Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT
| Data(s) |
1997
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|---|---|
| Resumo |
A two-dimensional quantum model based on the solution of Schrodinger and Poisson equations is first presented for In0.52Al0.48As/In0.53Ga0.47As/InP HEMT. According to the model, the two-dimensional distributions of electron density and transverse electric field in the channel of InAlAs/InGaAs HEMT are discussed. A two-dimensional quantum model based on the solution of Schrodinger and Poisson equations is first presented for In0.52Al0.48As/In0.53Ga0.47As/InP HEMT. According to the model, the two-dimensional distributions of electron density and transverse electric field in the channel of InAlAs/InGaAs HEMT are discussed. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:15Z (GMT). No. of bitstreams: 1 3023.pdf: 216975 bytes, checksum: 68b2878375b67a88ef0ab224f511cbc4 (MD5) Previous issue date: 1997 IEEE Electron Devices Soc.; City Univ Hong Kong, Dept Electr Engn. Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China IEEE Electron Devices Soc.; City Univ Hong Kong, Dept Electr Engn. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Zhang XH; Yang YF; Wang ZG .Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT .见：IEEE .1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS,345 E 47TH ST, NEW YORK, NY 10017 USA ,1997,114-116 |
| Palavras-Chave | #半导体物理 |
| Tipo |
会议论文 |
