A STUDY OF NITROGEN ISOELECTRONIC TRAPS IN GAAS

Autoria(s): ZHAO XS; LI GH; HAN HX; WANG ZP; TANG RM; CHE RZ
Data(s)

1985
Identificador

http://ir.semi.ac.cn/handle/172111/14725

http://www.irgrid.ac.cn/handle/1471x/101397
Idioma(s)

英语
Fonte

ZHAO XS; LI GH; HAN HX; WANG ZP; TANG RM; CHE RZ.A STUDY OF NITROGEN ISOELECTRONIC TRAPS IN GAAS,CHINESE PHYSICS,1985,5(2):337-340
Palavras-Chave #半导体物理
Tipo

期刊论文
Acesso ao item digital