Dynamic power management approaches based on neural network

Dynamic Power Management (DPM) is a technique to reduce power consumption of electronic system. by selectively shutting down idle components. In this article we try to introduce back propagation network and radial basis network into the research of the system-level policies. We proposed two PAY policies-Back propagation Power Management (BPPM) and Radial Basis Function Power management (RBFPM) which are based on Artificial Neural Networks (ANN). Our experiments show that the two power management policies greatly lowered the system-level power consumption and have higher performance than traditional Power Management(PM) techniques-BPPM is 1.09-competitive and RBFPM is 1.08-competitive vs. 1.79,145,1.18-competitive separately for traditional timeout PM, adaptive predictive PM and stochastic PM.

Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate

Self-ordered porous alumina films on a semi-insulated GaAs substrate were prepared in oxalic acid aqueous solutions by three-step anodization. The I-t curve of anodization process was recorded to observe time effects of anodization. Atomic force microscopy was used to investigate structure and morphology of alumina films. It was revealed that the case of oxalic acid resulted in a self-ordered porous structure, with the pore diameters of 60-70 nm, the pore density of the order of about 10(10) pore cm(-2), and interpore distances of 95-100nm. At the same time the pore size and shape change with the pore widening time. Field-enhanced dissolution model and theory of deformation relaxation combined were brought forward to be the cause of self-ordered pore structure according to I-t curve of anodization and structure characteristics of porous alumina films. (c) 2006 Elsevier Ltd. All rights reserved.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

用分子动力学模拟甲烷水合物热激法分解

用分子动力学模拟方法研究甲烷水合物热激法分解，系统地研究注入340 K液态水的结构Ⅰ型甲烷水合物的分解机理.模拟显示水合物表层水分子与高温液态水分子接触获得热能，分子运动激烈，摆脱水分子间的氢键束缚，笼状结构被破坏.甲烷分子获得热能从笼中挣脱，向外体系扩散.热能通过分子碰撞从外层传递给内层水分子，水合物逐层分解.对比注入277K液态水体系模拟结果，得出热激法促进水合物分解.

水凝胶的制备及壳聚糖的改性和应用

水凝胶用作创口敷料时有很多的优点。壳聚糖是天然的阳离子多糖,已经在很多领域得到了应用。我们制备了几种具有抑菌能力的水凝胶敷料，同时利用可生物降解聚酯和多聚肽对壳聚糖进行了修饰，得到了一些新的结果。 本论文的工作主要包括以下两部分： 一.含有抗生素或纳米银粒子的水凝胶的制备和表征。 1．载药聚乙烯醇/聚乙烯基吡咯烷酮/壳聚糖（PVA-PVP-Chitosan）复合水凝胶的制备和抑菌性能评价。采用循环冷冻－熔融与辐射交联相结合的方法制备出了PVA-PVP-chitosan复合水凝胶，测定了凝胶的溶胀率、凝胶含量、力学强度和结晶性能，并考察了所用壳聚糖分子量，冷冻－熔融循环处理次数和辐射剂量对凝胶性能的影响。然后通过溶胀法将抗生素（环丙沙星）和壳寡糖载入水凝胶中，考察了它们的体外释放行为。同时利用琼脂糖平板法检验了载药凝胶的抑菌能力，结果表明它们可以有效抑制革兰氏阳性菌和革兰氏阴性菌的繁殖和生长。 2．含纳米银-PVA-PVP水凝胶的制备和抑菌性能评价。通过循环冷冻－熔融法制备了含银的PVA-PVP复合水凝胶。以含银的PVA-PVP复合膜为模型，利用DSC、红外光谱、紫外－可见光谱和X-射线衍射考察了掺入的纳米银与PVA-PVP网络的相互作用。利用扫描电镜观察了PVA-PVP凝胶的网络结构和银纳米粒子在网络中的分布。利用琼脂糖平板法和LB肉汤法对含银PVA-PVP凝胶的抑菌性能进行了评价，结果证明这种水凝胶可以有效抑制大肠杆菌和金黄色葡萄球菌的生长和繁殖。 二. 壳聚糖的改性和应用。 1．发展了一种制备聚ε－己内酯（PCL）接枝壳聚糖共聚物的新方法，并且由合成的接枝共聚物在水中自组装得到纳米粒子。利用DLS、AFM和SEM对纳米粒子进行了表征，结果显示制备的纳米粒子为圆球形或椭圆形。利用茚三酮显色法准确测定了活性胺基的含量，发现纳米粒子表面活性胺基的数量可以通过改变PCL接枝度进行调节。 2．由6-O-三苯甲基壳聚糖引发赖氨酸NCA的开环聚合得到了聚赖氨酸（PLL）接枝壳聚糖阳离子共聚物。利用红外光谱、核磁共振和GPC对接枝共聚物的分子结构和分子量进行了表征。通过动态光散射测量发现接枝共聚物可以和小牛胸腺DNA形成粒径在100~340 nm之间的复合物。凝胶阻滞电泳证明接枝共聚物对质粒DNA的结合和保护能力要优于壳聚糖。细胞转染实验证明接枝共聚物对293T和Hela细胞的转染效率要远远高于壳聚糖原料和PLL。同时，接枝共聚物的转染效率对PLL的聚合度有明显的依赖性，增加PLL聚合度有助于提高接枝共聚物的转染效率。这种新型的阳离子接枝共聚物有望用作高效基因载体。

Mg-Al-Mn-RE系合金组织与性能研究

利用金属型铸造制备了Mg-5Al-0.3Mn-xRE (x = 0~4, wt%，RE = Ce, Nd, Sm, Y和(CeLa)混合稀土)系列合金，研究了铸态合金的组织和力学性能。利用轧制和挤压技术对优化出的合金进行了变形加工处理，并研究了合金加工后的组织和力学性能。 对于铸态合金，稀土元素不仅可以细化合金的晶粒，而且形成不同类型的Al-RE化合物，含Ce的合金中生成Al11Ce3相，含Nd或Sm的合金中，主要生成Al11Nd3 (Al11Sm3)相和少量的Al2Nd (Al2Sm)相，含Y的合金中生成Al2Y相。另外，添加稀土可以改变Mg17Al12相的形貌，使其变得更加细小、弥散。添加适量的稀土可以明显提高铸态合金在室温和150℃下的力学性能，Mg-5Al-0.3Mn-1.5Ce, Mg-5Al-0.3Mn-2Nd和Mg-5Al-0.3Mn-2Sm合金在各自的体系中具有最佳的综合力学性能。合金力学性能提高的主要原因是细晶强化、Al-RE化合物第二相强化以及减弱Mg17Al12相对合金高温力学性能的不利影响。 对Mg-5Al-0.3Mn-(1.0, 1.5, 2.0)Ce，Mg-5Al-0.3Mn-2Nd，Mg-5Al-0.3Mn-1.5(CeLa)和Mg-5Al-0.3Mn-3Y合金在300-400℃下进行了热轧制或挤压变形，与铸态合金相比，轧制和挤压合金具有更高的力学性能。轧制合金的室温抗拉强度为290-340 MPa，较铸态合金提高约50％，屈服强度约为210-260 MPa，较铸态合金提高约2倍。挤压态合金的抗拉强度为260-270 MPa，屈服强度为160-190MPa，伸长率为20-22％；150℃的力学性能也得到了明显改善。 结合热力学计算、合金化元素之间的电负性差、化合物相的生成焓数据以及相图计算，阐述了稀土化合物相的生成机制，稀土元素与Al元素之间的电负性差大于其与Mg之间的电负性差，且Al-RE相的生成焓远低于Mg-RE和Mg-Al相的生成焓，因此在Mg-Al合金中加入RE后，RE优先与Al形成Al-RE化合物。从晶粒细化、化合物强化相的生成和演变、变形加工处理的位错交互作用等方面讨论了合金的强化机制，认为细晶强化、第二相强化及形变强化是提高合金力学性能的主要机制。

An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

An asymmetric MOSFET-C band-pass filter(BPF)with on chip charge pump auto-tuning is presented.It is implemented in UMC (United Manufacturing Corporation)0.18μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump OUtputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point(HP3) is 16.621 dBm,wim 50 Ω as the source impedance. The input referred noise iS about 47.455μVrms. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm~2 and it can be utilized in GPS (global positioning system)and Bluetooth systems.

光通信用10Gbit／s Transponder的设计

本文分析了在高速光模块设计中介质损耗和微带结构对信号的影响，并对PCB中信号串扰模型的参数进行了计算．解决了高速光模块设计的一些关键问题，设计出满足MSA的300-pin transponder，并对模块进行了一系列性能和指标测试．测试结果表明，该模块完全满足SDH／SONET（STM-64／OC-192）以及10G Ethemet应用要求．

高量子效率前照式GaN基p-i-n结构紫外探测器

研究了Al0.1-Ga0.9N／GaN异质结p-i-n结构可见盲紫外探测器的制备与性能,P区采用Al组分含量为0．1的AlGaN外延材料形成窗口层，使340-365nm波段的紫外光可以直接透过P区到达i区并被吸收，有效提高了这个波段的响应率与量子效率,并且研究了不同P区AlGaN外延层厚度对探测器性能的影响，制备了两种不同P区厚度（0．1μm和0．15μm）的器件，测试结果表明，P区的厚度对200-340nm波段光吸收的量子效率影响较大，而i区的晶体质量的提高可以有效提高340-365nm波段光吸收的量子效率,并且当P区AlGaN厚度为0．15μm时，器件的峰值响应率达到0．214A／W，在考虑表面反射时外量子效率高达85．6％，接近理论极限，并且在零偏压时暗电流密度为3．16nA／cm^2,表明器件具有非常高的信噪比。

半导体激光器温度控制研究

温度对半导体激光器的特性有很大的影响.为了使半导体激光器输出功率稳定,必须对其温度进行高精度的控制.利用PID控制网络设计了温控系统,控制精度达到±0.01℃,与无PID控制网络相比,极大的提高了系统的瞬态特性,并且试验发现采用带有温控系统的半导体激光器的输出功率稳定性比没有温控系统的输出功率得到显著改善。

InxGa（1-x）As/GaAs应变量子阱光学性质

于2010-11-23批量导入