Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at similar to 0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

n-type Ge-SiGe quantum cascade structure utilizing quantum wells for electrons in the L and Gamma valleys

In this letter, we propose an n-type vertical transition bound-to-continuum Ge-SiGe quantum cascade structure utilizing electronic quantum wells in the L and F valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. Under a bias of 80 kV/cm, the carriers in the lower level are extracted by miniband transport and L - Gamma tunneling into the subband in the Gamma well of the next period. And then the electrons are injected into the upper level by ultrafast intervalley scattering, which not only effectively increases the tunneling rate and suppresses the thermal backfilling of electrons, but also enhances the injection efficiency of the upper level. The performance of the laser is discussed.

Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering

The ZnO films were deposited on c-plane sapphire, Si (0 0 1) and MgAl2O4 (1 1 1) substrates in pure Ar ambient at different substrate temperatures ranging from 400 to 750 degrees C by radio frequency magnetron sputtering. X-ray diffraction, photoluminescence and Hall measurements were used to evaluate the growth temperature and the substrate effects on the properties of ZnO films. The results show that the crystalline quality of the ZnO films improves with increasing the temperature up to 600 degrees C, the crystallinity of the films is degraded as the growth temperature increasing further, and the ZnO film with the best crystalline quality is obtained on sapphire at 600 degrees C. The intensity of the photoluminescence and the electrical properties strongly depend on the crystalline quality of the ZnO films. The ZnO films with the better crystallinity have the stronger ultraviolet emission, the higher mobility and the lower residual carrier concentration. The effects of crystallinity on light emission and electrical properties, and the possible origin of the n-type conductivity of the undoped ZnO films are also discussed. (C) 2009 Elsevier B. V. All rights reserved.

The electronic structure of strained ZnO/MgxZn1-xO superlattices and the influence of polarization

Based on the effective-mass model, the lower energies of the electron and the hole of ZnO/MgxZn1-xO superlattices are calculated. Because of the mismatch of the lattice constant between the ZnO well and the MgxZn1-xO barrier, piezoelectric and spontaneous polarization exist in ZnO/MgxZn1-xO superlattices and a macroscopical internal electric held is found when well width L-w >4 nm and Mg concentration x > 0.2. The parameters of ZnO/MgxZn1-xO superlattices such as lattice constant, band offset, etc. are also proposed. Through calculations, we found the internal electric field can change the lowest energies of the electron and hole to 105.4 and 85.1 meV when well width L-w up to 70 angstrom, which will influence the electronic and optical properties of ZnO/MgxZn1-xO superlattices greatly, while the Rashba effect from the internal electric field is so small that it can be neglected. The ground state exciton energies with different Mg concentration x are also calculated by variational method, our results are very close to the experimental results when Mg concentration x <= 0.3. (C) 2008 Elsevier B.V. All rights reserved.

The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers

Two emission peaks were observed in the low temperature photoluminescence (LTPL) spectra of an InGaN/GaN multiple quantum well (MQW) structure before and after nanopillar fabrication. After nanopillar fabrication it is found that among the two peaks the longer wavelength peak exhibits a clear blue shift and has a much stronger enhancement in LTPL intensity than the shorter one. Combined with x-ray diffraction and spatially resolved cathodoluminescence analyses, the difference induced by nanopillar fabrication is ascribed to different strain relaxation states in the lower and upper quantum well layers. It is found that the lower QW layers of the as-grown MQW which causes the longer wavelength PL peak are more strained, while the upper ones are almost fully strain-relaxed. Therefore, the nanopillar fabrication induces much less strain relaxation in the upper part of the MQW than in the lower one.

QE and Suns-V-oc study on the epitaxial CSiTF solar cells

In order to clarify the major factors having confined the efficiencies of as-prepared crystalline silicon thin film (CSiTF) solar cells on the SSP (silicon sheets from powder) ribbons, QE (quantum efficiency) and Suns-V-oc study were performed on the epitaxial CSiTF solar cells fabricated on the SSP ribbons, the SSP ribbons after surface being zone melting recrystallized (ZMR) and single crystalline silicon (sc-Si) substrates. The results show that the epi-layers deposited on the SSP ribbons have rough surfaces, which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the SSP ribbons possess poor crystallographic quality, so the heavy grain boundary (GB) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared CSiTF solar cells suffer the worse spectra response at long-wavelength range. Nearly all the dark characteristic parameters of the CSiTF solar cells are far away from the ideal values. The performances of the CSiTF solar cells are especially affected by too high I-02 (the dark saturation current of space charge region) values and too low R-sh (parallel resistance) values. The higher 102 values are mainly caused by the heavy GB recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower R-sh values are attributed to the electrical leakage at the un-passivated PN junction or solar cell edges after the solar cells are cut by the laser scriber.

Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers

We have investigated the temperature and excitation power dependence of photoluminescence properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As quantum wells. The temperature evolutions of the lower-and higher-energy transition in the photoluminescence spectra have been observed. The striking result is that a higher-energy peak appears at 105 K and its relative intensity increases with temperature in the 105-291 K range. We demonstrate that the higher-energy peak corresponds to the excited-state transition involving the bound-electron state of quantum dots and the two-dimensional hole continuum of wetting layer. At higher temperature, the carrier transition associated with the wetting layer dominates the photoluminescence spectra. A thermalization model is given to explain the process of hole thermal transfer between wetting layer and quantum dots. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Study on the kinetics of hydrate formation in a bubble column

Gas hydrate formation experiments were performed using methane in the presence of tetrahydrofuran (THF) in aqueous solution in a transparent bubble column in which a single pipe or a sintered plate was used to produce bubbles. The mole fraction of THF in aqueous solution was fixed at 6%. The hydrate formation kinetic behaviors on the surface of the rising bubble, the mechanical stability of hydrate shell formed on the surface of the bubble, the interactions among the bubbles with hydrate shell were observed and investigated morphologically. The rise velocities of individual bubbles with hydrate shells of different thickness and the consumption rates of methane gas were measured. A kinetic model was developed to correlate the experimentally measured gas consumption rate data. It was found that the hydrate formation rate on the surface of the moving bubble was high, but the formed hydrate shell was not very easy to be broken up. The bubbles with hydrate shells tended to agglomerate rather than merge into bigger bubble. This kind of characteristic of hydrate shell hindered the further formation of hydrate and led to the lower consumption rate of methane. The consumption rate of methane was found to increase with the decrease of temperature or increase of pressure. The increase of gas flux led to a linear increase in consumption rate of methane. It was demonstrated that the developed kinetic model could be used to correlate the consumption rate satisfyingly.

PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER

Recently, we reported successful growth of high-quality GaAs/Si epilayers by using a very thin amorphous Si film as buffer layer. In this paper, the impurity properties of this kind of GaAs/Si epilayers have been studied by using PL spectrum, SIMS and Hall measurement. Compared to a typical PL spectrum of the GaAs/Si epilayers grown by conventional two-step method, a new peak was observed in our PL spectrum at the energy of 1.462 eV, which is assigned to the band-to-silicon acceptor recombination. The SIMS analysis indicates that the silicon concentration in this kind of GaAs/Si epilayers is about 10(18) cm(-3). But its carrier concentration (about 4 x 10(17) cm(-3)) is lower than the silicon concentration. The lower carrier concentration in this kind of GaAs/Si epilayer can be interpreted both as the result of higher compensation and as the result of the formation of the donor-defect complex. We also found that the high-quality and low-Si-concentration GaAs/Si epilayers can be regrown by using this kind of GaAs/Si epilayer as substrate. The FWHM of the X-ray (004) rocking curve from this regrowth GaAs epilayer is 118 '', it is much less than that of the first growth GaAs epilayer (160 '') and other reports for the GaAs/Si epilayer grown by using conventional two-step method (similar to 200 '').

The Effects of Roughness on Adhesion Hysteresis

Adhesion hysteresis is defined as the difference between the work needed to separate two surfaces and that originally gained on bringing them together. Adhesion hysteresis is a common phenomenon in most surface/interface interactions. This paper studies the effects of surface roughness on adhesion hysteresis. We assumed that the surface asperity height distribution is Gaussian. Numerical simulations based on Fuller's model showed that adhesion hysteresis depended upon a single dimensionless parameter, the adhesion parameter, which represents the statistical average of a competition between the compressive forces exerted by the higher asperities, which are trying to separate the surfaces, and the adhesion forces of the lower asperities which are trying to hold the surfaces together. (C) Koninklijke Brill NV, Leiden, 2010

The influence of fractionation on cell survival and premature differentiation after carbon ion irradiation

Carbon ion radiotherapy/Fractionated irradiation/R-BE/Premature terminal differentiation. To investigate the influence of fractionation on cell survival and radiation induced premature differentiation as markers for early and late effects after X-rays and carbon irradiation. Normal human fibroblasts NHDF, AG1522B and WI-38 were irradiated With 250 kV X-rays, or 266 MeV/u, 195 MeV/u and I I MeV/u carbon ions. Cytotoxicity was measured by a clonogenic survival assay or by determination of the differentiation pattern. Experiments with high-energy carbon ions show that fractionation induced repair effects are similar to photon irradiation. The RBE10 values for clonogenic survival are 1.3 and 1.6 for irradiation in one or two fractions for NHDF cells and around 1.2 for AG1522B cells regardless of the fractionation scheme. The RBE for a doubling of post mitotic fibroblasts (PMF) in the population is I for both single and two fractionated irradiation of NHDF cells. Using I I MeV/u carbon ions, no repair effect can be seen in WI-38 cells. The RBE10 for clonogenic survival is 3.2 for single irradiation and 4.9 for two fractionated irradiations. The RBE for a doubling of PMF is 3.1 and 5.0 for single and two fractionated irradiations, respectively. For both cell lines the effects of high-energy carbon ions representing the irradiation of the skin and the normal tissue in the entrance channel are similar to the effects of X-rays. The fractionation effects are maintained. For the lower energy, which is representative for the irradiation of the tumor region. RBE is enhanced for clonogenic survival as well as for premature terminal differentiation. Fractionation effects are not detectable. Consequently, the therapeutic ratio is significantly enhanced by fractionated irradiation with carbon ions.

Physical design of the new extraction system for SFC

The HIRFL (Heavy Ion Research Facility at Lanzhou) is a cyclotron complex. Its injector is a cector focusing cyclotron with K=69. Since the HIRFL started the operation in 1989, two bigger items of improvements have been finished, the species and intensity of the accelerated particles are increased obviously. But due to the lower extraction efficiency of the SFC, on one hand, a lot of beam lost, and on other hand, outgas from the surface of the electrostatic deflector is serious because of beam hitting. Even sometimes the vacuum press is destroyed. In the paper a new physical design is made to get an extraction system of the SFC with a higher efficiency.

Pd/sulfated alumina - a new effective catalyst for the selective catalytic reduction of NO with CH4

Sulfated alumina (SA) is firstly found to be an effective support for Pd catalyst used in the SCR of NO with methane. The sulfation is important to increase support's acidity which is essential for the reduction of NO over Pd catalysts. On consideration of the lower cost and easier availability of SA, we believe that SA is more promising to act as the commercial support for Pd catalyst used in the SCR of NO with methane.

The competition between the liquid-liquid dewetting and the liquid-solid dewetting

We investigate the dewetting behavior of the bilayer of air/PS/PMMA/silanized Si wafer and find the two competing dewetting pathways in the dewetting process. The upper layer dewets on the lower layer (dewetting pathway 1, the liquid-liquid dewetting) and the two layers rupture on the solid substrate (dewetting pathway 2, the liquid-solid dewetting). To the two competing dewetting pathways, the process of forming holes and the process of hole growth, influence their competing relation. In the process of forming holes, the time of forming holes is a main factor that influences their competing relation. During the process of hole growth, the dewetting velocity is a main factor that influences their competing relation.

Change of the dominant luminescent mechanism with increasing current density in molecularly doped organic light-emitting devices

We have fabricated and measured a series of electroluminescent devices with the structure of ITO/TPD/Eu(TTA)(3)phen (x):CBP/BCP/ ALQ/LiF/Al, where x is the weight percentage of Eu(TTA)3phen (from 0% to 6%). At very low current density, carrier trapping is the dominant luminescent mechanism and the 4% doped device shows the highest electroluminescence (EL) efficiency among all these devices. With increasing current density, Forster energy transfer participates in EL process. At the current density of 10.0 and 80.0mA/ cm(2), 2% and 3% doped devices show the highest EL efficiency, respectively. From analysis of the EL spectra and the EL efficiency-current density characteristics, we found that the EL efficiency is manipulated by Forster energy transfer efficiency at high current density. So we suggest that the dominant luminescent mechanism changes gradually from carrier trapping to Forster energy transfer with increasing current density. Moreover, the conversion of dominant EL mechanism was suspected to be partly responsible for the EL efficiency roll-off because of the lower EL quantum efficiency of Forster energy transfer compared with carrier trapping.