Segregation of particles and its influence on the morphology of the eutectic silicon phase in Al-7 wt.% Si alloys

A new modification phenomenon is reported for Al-Si alloys, where the Al-Si eutectic is refined by segregated TiB2 particles. The TiB2 particles are pushed to the Al-Si phase boundary during solidification of the eutectic and it is believed that at high concentrations the TiB2 particles restrict solute redistribution causing refinement of the Si. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Eutectic grain size and strontium concentration in hypoeutectic aluminium-silicon alloys

Recently it has been shown that modification with strontium causes an increase in the size of eutectic grains. The eutectic grain size increases because there are fewer nucleation events, possibly due to the poisoning of phosphorus-based nuclei that are active in the unmodified alloy. The current paper investigates the effect of strontium concentration on the eutectic grain size. In the aluminium-10 wt.% silicon alloy used in this research, for fixed casting conditions, the eutectic grain size increases as the strontium concentration increases up to approximately 150ppm, beyond which the grain size is relatively stable. This critical strontium concentration is likely to differ depending on the composition of the base alloy, including the concentration of minor elements and impurities. It is concluded that processing and in-service properties of strontium modified aluminium-silicon castings are likely to be more stable if a minimum critical strontium concentration is exceeded. If operating below this critical strontium concentration exceptional control over composition and casting conditions is required. (c) 2005 Elsevier B.V. All rights reserved.

Numerical method for determination of the NMR frequency of the single-qubit operation in a silicon-based solid-state quantum computer

A numerical method is introduced to determine the nuclear magnetic resonance frequency of a donor (P-31) doped inside a silicon substrate under the influence of an applied electric field. This phosphorus donor has been suggested for operation as a qubit for the realization of a solid-state scalable quantum computer. The operation of the qubit is achieved by a combination of the rotation of the phosphorus nuclear spin through a globally applied magnetic field and the selection of the phosphorus nucleus through a locally applied electric field. To realize the selection function, it is required to know the relationship between the applied electric field and the change of the nuclear magnetic resonance frequency of phosphorus. In this study, based on the wave functions obtained by the effective-mass theory, we introduce an empirical correction factor to the wave functions at the donor nucleus. Using the corrected wave functions, we formulate a first-order perturbation theory for the perturbed system under the influence of an electric field. In order to calculate the potential distributions inside the silicon and the silicon dioxide layers due to the applied electric field, we use the multilayered Green's functions and solve an integral equation by the moment method. This enables us to consider more realistic, arbitrary shape, and three-dimensional qubit structures. With the calculation of the potential distributions, we have investigated the effects of the thicknesses of silicon and silicon dioxide layers, the relative position of the donor, and the applied electric field on the nuclear magnetic resonance frequency of the donor.

Characteristics of low temperature PECVD silicon nitride for MEMS structural materials

Materials and mechanical characteristics of the low temperature PECVD silicon nitrides have been investigated using various analytical and testing techniques. TEM and SEM examinations reveal that there is no distinct microstructural difference existing between the films deposited under different conditions. However, their mechanical properties determined by nanoindentation indicate otherwise. The variations in mechanical properties with deposition conditions are found to be strongly correlated to the change in silicon-to-nitrogen ratio in the film.

Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films

The effect of deposition conditions on characteristic mechanical properties - elastic modulus and hardness - of low-temperature PECVD silicon nitrides is investigated using nanoindentation. lt is found that increase in substrate temperature, increase in plasma power and decrease in chamber gas pressure all result in increases in elastic modulus and hardness. Strong correlations between the mechanical properties and film density are demonstrated. The silicon nitride density in turn is shown to be related to the chemical composition of the films, particularly the silicon/nitrogen ratio. (c) 2006 Elsevier B.V. All rights reserved.

Crystallography of carbide-free bainite in a hard bainitic steel

The convergent beam Kikuchi line diffraction technique has been used to accurately determine the orientation relationships between bainitic ferrite and retained austenite in a hard bainitic steel. A reproducible orientation relationship has been uniquely observed for both the upper and lower bainite. It is [GRAPHICS] However, the habit plane of upper bainite is different from that of lower bainite. The former has habit plane that is either within 5 degrees of (221)(A) or of (259)(A). The latter only corresponds with a habit plane that is within 5 degrees of (259)(A). The determined orientation relationship is completely consistent with reported results determined using the same technique with an accuracy of +/- 0.5 degrees in lath martensite in an Fe-20 wt.% Ni-6 wt.% Mn alloy and in a low carbon low alloy steel. It also agrees well with the orientation relationship between granular bainite and austenite in an Fe-19 wt.% Ni-3.5 wt.% Mn-0.15 wt.% C steel. Hence it is believed that, at least from a crystallographic point view, the bainite transformation has the characteristics of martensitic transformation. (c) 2006 Elsevier B.V. All rights reserved.

Effect of microstructure on material removal mechanisms in nano/micro grinding of tungsten carbide mould inserts

Nano/micro grinding of tungsten carbide (WC) mould inserts was performed. A form accuracy of 〜200nm (in PV) and a surface roughness of 〜7nm were achieved. Nanoindentation revealed that small chipping or cracking occurred even at a penetration depth of 38nm, which could hinder the further improvement of surface quality during grinding. It was found that when grinding was conducted at nanometric scale, the microstructure of the work material and the morphology of the WC grains should be taken into account to enable a fully ductile removal. Copyright 2005 by the Japan Society of Mechanical Engineers

Hopping transport on a fractal: ac conductivity of porous silicon

We have measured the frequency dependence of the conductivity and the dielectric constant of various samples of porous Si in the regime 1 Hz-100 kHz at different temperatures. The conductivity data exhibit a strong frequency dependence. When normalized to the dc conductivity, our data obey a universal scaling law, with a well-defined crossover, in which the real part of the conductivity sigma' changes from an sqrt(omega) dependence to being proportional to omega. We explain this in terms of activated hopping in a fractal network. The low-frequency regime is governed by the fractal properties of porous Si, whereas the high-frequency dispersion comes from a broad distribution of activation energies. Calculations using the effective-medium approximation for activated hopping on a percolating lattice give fair agreement with the data.

A novel silicon membrane-based biosensing platform using distributive sensing strategy and artificial neural networks for feature analysis

A novel biosensing system based on a micromachined rectangular silicon membrane is proposed and investigated in this paper. A distributive sensing scheme is designed to monitor the dynamics of the sensing structure. An artificial neural network is used to process the measured data and to identify cell presence and density. Without specifying any particular bio-application, the investigation is mainly concentrated on the performance testing of this kind of biosensor as a general biosensing platform. The biosensing experiments on the microfabricated membranes involve seeding different cell densities onto the sensing surface of membrane, and measuring the corresponding dynamics information of each tested silicon membrane in the form of a series of frequency response functions (FRFs). All of those experiments are carried out in cell culture medium to simulate a practical working environment. The EA.hy 926 endothelial cell lines are chosen in this paper for the bio-experiments. The EA.hy 926 endothelial cell lines represent a particular class of biological particles that have irregular shapes, non-uniform density and uncertain growth behaviour, which are difficult to monitor using the traditional biosensors. The final predicted results reveal that the methodology of a neural-network based algorithm to perform the feature identification of cells from distributive sensory measurement has great potential in biosensing applications.