG. MeV heavy ion irradiation leads to an anisotropic deformation of the particles from spherical to ellipsoidal, the aspect ratio of which can be precisely controlled by using the ion energy and flux. Sub-micrometer PS particles were deposited on a Cu substrate and were irradiated at 230 K by using heavy ion energy and fluence in the range from 2 to 10 MeV and 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2); respectively.

小鲵属分子系统发育研究

小鲵属为亚洲特有的有尾两栖类，是小鲵科之模式属。现记载小鲵属动物有29种，占全科物种数一半以上（Frost, 2007），为小鲵科第一大属。该属分布跨越古北界和东洋界，分布于中国、朝鲜、韩国、日本等地区，其系统学研究一直以来颇为中外学者所关注。澄清该属的物种分类问题，阐明其种间的系统发育关系对整个小鲵科的系统演化与分布格局关系的研究具有关键性意义。 本论文以中国及周边地区的小鲵属物种为主要对象，主要利用分子生物学实验与生物信息学途径相结合的手段，运用支序系统学与分子进化生物学理论及分析方法，展开系统发育的研究。在此基础上诠释现存的分类问题，并探讨该属系统发育关系。 研究材料上，本研究采用野外采集与网络下载数据相结合的方法，获取了较为全面的小鲵属物种DNA序列资料。技术手段上，选取了线粒体DNA的Cytb、12S、16S、NADH 2、COI等多个基因部分片段序列，对小鲵属开展了较为全面系统的研究。分析方法上，针对小鲵属物种各类群的具体情况，运用了处于领域前沿的多种分析方法。应用PAUP、MrBayes、Modeltest、Mega等软件，采用了最大简约法（MP）、邻接法（NJ）、贝叶斯推断（BI）及K2P遗传距离分析等方法。 本研究对小鲵属进行了较为全面的系统发育研究，弥补了有关小鲵属系统发育研究的不足，并得出了以下结果： （1）关于豫南小鲵Hynobius yunanicus的有效性，基于细胞色素b序列的系统发育关系联合形态和染色体组型等证据证明了豫南小鲵是商城肥鲵的同物异名。 （2）获得了较为全面的小鲵属物种系统发育树，并以此解释了北海道滞育小鲵、东北小鲵、中国小鲵与义乌小鲵等存在的分类问题。 （3）本研究利用DNA条形码技术对小鲵属及小鲵科物种进行了鉴定，再次证明豫南小鲵为商城肥鲵的同物异名；并认为猫儿山小鲵与挂榜山小鲵为同物异名。 综上，本研究较为完整地勾勒了小鲵属的系统发育关系全貌，并对小鲵属物种的起源进行了推测。 Hynobius, the type genus of the Family Hynobiidae, is the only exclusively Asian salamander genus. This genus which contains 29 species (beyond half of total Family), is the key group in Hynobiidae. The genus distributed across Palaearctic and Oriental Realm, and was found in China, Korea, and Japan. Systematics of genus Hynobius draws attention of researchers all the times. Resolving the taxonomic and phynogenetic questions of Hynobius is very important to the evolutionary research of Family Hynobiidae. Firstly, studies on systematics of genus Hynobius based on morphology, karyotype and molecular phylogeny of Hynobius are reviewed along with existing questions of this genus. The sequential reaserch project of phylogenetics is perspectively outlined. Using molecular data, we compared Hynobius yunanicus with a sympatric species Pachyhynobius shangchengensis. Our cytb sequences associating with karyotypic and morphological data supportted that H. yunanicus is not a valid species, but a synonym of P. shangchengensis. Because of phenotypic plasticity, some morphological characters are not even suitable for identifying hynobiids. The taxonomy of hynobiids is still controversial to a certain extent (Zhao et al. 1993; Fei, 1999; Chen et al. 2001; Zeng et al. 2006) and needs to be resolved by a new method. Here we examined the utility of COI barcoding for the discrimination of hynobiids. Meantime, the taxonomy of this Family was looked-over again. Our result show that the DNA Barcoding based on COI is easier and more rapidly than classic methods. And the DNA Barcodes data supported the actual taxonomy of Hynobiidae. Based on the achievements of our research, the phylogeny of Hynobius was reconstructed including some new species (H. maoershanensis, H. guabangshanensis, etc). Besides the phylogenetics of Hynobius was outlined, some questions and the hypothesis about the origin of genus Hynobius was put out.

Topological objects in two-gap superconductor

We discuss the non-Abelian topological objects, in particular the non-Abrikosov vortex and the magnetic knot made of the twisted non-Abrikosov vortex, in two-gap superconductor. We show that there are two types of non-Abrikosov vortex in Ginzburg-Landau theory of two-gap superconductor, the D-type which has no concentration of the condensate at the core and the N-type which has a non-trivial profile of the condensate at the core, under a wide class of realistic interaction potential. We prove that these non-Abrikosov vortices can have either integral or fractional magnetic flux, depending on the interaction potential. We show that they are described by the non-Abelian topology pi(2)(S-2) and pi(1)(S-1), in addition to the well-known Abelian topology pi(1)(S-1). Furthermore, we discuss the possibility to construct a stable magnetic knot in two-gap superconductor by twisting the non-Abrikosov vortex and connecting two periodic ends together, whose knot topology pi(3)(S-2) is described by the Chern-Simon index of the electromagnetic potential. We argue that similar topological objects may exist in multi-gap or multi-layer superconductors and multi-component Bose-Einstein condensates and superfluids, and discuss how these topological objects can be constructed in MgB2, Sr2RuO4, He-3, and liquid metallic hydrogen.

reuse strategies in distributed complex event detection

Software Engineering Society of Korean; Institute for Information Scientists and Engineers; IEEE Reliability Society; KAIST (Korea Advanced Institute of Science and Technology); Korea Information Promotion Agency; Samsung SDS