Analytical formulation of modal frequency split in the elliptical mode of SCS micromechanical disk resonators

This paper presents an analytical formulation of frequency splitting observed in the elliptical modes of single crystal silicon (SCS) micromechanical disk resonators. Taking the anisotropic elasticity of SCS into account, new formulae for computing modal mass and modal stiffness are first derived for accurate prediction of the modal frequency. The derived results are in good agreement with finite element simulation, showing a factor of 10 improvement in the prediction accuracy as compared to using the formula for the isotropic case. In addition, the analysis successfully explains the effect of anisotropy on the modal frequency splitting of primary elliptical modes, for which the maximum modal displacement is aligned with the directions of maximum (1 1 0) and minimum (1 0 0) elasticity respectively on a (1 0 0) SCS wafer. The measured frequency splitting of other degenerate modes is due to the manufacturing imperfections. © 2014 IOP Publishing Ltd.

Devitrite-based optical diffusers.

Devitrite is a novel material produced by heat treatment of commercial soda-lime-silica glass. It consists of fans of needle-like crystals which can extend up to several millimeters and have interspacings of up to a few hundred nanometers. To date, only the material properties of devitrite have been reported, and there has been a distinct lack of research on using it for optical applications. In this study, we demonstrate that randomly oriented fans of devitrite crystals can act as highly efficient diffusers for visible light. Devitrite crystals produce phase modulation of light because of their relatively high anisotropy. The nanoscale spacings between these needles enable light to be diffused to large scattering angles. Experimentally measured results suggest that light diffusion patterns with beam widths of up to 120° are produced. Since devitrite is an inexpensive material to produce, it has the potential to be used in a variety of commercial applications.

Initiation of immersed granular avalanches.

By means of coupled molecular dynamics-computational fluid dynamics simulations, we analyze the initiation of avalanches in a granular bed of spherical particles immersed in a viscous fluid and inclined above its angle of repose. In quantitative agreement with experiments, we find that the bed is unstable for a packing fraction below 0.59 but is stabilized above this packing fraction by negative excess pore pressure induced by the effect of dilatancy. From detailed numerical data, we explore the time evolution of shear strain, packing fraction, excess pore pressures, and granular microstructure in this creeplike pressure redistribution regime, and we show that they scale excellently with a characteristic time extracted from a model based on the balance of granular stresses in the presence of a negative excess pressure and its interplay with dilatancy. The cumulative shear strain at failure is found to be ≃ 0.2, in close agreement with the experiments, irrespective of the initial packing fraction and inclination angle. Remarkably, the avalanche is triggered when dilatancy vanishes instantly as a result of fluctuations while the average dilatancy is still positive (expanding bed) with a packing fraction that declines with the initial packing fraction. Another nontrivial feature of this creeplike regime is that, in contrast to dry granular materials, the internal friction angle of the bed at failure is independent of dilatancy but depends on the inclination angle, leading therefore to a nonlinear dependence of the excess pore pressure on the inclination angle. We show that this behavior may be described in terms of the contact network anisotropy, which increases with a nearly constant connectivity and levels off at a value (critical state) that increases with the inclination angle. These features suggest that the behavior of immersed granular materials is controlled not only directly by hydrodynamic forces acting on the particles but also by the influence of the fluid on the granular microstructure.

Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs

We report that, by linearly polarized pumping of different wavelengths, Kerr transients appear at zero magnetic field only in the case when GaMnAs samples are initialized at 3 K by first applying a 0.8 Tesla field and then returning to zero field. We find that, instead of magnetization precession, the near-band gap excitation induces a coherent out-of-plane turning of magnetization, which shows very long relaxation dynamics with no precession. When photon energy increases, the peak value of the Kerr transient increases, but it decays rapidly to the original slow transient seen under the near-band-gap excitation.

Direct detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction: Utilizing the SU(2) symmetry

We propose a simple method to detect the relative strength of Rashba and Dresselhaus spin-orbit interactions in quantum wells (QWs) without relying on the directional-dependent physical quantities. This method utilizes the two different critical gate voltages that leading to the remarkable signals of SU(2) symmetry, which happens to reflect the intrinsic-structure-inversion asymmetry of the QW. We support our proposal by the numerical calculation of in-plane relaxation times based on the self-consistent eight-band Kane model. We find that the two different critical gate voltages leading to the maximum spin-relaxation times [one effect of the SU(2) symmetry] can simply determine the ratio of the coefficients of Rashba and Dresselhaus terms. Our proposal can also be generalized to extract the relative strengths of the spin-orbit interactions in quantum-wire and quantum-dot structures.

Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films

We present a study of magnetic anisotropy by using magneto-transport and direct magnetization measurements on tensile strained (Ga,Mn)As films. The magnetic easy axis of the films is in-plane at low temperatures, while the easy axis flips to out-of-plane when temperature is raised or hole concentration is increased. This easy axis reorientation is explained qualitatively in a simple physical picture by Zeners pd model. In addition, the magneto-crystalline anisotropic resistance was also investigated experimentally and theoretically based on the single magnetic domain model. The dependence of sheet resistance on the angle between the magnetic field and [1 0 0] direction was measured. It is found that the magnetization vector M in the single-domain state deviates from the external magnetic field H direction at low magnetic field, while for high magnetic field, M continuously moves following the field direction, which leads to different resistivity function behaviors.

Magnetic anisotropies of laterally confined structures of epitaxial Fe films on GaAs (001)

We have investigated magnetic properties of laterally confined structures of epitaxial Fe films on GaAs (001). Fe films with different thicknesses were grown by molecular-beam epitaxy and patterned into regular arrays of rectangles with varying aspect ratios. In-plane magnetic anisotropy was observed in all of the patterned Fe films both at 15 and 300 K. We have demonstrated that the coercive fields can be tuned by varying the aspect ratios of the structures. The magnitudes of the corresponding anisotropy constants have been determined and the shape anisotropy constant is found to be enhanced as the aspect ratio is increased.

Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN

We investigate the uniaxial strain effect in the c-plane on optical properties of wurtzite GaN based on k center dot p theory, the spin-orbit interactions are also taken into account. The energy dispersions show that the uniaxial strain in the c-plane gives an anisotropic energy splitting in the k(x) - k(y) plane, which can reduce the density of states. The uniaxial strain also results in giant in-plane optical polarization anisotropy, hence causes the threshold carrier density reduced. We clarify the relations between the uniaxial strain and the optical polarization properties. As a result, it is suggested that the compressive uniaxial strain perpendicular to the laser cavity direction in the c-plane is one of the preferable approaches for the effcient improvement of GaN-based laser performance.

Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate

We have investigated the magnetic properties of Co-doped zinc oxide (ZnO) film deposited on silicon substrate by magnetron sputtering. Co ions have a valence of 2+ and substitute for Zn sites in the lattice. By using a chemical etching method, an extrinsic ferromagnetism was demonstrated. The observed ferromagnetism is neither associated with magnetic precipitates nor with contamination, but originates from the silicon/silicon oxide interface. This interface ferromagnetism is characterized by being temperature independent and by having a parallel magnetic anisotropy. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989128]

Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films

Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films with a subsequent rapid thermal annealing (RTA) process. The structure, morphology and magnetic characteristics of the samples were investigated by means of high-resolution x-ray diffraction (XRD), atomic force microscopy (AFM) and a superconducting quantum interference device (SQUID), respectively. The XRD analysis shows that the RTA process can effectively recover the crystal deterioration caused by the implantation process and that there is no obvious change in the lattice parameter for the as-annealed sample. The SQUID result indicates that the as-annealed sample shows ferromagnetic properties and magnetic anisotropy at room temperature.

Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains

We have studied the lateral carrier transfer in a specially designed quantum dot chain structure by means of time-resolved photoluminescence (PL) and polarization PL. The PL decay time increases with temperature, following the T-1/2 law for the typical one-dimensional quantum system. The decay time depends strongly on the emission energy: it decreases as the photon energy increases. Moreover, a strong polarization anisotropy is observed. These results are attributed to the efficient lateral transfer of carriers along the chain direction. (c) 2008 American Institute of Physics.

Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction

GaSb epilayers grown on GaAs(001) vicinal substrate misoriented towards (111) plane were studied using high-resolution x-ray diffraction (HRXRD). The results show that GaSb epilayers exhibit positive crystallographic tilt and the distribution of 60 degrees misfit dislocations (MDs) is imbalanced. The vicinal substrate also leads to the anisotropy of the mosaic structure, i.e. the lateral coherent lengths in [1 (1) over bar0] directions are larger than those in [110] directions. Furthermore, the full-width at half maximum (FWHM) of the off-axis peaks varies with the inclination angle, which is a result of different dislocation densities in the {111} glide planes.

Quasi-hexagonal ordered arrays of FePt nanoparticles prepared by a micellar method

Hexagonally ordered arrays of magnetic FePt nanoparticles on Si substrates are prepared by a self assembly of diblock copolymer PS-b-P2VP in toluene, a dip coating process and finally plasma treatment. The as-treated FePt nanoparticles are covered by an oxide layer that can be removed by a 40 s Ar+ sputtering. The effects of the sequence of adding salts on the composition distribution are revealed by x-ray photoelectron spectroscopy measurements. No particle agglomeration is observed after 600 degrees C annealing for the present ordered array of FePt nanoparticles, which exhibits advantages in patterning FePt nanoparticles by a micellar method. Moreover, magnetic properties of the annealed FePt nanoparticles at room temperature are investigated by a vibrating sample magnetometer.

Optimal teleportation via thermal entangled states of a two-qubit Heisenberg chain

We study the optimal teleportation based on Bell measurements via the thermal states of a two-qubit Heisenberg XXX chain in the presence of the Dzyaloshinsky-Moriya (DM) anisotropic antisymmetric interaction and obtain an optimal unitary transformation. The explicit expressions of the output state and the teleportation fidelity are presented and compared with those of the standard protocol. It is shown that in this protocol the teleportation fidelity is always larger and the unit fidelity is achieved at zero temperature. The DM interaction can enhance the teleportation fidelity at finite temperatures, as opposed to the effect of the interaction in the standard protocol. Cases with other types of anisotropies are also discussed. Copyright (C) EPLA, 2009

Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires

We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.