Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
Data(s) |
2000
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Resumo |
We have investigated the temperature and excitation power dependence of photoluminescence properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As quantum wells. The temperature evolutions of the lower-and higher-energy transition in the photoluminescence spectra have been observed. The striking result is that a higher-energy peak appears at 105 K and its relative intensity increases with temperature in the 105-291 K range. We demonstrate that the higher-energy peak corresponds to the excited-state transition involving the bound-electron state of quantum dots and the two-dimensional hole continuum of wetting layer. At higher temperature, the carrier transition associated with the wetting layer dominates the photoluminescence spectra. A thermalization model is given to explain the process of hole thermal transfer between wetting layer and quantum dots. (C) 2000 Published by Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Liu HY; Xu B; Gong Q; Ding D; Liu FQ; Chen YH; Jiang WH; Ye XL; Li YF; Sun ZZ; Zhang JF; Liang JB; Wang ZG .Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers ,JOURNAL OF CRYSTAL GROWTH,2000,210(4):451-457 |
Palavras-Chave | #半导体材料 #InAs quantum dots #molecular beam epitaxy #photoluminescence #LINE-SHAPE |
Tipo |
期刊论文 |