Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires


Autoria(s): Wang M; Chang K; Wang LG; Dai N; Peeters FM
Data(s)

2009

Resumo

We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.

NSFC 60525405 10874175Flemish Science Foundation (FWO-Vl) Belgian Science Policy (IAP) Flemish-China Sweden-China bilateral program This work is partly supported by the NSFC No. 60525405 and 10874175 the Flemish Science Foundation (FWO-Vl) the Belgian Science Policy (IAP) and the Flemish-China and the Sweden-China bilateral program.

Identificador

http://ir.semi.ac.cn/handle/172111/7027

http://www.irgrid.ac.cn/handle/1471x/63251

Idioma(s)

英语

Fonte

Wang M ; Chang K ; Wang LG ; Dai N ; Peeters FM .Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires ,NANOTECHNOLOGY,2009 ,20(36):Art. No. 365202

Palavras-Chave #半导体物理 #CONDUCTANCE
Tipo

期刊论文