Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

Mn implanted GaAs by low energy ion beam deposition

High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved.

室温铁磁性半导体Mn_xGa_(1-x)Sb

采用离子注入、离子沉积及后期退火方法制备了稀磁半导体单晶Mn_xGa_(1-x)Sb，在室温下（300 K）获得了单晶的磁滞回线。用X射线衍射方法分析了铁磁性半导体单晶Mn_xGa_(1-x)Sb的结构，用电化学C-V法分析了单晶的载流子浓度分布。由X射线衍射得知，Mn_xGa_(1-x)Sb中Mn含量逐渐由近表面处的x = 0.09下降到晶片内部的x = 0。电化学C-V测得单晶的空穴浓度高达1 * 10~(21)cm~(-3)，表明Mn_xGa_(1-x)Sb单晶中大部分Mn原子占据Ga位，起受主作用。

微重力条件下开口矩形容器的小Pr热毛细对流

采用数值方法研究了微重力条件下开口矩形容器内小Prandtl数镓(Ga)熔体生长过程中定常热毛细对流，讨论了Re数、几何纵横比A和侧壁外加温差的相对高度H对熔体内温度场和流场分布的影响。计算结果表明，热毛细对流对熔体温度分布有明显的影响，从而影响着晶体生长过程。自由面两侧温度差很小(如0.1K)时，熔体内温度场将发生变化；当温度差增加即Re数增加时，热毛细对流加强，对流和扩散相互作用导致温度场分布更加不均匀。无论多小的H值，若自由面存在温差，都会驱动热毛细对流；随着H值增加，热毛细对流会扩展到整个熔区。几何纵横比A对熔体内温度场和流场也有影响，当A比较大时，在固/液界面附近扩散起主导作用。

低能离子束沉积制备GaAs:Gd的研究

对室温条件下用低能离子束沉积得到的 Ga As∶ Gd样品 ,借助 X射线衍射 (XRD)和高分辨 X射线衍射 (HR-XRD)进行了结构分析 ,结果表明没有出现新的衍射峰 ,并且摇摆曲线的形状与 Gd的注入计量密切相关 .运用 X光电子能谱仪对比分析了 Gd注入后 ,衬底中主要元素 Ga2 p和 As3d的化学位移 ,以及不同计量的样品中注入的Gd4 d芯能级束缚能的变化 ,并分析了铁磁性产生的可能原因 .

Population Characteristics of Largemouth Bass Associated with Changes in Abundance of Submersed Aquatic Vegetation in Lake Seminole, Georgia

Population characteristics of largemouth bass ( Micropterus salmoides L.) including growth, body condition (relative weight), survival, and egg production were examined in relation to abundance of submersed aquatic vegetation (SAV) coverage (primarily hydrilla [ Hydrilla verticillata L.f. Royle]) in three embayments of Lake Seminole, GA, and compared to a previous study conducted in 1998. (PDF has 8 pages.)

Laboratory Evaluation of Mefluidide Effects on Elongation of Hydrilla and Eurasian Watermilfoil

The potential of mefluidide (N-(2,4-dimethyl-5[[trifluromethyl) sulfonyl] amino] phenol) acetamide) to act as a submersed aquatic plant growth regulator was evaluated using a laboratory bioassay system. Main stem elongation of hydrilla (Hydrilla verticillata (L.f.) Royle) and Eurasian watermilfoil (Myriophyllum spicatum L.) was effectively reduced by mefluidide at low concentrations. The lowest effective concentration of mefluidide that reduced stem length in Eurasian watermilfoil (100 yg a.i./L) was 5 times lower than that for hydrilla (500 yg a.i./L). Short-term net photosynthetic rates of these plants were not affected by mefluidide at concentrations as high as 1000 yg a.i./L. The minimum exposure time required to maintain an inhibitory effect for at least 28 days at a concentration of 500 yg ai.i./L was 3 to 7 days for Eurasian watermilfoil and 7 to 14 days for hydrilla. The results suggest that mefluidide is a more effective growth regulator for Eurasian watermilfoil than hydrilla. Exogenously applied gibberellic acid (GA) did not completely overcome the inhibitory effect of mefluidide even when GA was added at a high concentration (10-5 M). In addition, the internodal lengths of stems treated with mefluidide were not reduced as they were when treated with gibberellin synthesis inhibitors. The reduction of main stem elongation by mefluidide appeared to be due to the inhibition of new cell and tissue development at the stem tip rather than from inhibition of GA biosynthesis.