Characteristics of low temperature PECVD silicon nitride for MEMS structural materials


Autoria(s): Huang, H.; Suvorova, A.; Winchester, K. J.; Dell, J. M.; Faraone, L.
Contribuinte(s)

D. Spanjaard

Data(s)

30/10/2006

Resumo

Materials and mechanical characteristics of the low temperature PECVD silicon nitrides have been investigated using various analytical and testing techniques. TEM and SEM examinations reveal that there is no distinct microstructural difference existing between the films deposited under different conditions. However, their mechanical properties determined by nanoindentation indicate otherwise. The variations in mechanical properties with deposition conditions are found to be strongly correlated to the change in silicon-to-nitrogen ratio in the film.

Identificador

http://espace.library.uq.edu.au/view/UQ:82112

Idioma(s)

eng

Publicador

World Scientific Publishing Co. Pty. Ltd

Palavras-Chave #Physics, Applied #C1 #291804 Nanotechnology #671499 Instrumentation not elsewhere classified
Tipo

Journal Article