Polarization holographic high-density optical data storage in bacteriorhodopsin film

Optical films containing the genetic variant bacteriorhodopsin BR-D96N were experimentally studied in view of their properties as media for holographic storage. Different polarization recording schemes were tested and compared. The influence of the polarization states of the recording and readout waves on the retrieved diffractive image's intensity and its signal-to-noise ratio were analyzed. The experimental results showed that, compared with the other tested polarization relations during holographic recording, the discrimination between the polarization states of diffracted and scattered light is optimized with orthogonal circular polarization of the recording beams, and thus a high signal-to-noise ratio and a high diffraction efficiency are obtained. Using a He-Ne laser (633 nm, 3 mW) for recording and readout, a spatial light modulator as a data input element, and a 2D-CCD sensor for data capture in a Fourier-transform holographic setup, a storage density of 2 x 10(8) bits/cm(2) was obtained on a 60 x 42 mu m(2) area in the BR-D96N film. The readout of encoded binary data was possible with a zero-error rate at the tested storage density. (c) 2005 Optical Society of America.

Observation of quantum beat in Rb by parametric four-wave mixing

Two coupled parametric four-wave-mixing processed in Rb atoms are studied using perturbation theory, which reveals clear evidence of the appearance of quantum beat at 608 cm(-1), corresponding to the energy difference of the 7s - 5d states of Rb atoms, in the parametric four-wave-mixing signals. A pump-probe technique is utilized to observe the quantum beat. Time-varying characteristics of the quantum beat are investigated using time-dependent Fourier transform. The results show that the time-varying characteristics of the quantum beat potential tool for monitoring the dissociation of molecules.

Identical dual-wavelength fiber Bragg Gratings

In this paper, identical dual-wavelength fiber Bragg, gratings (FBGs) are theoretically proposed and experimentally demonstrated. On the assistance of the Fourier theory, the gratings with symmetrical spectrum are designed in the case of weak refractive-index modulations. With the. perturbation technique, the results achieved in the previous step are modified to meet the strong refractive-index modulation gratings. Based on the coupled-mode theory, we have optimized and achieved the identical dual-wavelength FBGs with two channels that have equal bandwidth and even strength. We have also experimentally demonstrated the proposed FBGs, and the experimental results are compared with theoretical predictions with good agreement.

Principle of the moving-mirror-pair interferometer and the tilt tolerance of the double moving mirror

A novel type of interferometer, the moving-mirror-pair interferometer, is presented, and its principle and properties are studied. The new interferometer is built with three flat mirrors, which include two flat moving mirrors fixed as a single moving part by a rigid structure and one flat fixed mirror. The optical path difference (OPD) is obtained by the straight reciprocating motion of the double moving mirror, and the OPD value is four times the physical shift value of the double moving mirror. The tilt tolerance of the double moving mirror of the novel interferometer is systematically analyzed by means of modulation depth and phase error. Where the square aperture is concerned, the formulas of the tilt tolerance were derived. Due to the novel interferometer's large OPD value and low cost, it is very applicable to the high-spectral-resolution Fourier-transform spectrometers for any wavenumber region from the far infrared to the ultraviolet. (C) 2008 Optical Society of America.

Analysis of the lateral displacement and optical path difference in wide-field-of-view polarization interference imaging spectrometer

The mechanism of beam splitting and principle of wide-field-of-view compensation of modified Savart polariscope in the wide-field-of-view polarization interference imaging spectrometer (WPIIS) are analyzed and discussed. Formulas for the lateral displacement and optical path difference (OPD) produced by the modified Savart polariscope are derived by ray-tracing method. The theoretical and practical guidance is thereby provided for the study, design, modulation, experiment and engineering of the polarization interference imaging spectrometers and other birefringent Fourier-transform spectrometers based on Savart polariscopes. (c) 2006 Elsevier B.V. All rights reserved.

A static polarization imaging spectrometer based on a Savart polariscope

This paper describes the design of an interference imaging spectrometer. A static Polarization Imaging Spectrometer (PIS) based on a single Savart polariscope has been developed. It produces the interferogram and target's image in the spatial domain which are recorded by using a two-dimensional (2D) CCD detector. Imaging lens localizes the interference fringes and target's image coincident with the plane of detector, thereby facilitating an extremely compact design. The spectrum of the input light is reconstructed through the Fourier-transform of the interferogram. The total optics is as small as 20 x 6 cm phi in size and the spectral resolution of the prototype system is 97.66 cm(-1) between 25,000 and 10, 000 cm(-1). The polarization interference imaging device has advantages of ultra-compact size, wide field of view, high throughput and without any moving parts. (C) 2002 Published by Elsevier Science B.V.

傅立叶变换离子回旋共振质谱在含糖小分子分析中的应用

傅立叶变换离子回旋共振质谱是一种近些年来逐渐发展起来的新型质谱仪器，由于该类质谱检测器的设计和检测原理与传统质谱有着根本的区别，通过它获取的数据具有高分辨和高质量测量精度的特点。通常，超过100000以上的分辨本领能够对质谱中非常临近的质谱峰进行区分，并结合串联质谱中的高质谱测量精度数据，可以给出明确的串联质谱碎裂途径。 本论文选择4对具有同分异构特点的二糖黄酮进行了系统研究，实验采取负离子模式的电喷雾傅立叶变换离子回旋共振质谱，结合持续非共振辐照碰撞诱导解离模式，对同分异构体的区分进行了研究。在实验过程中，建立了一种全新的质量校正方法，使得质谱测量平均误差小于1.00 ppm1。首次直接利用子离子的结构信息，确定了负离子模式下二糖黄酮的去质子化位点。实验中还发现，RDA解离途径仅仅当二糖黄酮的苷元是黄烷酮并且B环上没有过多的富电子基团的情况下才能发生，同时，具有α1→2糖连接的二糖黄酮在串联质谱中能够发生多键解离，并采用Gaussian 03 程序利用 B3LYP/6-31G方法对其进行了理论计算。为了进一步讨论α1→2糖连接二糖黄酮的串联质谱特点，在温和实验条件下，对上述化合物进行了氢氘交换实验。实验中首次发现温和条件下，黄酮的氢氘交换位点依赖于苷元结构，除了糖链上羟基和苷元上的酚羟基能够发生氢氘交换外，苷元为黄烷酮的二糖黄酮中，C（3）、C（6）和C（8）上的氢能够被直接交换掉，而苷元为黄酮骨架的二糖黄酮则在此位点不发生氢氘交换反应，并依据高质量测量精度数据对其子离子产生途径进行研究。 论文还系统研究了由葡萄糖缩合而成的二糖，4对二糖异构体负离子模式电喷雾傅立叶变换离子回旋共振质谱研究表明，其离子化过程中，生成的去质子化的二聚体是主要气相离子，依据单糖的实验和计算化学结果，论文中提出二糖化合物的离子化模型。计算化学的结果还证实，构成二聚体的单体直接具有强烈的相互作用，能够在串联质谱中产生共价键解离的子离子，而不是简单的单体解离。利用SORI CID还对二糖化合物的糖连接位点和糖苷键构型进行了区分研究。 论文的最后一部分研究了人工合成类肝素类化合物DHα、THα 和 THβ的结构表征，在极其温和的负离子模式电喷雾质谱条件下，类肝素化合物仍然容易发生多个SO3中性丢失。串联质谱中的子离子通过傅立叶变换离子回旋共振质谱高质量精度测量数据进行了确认。实验对研究类肝素类化合物的质谱表征提供了借鉴。

Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy

Lattice matched Ga_(1-x)In_xAs_ySb_(1-y) quaternary alloy films for thermophotovoltaic cells were successfully grown on n-type GaSb substrates by liquid phase epitaxy. Mirror-like surfaces for the epitaxial layers were achieved and evaluated by atomic force microscopy. The composition of the Ga_(1-x)In_xAs_ySb_(1-y) layer was characterized by energy dispersive X-ray analysis with the result that x = 0.2, y = 0.17. The absorption edges of the Ga_(1-x)In_xAs_ySb_(1-y) films were determined to be 2. 256μm at room temperature by Fourier transform infrared transmission spectrum analysis, corresponding to an energy gap of 0.55eV. Hall measurements show that the highest obtained electron mobility in the undoped p-type samples is 512cm2~/(V·s) and the carrier density is 6. 1×10~(16)cm~(-3) at room temperature. Finally, GaInAsSb based thermophotovoltaic cells in different structures with quantum efficiency values of around 60% were fabricated and the spectrum response characteristics of the cells are discussed.

传输斜移对同步并行光传输系统性能的影响

针对一个具体的链路模型,通过计算机仿真分析了传输斜移对同步并行光传输系统性能的影响.光纤中的信号分析在频域中通过快速傅立叶变换(fast fourier transform,FFT)进行.分别计算了单信道误码率以及没有传输斜移和有传输斜移时并行信道总的误码率.计算结果表明,在噪声不是影响系统性能的主要因素时,传输斜移是决定并行光传输系统最大同步传输速率和传输距离的一个重要因素.

Application of step-scan FTIR to the research of quantum cascade lasers

The principle of step-scan Fourier transform infrared （FTIR） spectroscopy is introduced. Double modulation step-scan FTIR technique is used to obtain the quantum cascade laser＇s stacked emission spectra in the time domain. Optical property and thermal accumulation of devices due to large drive current are analyzed.

Strong red light emission from silicon nanocrystals embedded in SIO2 matrix

In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.

The influence of oxygen content on photoluminescence from Er-doped SiOx

SiOx films with oxygen concentrations ranging 13-46 at.% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using: pure SiH4 and N2O mixture. Erbium was then implanted at an energy of 500 KeV with dose of 2x10(15) ions/cm(2). The samples were subsequently annealed in N-2 for 20 sec at temperatures of (300-950 degrees C). Room temperature (RT) photo-luminescence (PL) data were collected by Fourier Transform Infrared Spectroscopy (FTIS) with an argon laser at a wavelength of 514.5 nm and an output power from 5 to 2500 mw. The intense room-temperature luminescence was observed around 1.54 mu m. The luminescence intensity increases by 2 orders of magnitude as compared with that of Er-doped Czochralski (CZ) Si. We found that the Er3+ luminescence depends strongly on the SiOx microstructure. Our experiment also showed that the silicon grain radius decreased with increasing oxygen content and finally formed micro-crystalline silicon or nano-crystalline silicon. As a result, these silicon small particles could facilitate the energy transfer to Er3+ and thus enhanced the photoluminescence intensity.

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.