Concentration effect of Mn2+ on the photoluminescence of ZnS : Mn nanocrystals

Mn-doped ZnS nanocrystals of about 3 nm diameter were synthesized by a wet chemical method. X-ray diffraction (XRD) measurements showed that the nanocrystals have the structure of cubic zinc blende. The broadening of the XRD lines is indicative of nanomaterials. Room temperature photoluminescence (PL) spectrum of the undoped sample only exhibited a defected-related blue emission band. But for the doped samples, an orange emission from the Mn2+ T-4(1)-(6)A(1) transition was also observed, apart from the blue emission. The peak position (600 nm) of the Mn2+ emission was shifted to longer wavelength compared to that (584 nm) of bulk ZnS:Mn. With the increase of the Mn2+ concentration, the PL of ZnS:Mn was significantly enhanced. The concentration quenching effect was not observed in our experiments. Such PL phenomena were attributed to the absence of Mn2+ pairs in a single ZnS:Mn nanocrystal, considering the nonradiative energy transfer between Mn2+ ions based on the Poisson approximation. (c) 2005 Elsevier B.V. All rights reserved.

Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well

A self-consistent solution of conduction band profile and subband energies for AlxGa1-xN-GaN quantum well is presented by solving the Schrodinger and Poisson equations. A new method is introduced to deal with the accumulation of the immobile charges at the AlxGa1-xN-GaN interface caused by spontaneous and piezoelectric polarization in the process of solving the Poisson equation. The effect of spontaneous and piezoelectric polarization is taken into account in the calculation. It also includes the effect of exchange-correlation to the one electron potential on the Coulomb interaction. Our analysis is based on the one electron effective-mass approximation and charge conservation condition. Based on this model, the electron wave functions and the conduction band structure are derived. We calculate the intersubband transition wavelength lambda(21) for different Al molar fraction of barrier and thickness of well. The calculated result can fit to the experimental data well. The dependence of the absorption coefficient a on the well width and the doping density is also investigated theoretically. (C) 2004 American Vacuum Society.

Full counting statistics of transport through two-channel Coulomb blockade systems

A mesoscopic Coulomb blockade system with two transport channels is studied in terms of full counting statistics. It is found that the shot noise and skewness are crucially affected by the quantum mechanical interference. In particular, the super-Poisson behavior can be induced as a consequence of constructive interference, and can be understood by the formation of effective fast-and-slow transport channels. Dephasing and finite temperature effects are carried out together with physical interpretations.

Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers

Magneto-transport measurements have been carried out on a Si delta-doped In0.65Ga0.35As/In0.52Al0.48As metamorphic high-electron-mobility transistor with InP substrate in a temperature range between 1.5 and 60 K under magnetic field up to 13 T. We studied the Shubnikov-de Haas (SdH) effect and the Hall effect for the In0.65Ga0.35As/In0.52Al0.48As single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. We solve the Schrodinger-Kohn-Sham equation in conjunction with the Poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the Fermi energy. The calculational results are well consistent with the results of experiments. Both experimental and calculational results indicate that almost all of the delta-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60 K.

Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs

We have carried out a theoretical study of double-delta-doped InAlAs/InGaAs/InP high electron mobility transistor (HEMT) by means of the finite differential method. The electronic states in the quantum well of the HEMT are calculated self-consistently. Instead of boundary conditions, initial conditions are used to solve the Poisson equation. The concentration of two-dimensional electron gas (2DEG) and its distribution in the HEMT have been obtained. By changing the doping density of upper and lower impurity layers we find that the 2DEG concentration confined in the channel is greatly affected by these two doping layers. But the electrons depleted by the Schottky contact are hardly affected by the lower impurity layer. It is only related to the doping density of upper impurity layer. This means that we can deal with the doping concentrations of the two impurity layers and optimize them separately. Considering the sheet concentration and the mobility of the electrons in the channel, the optimized doping densities are found to be 5 x 10(12) and 3 x 10(12) cm(-2) for the upper and lower impurity layers, respectively, in the double-delta-doped InAlAs/InGaAs/InP HEMTs.

Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

The influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the Schrodinger and Poisson equations with both the strain and nonparabolicity effects being taken into account. The results show that, having little influence on the total two dimensional electron gas (2DEG) concentration in the channel, the HEMT's channel layer width has some influence on the electron mobility, with a channel as narrow as 100-130 angstrom being more beneficial. For the AlSb/InAs HEMT with a Te delta-doped layer, the 2DEG concentration as high as 9.1 X 10(12) cm(-2) can be achieved in the channel by enhancing the delta-doping concentration without the occurrence of the parallel conduction. When utilizing a Si delta-doped InAs layer as the electron-supplying layer of the AlSb/InAs HEMT, the effect of the InAs donor layer thickness is studied on the 2DEG concentration. To obtain a higher 2DEG concentration in the channel, it is necessary to use an InAs donor layer as thin as 4 monolayer. To test the validity of our calculation, we have compared our theoretical results (2DEG concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results.

无机材料的结构与物理性能：第一性原理计算

本论文的研究方向是通过密度泛函理论研究各种材料的物理化学性质。近年来相关理论和数值算法的飞速发展，使得基于密度泛函理论的第一性原理方法成为凝聚态物理、量子化学和材料科学中的常规计算研究手段。本论文对无机材料进行第一性原理研究，研究涉及材料物性包括几何构型、电子结构、磁性能、和力学性质等等。 第一章简要地介绍了密度泛函理论的基本框架和近年来的理论发展。密度泛函理论的发展以及寻找合适的交换相关能量泛函为主线。从最初的局域密度近似（LDA）、广义梯度近似（GGA）到现在的非局域泛函、自相互作用修正，多种泛函形式的出现使得密度泛函理论可以提供越来越精确的计算结果。除了改进交换相关泛函，近年来密度泛函理论向动力学平均场和含时理论等方面扩展也很活跃。这些扩展式的密度泛函理论的应用领域不断扩大。在本章的最后，我们介绍一些密度泛函理论的应用程序。 第二章我们通过第一性原理从头算系统的研究了5d过渡金属二硼化物TMB2 (TM = Hf, Ta, W, Re, Os and Ir, Pt)在假想的Pmmn空间群中的结合能、生成焓、力学常数和电子能带结构。我们的计算结果表明在力学常数和价电子浓度之间存在一种关系：即当价电子浓度在6.8到7.2之间时，体模量和剪切模量达到最大值。再者，这种力学常数与价电子浓度之间的关系可以通过电子能带结构分析，如费米面附近价电子的占据情况，决定了体系的结合能和力学性能。最大的体模量和剪切模量的获得归因于TM d-B p成键态的几乎完全占据和反键态的未占据。依据上述这种关系，我们预测了在正交结构OsB2合金化W和Re将比合金化Ir元素更容易和更硬。事实上，我们的进一步计算证实了我们的期望。 通过第一性原理计算研究了ReB2和WB2的结构、弹性力学，和电子性质。计算结果表明：ReB2的平衡态结构参数和报导的实验结构一致。在常温常压下，WB2在P63/mmc空间群比在P6/mmm更稳定。依据我们计算的多晶聚集体的体模量、剪切模量，ReB2和WB2可以被看作是具有前景的低压缩率和硬材料。再者，化合物的力学各项异性通过计算得到的弹性力学常数来详细的分析讨论。态密度和电子密度分析揭示过渡金属和硼原子之间的共价键是材料具有高的体模量、剪切模量和小的Poisson比率的原因。 第四章，采用WIEN2k程序包中的缀加平面波+局域轨道方法的第一性原理计算，研究了层状钙钛矿化合物Cs2AgF4的结构、电子结构和磁性等性质。我们的计算结果表明Cs2AgF4的基态为正交相，能量比四方相低。我们同时发现Cs2AgF4应该表现出一种强的二维铁磁性，铁磁层之间为弱的反铁磁性耦合，这一结果与实验观察相一致。更主要的是，通过分析态密度图和自旋电子密度等密度面的分析，可以清楚地看出体系中存在 和 轨道的反铁电弹性有序现象。 第五章中，采用WIEN2k程序包中的缀加平面波+局域轨道方法的第一性原理计算，研究了YBaFe2O5的晶体结构、电子和磁性等方面的物理性能，特别是有关电荷和轨道有序的情况。尽管总的3d电荷不均衡程度很小，以Fe2+ 和Fe3+阳离子t2g轨道占据数的差别所定义的轨道有序序参量相当大（0.73），无可非议的显示YBaFe2O5中存在电荷和轨道有序。O 2p和Fe eg轨道之间的强的杂化作用使得Fe2+ 和Fe3+阳离子之间总电荷差别几乎完全消失。此外，我们讨论了轨道有序和电荷有序以及磁有序之间的关系。dxz轨道有序决定了G型反铁磁性自旋有序的稳定性和电荷有序模式。

双δ掺杂In_(0.65)Ga_(0.35)As/In_(0.52)Al_(0.48)As赝型高迁移率晶体管材料子带电子特性研究

研究了基于InP基的In_(0.65)Ga_(0.35)As/In_(0.52)Al_(0.48)As赝型高迁移率晶体管材料中纵向磁电阻的Shubniko-de Haas (SdH)振荡效应和霍耳效应,通过对纵向磁电阻SdH振荡的快速傅里叶变换分析,获得了各子带电子的浓度,并因此求得了各子带能级相对于费米能级的位置.联立求解Schrodinger方程和Poisson方程,自洽计算了样品的导带形状、载流子浓度分布以及各子带能级和费米能级位置.理论计算和实验结果很好符合.实验和理论计算均表明,势垒层的掺杂电子几乎全部转移到了量子阱中,转移率在95%以上.

Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT

A two-dimensional quantum model based on the solution of Schrodinger and Poisson equations is first presented for In0.52Al0.48As/In0.53Ga0.47As/InP HEMT. According to the model, the two-dimensional distributions of electron density and transverse electric field in the channel of InAlAs/InGaAs HEMT are discussed.

Nanoadhesion of a Power-Law Graded Elastic Material

The Dugdale-Barenblatt model is used to analyze the adhesion of graded elastic materials at the nanoscale with Young's modulus E varying with depth z according to a power law E = E-0(z/c(0))(k) (0 < k < 1) while Poisson's ratio v remains a constant, where E-0 is a referenced Young's modulus, k is the gradient exponent and c(0) is a characteristic length describing the variation rate of Young's modulus. We show that, when the size of a rigid punch becomes smaller than a critical length, the adhesive interface between the punch and the graded material detaches due to rupture with uniform stresses, rather than by crack propagation with stress concentration. The critical length can be reduced to the one for isotropic elastic materials only if the gradient exponent k vanishes.

An augmented method for free boundary problems with moving contact lines

An augmented immersed interface method (IIM) is proposed for simulating one-phase moving contact line problems in which a liquid drop spreads or recoils on a solid substrate. While the present two-dimensional mathematical model is a free boundary problem, in our new numerical method, the fluid domain enclosed by the free boundary is embedded into a rectangular one so that the problem can be solved by a regular Cartesian grid method. We introduce an augmented variable along the free boundary so that the stress balancing boundary condition is satisfied. A hybrid time discretization is used in the projection method for better stability. The resultant Helmholtz/Poisson equations with interfaces then are solved by the IIM in an efficient way. Several numerical tests including an accuracy check, and the spreading and recoiling processes of a liquid drop are presented in detail. (C) 2010 Elsevier Ltd. All rights reserved.

贡嘎山麦吊杉(Plcea brachytyly)群落的结构研究

群落结构的确定是群落研究的基础。本文立足于个体、种群、群落三级水平，从空间和时间两种概念出发，对贡嘎山麦吊杉(Picea brachytyla)群落的结构进行了研究。经初步统计，在麦吊杉林分布的主要地段共有维管束植物93科、263属、约560种，其中种子植物71科、220属、479种。通过种子植物区系地理成份的分析表明，麦吊杉群落的区系组成具有区系成分复杂、特有现象明显和成分古老的特点。在生活型组成上，麦吊杉群落的高位芽植物所占比例最大，其中小高位芽植物最多，而在叶级谱中小叶类型占有较明显的优势。通过种—面积曲线和重要值—面积曲线两种方法求得的麦吊杉群落的最小面积在800-900平方米之间，实际应用时可选用1000平方米的保守面积。在物种的综合特征分析中，群落表现出优势种明显的特征，而存在度II占有最大的比例。物种多样性的研究表明，贡嘎山麦吊杉群落的Shannon-Wiener指数在2.33-3.26之间，Simpson指数在0.43-0.70之间，种间相遇(PIE)在0.42-0.79之间，而以Shannon-Wiener指数为基础的均匀度在34.45%-62.90%之间。麦吊杉群落的垂直结构较为复杂，分层明显。一般可划分出乔木层、灌木层、草本层和活地被层四个基本层次，乔木层通常还可划分为2-3个亚层，由高海拔至低海拔成层现象有逐渐复杂的趋势。构成麦吊杉群落的层片类型较多，其中以常绿针叶大高位芽植物为其建群层片。麦吊杉林中的层外植物较丰富，种子植物、蕨类植物、以及苔藓植物和地衣植物皆可构成其空中层片，其中苔藓植物生长繁茂，反映出群落结构的完整性。麦吊杉群落结构的水平分化较明显，经研究，其密度值在0.32-0.41之间，平均距离在1.56-1.41之间。应用Raunkiaer的频度指数方法对整个麦吊杉群落的种群频度进行调查后表明，其频度分布情况与Raunkiaer的频度定律基本上是符合的，即A>B> CPoisson分布外，其余优势种多呈集群分布。在种间联结测定时，本文选用了联结系数方法对62种乔木和60种灌木的联结特征进行了测定，结果表明，该群落可以细划为四个结构组分，各组分都有其不同的种群生态组合。本文以立木级结构代替种群年龄结构，对麦吊杉种群的动态进行了分析，结合各种群存活曲线的分析，表明麦吊杉种群正界于相对稳定与衰退时期，由于补充率小于死亡率，衰退的趋势已明显表现出来。本文还从区系成分、生活型组成、生境特点、层片结构、结构分化等方面对麦吊杉群落的特点进行了分析和讨论，并对麦吊杉种群分布格局的成因进行了探讨。

ECR离子源六极永磁体的设计研究

分别从材料、结构、尺寸等方面全面地研究了Halbach结构六极永磁铁的设计方法 .针对个别磁块可能存在的退磁问题给出了相应的解决方案 .通过优化结构 ,使六极磁铁在离子源等离子体弧腔内壁产生的磁场达到最大 .用POISSON ,PERMAG ,TOSCA等多个磁场模拟程序计算模拟了六极磁场的大小与分布 ,并给出了一些相应的曲线

电子束在弯曲螺线管中的运动

为研究 HIRFL-CSR电子冷却装置中电子束穿过电子冷却装置中弯曲螺线管后电子横向能量的变化 ,用 Poisson程序计算出弯曲螺线管的磁场分布 ,考虑了空间电荷效应 ,用数值方法模拟计算了电子在弯曲螺线管中的运动情况 ,得到了电子束横向能量变化最小时磁场各分量与电子束能量和弯曲螺线管几何尺寸之间的关系 ,并获得了电子束横向能量在束流截面的空间分布

Modelling raindrop impact and splash erosion processes within a spatial cell: a stochastic approach

A new approach is proposed to simulate splash erosion on local soil surfaces. Without the effect of wind and other raindrops, the impact of free-falling raindrops was considered as an independent event from the stochastic viewpoint. The erosivity of a single raindrop depending on its kinetic energy was computed by an empirical relationship in which the kinetic energy was expressed as a power function of the equivalent diameter of the raindrop. An empirical linear function combining the kinetic energy and soil shear strength was used to estimate the impacted amount of soil particles by a single raindrop. Considering an ideal local soil surface with size of I m x I m, the expected number of received free-failing raindrops with different diameters per unit time was described by the combination of the raindrop size distribution function and the terminal velocity of raindrops. The total splash amount was seen as the sum of the impact amount by all raindrops in the rainfall event. The total splash amount per unit time was subdivided into three different components, including net splash amount, single impact amount and re-detachment amount. The re-detachment amount was obtained by a spatial geometric probability derived using the Poisson function in which overlapped impacted areas were considered. The net splash amount was defined as the mass of soil particles collected outside the splash dish. It was estimated by another spatial geometric probability in which the average splashed distance related to the median grain size of soil and effects of other impacted soil particles and other free-falling raindrops were considered. Splash experiments in artificial rainfall were carried out to validate the availability and accuracy of the model. Our simulated results suggested that the net splash amount and re-detachment amount were small parts of the total splash amount. Their proportions were 0.15% and 2.6%, respectively. The comparison of simulated data with measured data showed that this model could be applied to simulate the soil-splash process successfully and needed information of the rainfall intensity and original soil properties including initial bulk intensity, water content, median grain size and some empirical constants related to the soil surface shear strength, the raindrop size distribution function and the average splashed distance. Copyright (c) 2007 John Wiley & Sons, Ltd.