The electronic structure of strained ZnO/MgxZn1-xO superlattices and the influence of polarization

Based on the effective-mass model, the lower energies of the electron and the hole of ZnO/MgxZn1-xO superlattices are calculated. Because of the mismatch of the lattice constant between the ZnO well and the MgxZn1-xO barrier, piezoelectric and spontaneous polarization exist in ZnO/MgxZn1-xO superlattices and a macroscopical internal electric held is found when well width L-w >4 nm and Mg concentration x > 0.2. The parameters of ZnO/MgxZn1-xO superlattices such as lattice constant, band offset, etc. are also proposed. Through calculations, we found the internal electric field can change the lowest energies of the electron and hole to 105.4 and 85.1 meV when well width L-w up to 70 angstrom, which will influence the electronic and optical properties of ZnO/MgxZn1-xO superlattices greatly, while the Rashba effect from the internal electric field is so small that it can be neglected. The ground state exciton energies with different Mg concentration x are also calculated by variational method, our results are very close to the experimental results when Mg concentration x <= 0.3. (C) 2008 Elsevier B.V. All rights reserved.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Spin relaxation in diluted magnetic semiconductor quantum dots

Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and deformation potential is included. The resulting spin lifetime is typically on the order of microseconds. The effectiveness of the phonon-mediated spin-flip mechanism increases with increasing Mn concentration, electron spin splitting, vertical confining strength, and lateral diameter, while it shows nonmonotonic dependence on the magnetic field and temperature. An interesting finding is that the spin relaxation in a small quantum dot is suppressed for strong magnetic field and low Mn concentration at low temperature.

Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates

In this study, we report comparative luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). High-density InGaN quantum dots (QDs) are formed on GaN templates by decreasing the growth temperature and increasing the adatom hopping-barrier through surface passivation. Atomic force microscopy (AFM) has been employed to estimate the size and height of these dots. Photoluminescence (PL) spectra recorded from (1120) InGaN QDs/(1102) sapphire show much stronger emission intensity compared to spectra recorded from (0001) InGaN QDs/(0001) sapphire. Due to the absence of strong spontaneous polarization and piezoelectric field, such (1150) InGaN QDs in the active layers would lead to high efficiency light emitting devices. (c) 2005 Elsevier B.V. All rights reserved.

Design and characteristics of quantum cascade laser-based CO detection system

National High Technology Research and Development Program of China 2007AA03Z112；Program of Ministry of Education of China 20060183030；Program of Jilin Provincial Science and Technology Department of China 20070709；Program of Bureau of Science and Technology of Changchun City 2007107

Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells

Excitation-power dependence of hydrostatic pressure coefficients (dE/dP) of InxGa1-xN/InyGa1-yN multiple quantum wells is reported. When the excitation power increases from 1.0 to 33 mW, dE/dP increases from 26.9 to 33.8 meV/GPa, which is an increase by 25%. A saturation behavior of dE/dP with the excitation power is observed. The increment of dE/dP with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.

The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells

(1 1 (2) over bar 0) GaN/InGaN multiple quantum wells (MQWs) were grown on (1 (2) over bar 0 2) sapphire by metal-organic vapor phase epitaxy. The excitation-intensity-dependent photoluminescence (PL) spectrum of these samples was measured, and no peak shift was observed. This phenomenon was attributed to the absence of piezoelectric field (PEF) along the growth orientation of the (1 1 (2) over bar 0) face MQWs. Our experimental results showed that PEF was the main reason causing peak blueshift in excitation-intensity-dependent PL spectrum of (0 0 0 1) InGaN/GaN NIQWs. It was expected that fabricating (1 1 (2) over bar 0) face nitride device should be a method to avoid PEF and get low-threshold, high-quantum-efficiency and stable-emission-wavelength light-emission devices. (C) 2002 Elsevier Science B.V. All rights reserved.

Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells

Excitonic states in AlxGa1-xN/GaN quantum wells (QWs) are studied within the framework of effective-mass theory. Spontaneous and piezoelectric polarizations are included and their impact on the excitonic states and optical properties are studied. We witnessed a significant blue shift in transition energy when the barrier width decreases and we attributed this to the redistribution of the built-in electric field between well layers and barrier layers. For the exciton the binding energies, we found in narrow QWs that there exists a critical value for barrier width, which demarcates the borderline for quantum confinement effect and the quantum confined Stark effect. Exciton and free carrier radiative lifetimes are estimated by simple argumentation. The calculated results suggest that there are efficient non-radiative mechanisms in narrow barrier QWs. (C) 2002 Elsevier Science Ltd. All rights reserved.

High-quality GaN grown by gas-source MBE

High-quality GaN epilayers were consistently obtained using a home-made gas-sourer MBE system on sapphire substrates. Room-temperature electron mobility of the grown GaN film is 300 cm(2)/V s with a background electron concentration as low as 2 x 10(17) cm(-3) The full-width at half-maximum of the GaN (0 0 0 2) double-crystal X-ray rocking curve is 6 arcmin. At low temperature (3.5 K), the FWHM of the: near-band-edge photoluminescence emission line is 10 meV. Furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a GaN/AlN/GaN/sapphire structure. Its room-temperature and low-temperature (77 K) electron mobility is 680 cm(2)/V s and 1700 cm(2)/V s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (C) 2001 Published by Elsevier Science.

Electro-mass olfactory multi-sensor (EMMS)

For an olfactory sensor or electronic nose, the task is not only to detect the object concentration, but also to recognize it. It is well known that all the elements can be identified by their charge to mass ratio e(+)/m. We tried to imitate this principle for molecular recognition. Two kinds of sensors are used simultaneously in testing. One is quartz crystal microbalance (QCM) for detecting the change in mass, the other is interdigital electrode (IE) for detecting the change in conduction, as an electro-mass multi-sensor (EMMS). in this paper, the principle and the feasibility of this method are discussed. The preliminary results on the recognition of alcohol by EMMS coated with lipids are presented. Meanwhile, the multi-sensor can also be used as an instrument for research on some physico-chemistry problems. The change in conduction of coated membrane caused by one absorbed molecule is reported. It is found that when a QCM is coated with membrane, it still obeys the relationship Delta F (frequency change of QCM) = K Delta m (mass change of absorbed substance) and the proportional coefficient, K, depends not only on quartz properties but also on membrane characteristics as well. (C) 2000 Elsevier Science S.A. All rights reserved.

Ground target detection, classification and sensor fusion in distributed fiber seismic sensor network - art. no. 683015

This paper describes the ground target detection, classification and sensor fusion problems in distributed fiber seismic sensor network. Compared with conventional piezoelectric seismic sensor used in UGS, fiber optic sensor has advantages of high sensitivity and resistance to electromagnetic disturbance. We have developed a fiber seismic sensor network for target detection and classification. However, ground target recognition based on seismic sensor is a very challenging problem because of the non-stationary characteristic of seismic signal and complicated real life application environment. To solve these difficulties, we study robust feature extraction and classification algorithms adapted to fiber sensor network. An united multi-feature (UMF) method is used. An adaptive threshold detection algorithm is proposed to minimize the false alarm rate. Three kinds of targets comprise personnel, wheeled vehicle and tracked vehicle are concerned in the system. The classification simulation result shows that the SVM classifier outperforms the GMM and BPNN. The sensor fusion method based on D-S evidence theory is discussed to fully utilize information of fiber sensor array and improve overall performance of the system. A field experiment is organized to test the performance of fiber sensor network and gather real signal of targets for classification testing.

Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

The influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy (XPS) is discussed, and a modification method based on a modified self-consistent calculation is proposed to eliminate the influence and thus increasing the precision of XPS. Considering the spontaneous polarization at the surfaces and interfaces and the different positions of Fermi levels at the surfaces, we compare the energy band structures of Al/Ga-polar AlN/GaN and N-polar GaN/AlN heterojunctions, and give corrections to the XPS-measured valence band offsets. Other AlN/GaN heterojunctions and the piezoelectric polarization are also introduced and discussed in this paper.

动态环境中的飞行器实时三维航迹规划方法研究

本文提出了一种新的飞行器三维航迹规划方法—SDS。该方法能够在具有预先未知威胁的飞行环境中在线实时航迹规划。当飞行器上装备的探测器探测到飞行环境中有预先未知的威胁出现时，根据探测到的信息及时更新威胁数据。SDS根据新环境信息局部修正受到影响的航迹段来获得新的全局最优航迹。在每一时刻考虑当前已知的信息下，SDS生成的航迹是满足要求的最优航迹。

掺杂压电陶瓷／铁电薄膜的制备和研究

PZT陶瓷粉体的制备和研究。用溶胶一凝胶法制备了错钦酸铅Pb(Zr_(0.52)Ti_(0.48))O_3（PZT），研究了溶剂乙二醇单甲醚和水的比例对PZT的晶化温度和晶粒尺寸的影响，结果表明，随溶剂比例的增大，PZT粉体的晶化温度升高晶粒尺寸增大，当V（C_3H_9O_2）／V（H_2O）＝4.47时，不仅缩短了溶胶-凝胶过程的时间，且得到的PZT粉体晶化温度低（443℃），晶粒的粒径分布集中（60-70nm）。PZT掺杂压电陶瓷的制备和研究。用同一主族元素对PZT进行掺杂改性实验，制备了Ca-PZT，Sr-PZT，Ba-PZT三个系列的压电陶瓷体系，其中每个体系中又包含1％、3％、5％、7％、9％（10％，11%）不同的掺杂量。经过压片，蒸镀电极，极化处理后测定其由，常数，结果表明，Ba离子的半径是最适合掺杂的离子半径。PZT和PbTIO。（PT）稳定溶胶的制备。在溶胶形成过程中，通过调整溶剂乙二醇单甲醚和水的比例，并加入适当量的乙酞丙酮作稳定剂，在有水体系下制备稳定的PZT和PT溶胶前驱体。该方法省略了制备中的蒸馏过程，简化了PZT和PT稳定溶胶的制备工艺。PZT铁电薄膜的制备。用自制的溶胶进行旋涂制膜，制备了膜层厚度不同的PZT和PT-PZT薄膜，在不同的锻烧温度，锻烧时间下处理为晶态膜，并对晶态膜进行表征，证明获得了钙钦矿结构的PZT晶态膜。

体细胞核移植影响因素的研究

尽管体细胞核移植(somatic cell nuclear transfer, SCNT)技术仍然处于 起步发展阶段，但是随着体细胞核移植技术在近些年来的飞速发展，人们已经得 到了多种哺乳动物体细胞核移植的存活后代。体细胞核移植技术在生物医药、农 业及其它领域的应用显示了这项技术的巨大发展前景。另一方面，人们发现体细 胞核移植效率低下并且体细胞克隆动物存在许多缺陷，这些主要是由于核移植技 术，供体细胞选择，体外培养系统以及卵母细胞的状态等的差异导致的。本研究 主要围绕着这些因素在体细胞核移植过程中对于克隆胚胎植入前后发育的影响 而开展，目的在于提高体细胞核移植的效率。 实验一，研究了几个因素对克隆胚胎发育和克隆效率的影响，为提高体细胞 核移植效率提供一些依据。这部分研究主要包括四倍体半克隆小鼠研究和蛋白酶 体抑制剂在克隆胚胎和孤雌激活胚胎发育中的影响。四倍体体细胞半克隆 （tetraploid semi-cloned , TSC）胚胎的体外发育结果表明，虽然TSC 胚胎可 能避免二倍体半克隆胚胎发育过程中的非整倍体现象，但是仍然不能形成胎儿。 另外，利用蛋白酶体抑制剂MG132 处理克隆胚胎的结果表明，虽然MG132 通过抑 制成熟促进因子（maturation promoting factors，MPF）活性的降低可以提高 克隆胚胎的体外发育率，但是没有改变克隆胚胎的质量。 实验二，研究了克隆技术在克隆胚胎构建和发育上的影响。首先，我们研究 了完整颗粒细胞注射到卵母细胞中所引起的变化。我们发现完整的颗粒细胞注入 到卵母细胞中之后很快引起细胞膜裂解和细胞核碎裂，从而导致激活后重构胚胎 的碎裂。这一实验表明完整供体细胞核注入的方法不适用于小鼠体细胞克隆。接 下来我们研究了不同的核移植技术――利用piezo 的直接注射法（piezoelectric microinjection，PEM）和电融合法（Electrofusion，EF）――对植入前后的克隆胚 胎以及出生后的克隆动物的影响。研究的结果发现，在PEM 法中，提高piezo 脉 冲的强度会导致供体细胞核DNA 断裂增加，使植入前克隆胚胎的细胞数目减少， 凋亡增加，从而降低克隆胚胎的质量。相反，在用EF 法产生的胚胎中细胞核DNA 的断裂很少，克隆胚胎质量相对较好。实验的结果表明，由于两种克隆技术利用 的原理不同，会对克隆胚胎的发育产生一定的影响，从而改变克隆的效率。 实验三，研究了猕猴体细胞克隆胚胎早期发育过程中细胞核内有丝分裂器蛋 白[Nuclear Mitotic Apparatus Protein，NuMA]的表达和分布。尽管在有些猕猴体 细胞核移植胚胎中没有检测到NuMA 的正确表达和分布并且有些胚胎出现了微 管组装异常，但是大多数猕猴体细胞核移植胚胎具有正常的NuMA 蛋白表达和 正常的核型。通过改进操作技术我们得到了可以发育到正常囊胚的猕猴体细胞核 移植胚胎。这些结果提示猕猴SCNT 胚胎发育失败的原因不是NuMA 等重要蛋 白的缺失。