Electronic structure and optical properties of quantum rods with wurtzite structure

The Hamiltonian of the wurtzite quantum rods with an ellipsoidal boundary is given after a coordinate transformation. The energies, wave functions, and transition possibilities are obtained as functions of the aspect ratio e with the same method we used on spherical dots. With an overall consideration of both the transition matrix element and the Boltzmann distribution we explained why the polarization factor increases with increasing e and approaches a saturation value, which tallies quite well with the experimental result. When e increases more and more S-z states are mixed into the ground, second, and third states of J(z)=1/2, resulting in an increase of the emission of z polarization. It is just the linear terms of the momentum operator in the hole Hamiltonian that cause the mixing of S and P states in the hole ground state. The effects of the crystal field splitting energy, temperature, and transverse radius to the polarization are also considered. We also calculated the band gap variation with the size and shape of the quantum rods.

Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

The influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the Schrodinger and Poisson equations with both the strain and nonparabolicity effects being taken into account. The results show that, having little influence on the total two dimensional electron gas (2DEG) concentration in the channel, the HEMT's channel layer width has some influence on the electron mobility, with a channel as narrow as 100-130 angstrom being more beneficial. For the AlSb/InAs HEMT with a Te delta-doped layer, the 2DEG concentration as high as 9.1 X 10(12) cm(-2) can be achieved in the channel by enhancing the delta-doping concentration without the occurrence of the parallel conduction. When utilizing a Si delta-doped InAs layer as the electron-supplying layer of the AlSb/InAs HEMT, the effect of the InAs donor layer thickness is studied on the 2DEG concentration. To obtain a higher 2DEG concentration in the channel, it is necessary to use an InAs donor layer as thin as 4 monolayer. To test the validity of our calculation, we have compared our theoretical results (2DEG concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results.

多相聚合物体系相分离动力学的理论和模拟

本文提出了将自洽场理论与多相流格子Boltzmann方法相结合的模型，并从该模型出发推导出了描述动量守恒的Navier-Stokes方程和扩散方程，验证了模型理论上的正确性。应用此模型，对聚合物的相分离过程进行了模拟。 首先证实了本模型最终能够得到正确的热力学平衡结果。对于高分子共混物和嵌段共聚物相分离的动力学过程。在分相各个阶段，对高分子共混物和嵌段共聚物都进行了验证。 其次，应用所提出的格子Boltzmann模型，分别对二元聚合物共混物和二嵌段共聚物的相分离后期相区增长过程进行了研究。 最后，通过模型的进一步扩展，实现了对具有复杂结构的嵌段共聚物和复杂共混物的模拟。

无机材料的结构与物理性能：第一性原理计算

本论文的研究方向是通过密度泛函理论研究各种材料的物理化学性质。近年来相关理论和数值算法的飞速发展，使得基于密度泛函理论的第一性原理方法成为凝聚态物理、量子化学和材料科学中的常规计算研究手段。本论文对无机材料进行第一性原理研究，研究涉及材料物性包括几何构型、电子结构、磁性能、和力学性质等等。 第一章简要地介绍了密度泛函理论的基本框架和近年来的理论发展。密度泛函理论的发展以及寻找合适的交换相关能量泛函为主线。从最初的局域密度近似（LDA）、广义梯度近似（GGA）到现在的非局域泛函、自相互作用修正，多种泛函形式的出现使得密度泛函理论可以提供越来越精确的计算结果。除了改进交换相关泛函，近年来密度泛函理论向动力学平均场和含时理论等方面扩展也很活跃。这些扩展式的密度泛函理论的应用领域不断扩大。在本章的最后，我们介绍一些密度泛函理论的应用程序。 第二章我们通过第一性原理从头算系统的研究了5d过渡金属二硼化物TMB2 (TM = Hf, Ta, W, Re, Os and Ir, Pt)在假想的Pmmn空间群中的结合能、生成焓、力学常数和电子能带结构。我们的计算结果表明在力学常数和价电子浓度之间存在一种关系：即当价电子浓度在6.8到7.2之间时，体模量和剪切模量达到最大值。再者，这种力学常数与价电子浓度之间的关系可以通过电子能带结构分析，如费米面附近价电子的占据情况，决定了体系的结合能和力学性能。最大的体模量和剪切模量的获得归因于TM d-B p成键态的几乎完全占据和反键态的未占据。依据上述这种关系，我们预测了在正交结构OsB2合金化W和Re将比合金化Ir元素更容易和更硬。事实上，我们的进一步计算证实了我们的期望。 通过第一性原理计算研究了ReB2和WB2的结构、弹性力学，和电子性质。计算结果表明：ReB2的平衡态结构参数和报导的实验结构一致。在常温常压下，WB2在P63/mmc空间群比在P6/mmm更稳定。依据我们计算的多晶聚集体的体模量、剪切模量，ReB2和WB2可以被看作是具有前景的低压缩率和硬材料。再者，化合物的力学各项异性通过计算得到的弹性力学常数来详细的分析讨论。态密度和电子密度分析揭示过渡金属和硼原子之间的共价键是材料具有高的体模量、剪切模量和小的Poisson比率的原因。 第四章，采用WIEN2k程序包中的缀加平面波+局域轨道方法的第一性原理计算，研究了层状钙钛矿化合物Cs2AgF4的结构、电子结构和磁性等性质。我们的计算结果表明Cs2AgF4的基态为正交相，能量比四方相低。我们同时发现Cs2AgF4应该表现出一种强的二维铁磁性，铁磁层之间为弱的反铁磁性耦合，这一结果与实验观察相一致。更主要的是，通过分析态密度图和自旋电子密度等密度面的分析，可以清楚地看出体系中存在 和 轨道的反铁电弹性有序现象。 第五章中，采用WIEN2k程序包中的缀加平面波+局域轨道方法的第一性原理计算，研究了YBaFe2O5的晶体结构、电子和磁性等方面的物理性能，特别是有关电荷和轨道有序的情况。尽管总的3d电荷不均衡程度很小，以Fe2+ 和Fe3+阳离子t2g轨道占据数的差别所定义的轨道有序序参量相当大（0.73），无可非议的显示YBaFe2O5中存在电荷和轨道有序。O 2p和Fe eg轨道之间的强的杂化作用使得Fe2+ 和Fe3+阳离子之间总电荷差别几乎完全消失。此外，我们讨论了轨道有序和电荷有序以及磁有序之间的关系。dxz轨道有序决定了G型反铁磁性自旋有序的稳定性和电荷有序模式。

双δ掺杂In_(0.65)Ga_(0.35)As/In_(0.52)Al_(0.48)As赝型高迁移率晶体管材料子带电子特性研究

研究了基于InP基的In_(0.65)Ga_(0.35)As/In_(0.52)Al_(0.48)As赝型高迁移率晶体管材料中纵向磁电阻的Shubniko-de Haas (SdH)振荡效应和霍耳效应,通过对纵向磁电阻SdH振荡的快速傅里叶变换分析,获得了各子带电子的浓度,并因此求得了各子带能级相对于费米能级的位置.联立求解Schrodinger方程和Poisson方程,自洽计算了样品的导带形状、载流子浓度分布以及各子带能级和费米能级位置.理论计算和实验结果很好符合.实验和理论计算均表明,势垒层的掺杂电子几乎全部转移到了量子阱中,转移率在95%以上.

Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT

A two-dimensional quantum model based on the solution of Schrodinger and Poisson equations is first presented for In0.52Al0.48As/In0.53Ga0.47As/InP HEMT. According to the model, the two-dimensional distributions of electron density and transverse electric field in the channel of InAlAs/InGaAs HEMT are discussed.

Nanoadhesion of a Power-Law Graded Elastic Material

The Dugdale-Barenblatt model is used to analyze the adhesion of graded elastic materials at the nanoscale with Young's modulus E varying with depth z according to a power law E = E-0(z/c(0))(k) (0 < k < 1) while Poisson's ratio v remains a constant, where E-0 is a referenced Young's modulus, k is the gradient exponent and c(0) is a characteristic length describing the variation rate of Young's modulus. We show that, when the size of a rigid punch becomes smaller than a critical length, the adhesive interface between the punch and the graded material detaches due to rupture with uniform stresses, rather than by crack propagation with stress concentration. The critical length can be reduced to the one for isotropic elastic materials only if the gradient exponent k vanishes.

An augmented method for free boundary problems with moving contact lines

An augmented immersed interface method (IIM) is proposed for simulating one-phase moving contact line problems in which a liquid drop spreads or recoils on a solid substrate. While the present two-dimensional mathematical model is a free boundary problem, in our new numerical method, the fluid domain enclosed by the free boundary is embedded into a rectangular one so that the problem can be solved by a regular Cartesian grid method. We introduce an augmented variable along the free boundary so that the stress balancing boundary condition is satisfied. A hybrid time discretization is used in the projection method for better stability. The resultant Helmholtz/Poisson equations with interfaces then are solved by the IIM in an efficient way. Several numerical tests including an accuracy check, and the spreading and recoiling processes of a liquid drop are presented in detail. (C) 2010 Elsevier Ltd. All rights reserved.

对LVDSMC方法的改进(英文)

最近,Homolle和Hadjiconstantinu提出了新的粒子模拟方法———LVDSMC方法[1],该方法采用了减少方差的思想从而提高了低速流动问题中的计算效率。本文针对LVDSMC方法提出两点改进:第一,除了方法中原来已采用的偏差粒子,在计算近自由分子流问题时建议额外地采用一些辅助粒子,从而可以约束计算过程中原始算法在生成偏差粒子时计算误差的累积效应;第二,提出一个可选的用于计算潜在Maxwell Boltzmann分布函数中的速度参数的增量,从而使得表面的应力及热流的计算变得简单。

Analysis for temperature and pressure fields in process of hydrate dissociation by depressurization

An improved axisymmetric mathematic modeling is proposed for the process of hydrate dissociation by depressurization around vertical well. To reckon in the effect of latent heat of gas hydrate at the decomposition front, the energy balance equation is employed. The semi-analytic solutions for temperature and pressure fields are obtained by using Boltzmann-transformation. The location of decomposition front is determined by solving initial value problem for system of ordinary differential equations. The distributions of pressure and temperature along horizontal radiate in the reservoir are calculated. The numeric results indicate that the moving speed of decomposition front is sensitively dependent on the well pressure and the sediment permeability. Copyright (C) 2010 John Wiley & Sons, Ltd.

贡嘎山麦吊杉(Plcea brachytyly)群落的结构研究

群落结构的确定是群落研究的基础。本文立足于个体、种群、群落三级水平，从空间和时间两种概念出发，对贡嘎山麦吊杉(Picea brachytyla)群落的结构进行了研究。经初步统计，在麦吊杉林分布的主要地段共有维管束植物93科、263属、约560种，其中种子植物71科、220属、479种。通过种子植物区系地理成份的分析表明，麦吊杉群落的区系组成具有区系成分复杂、特有现象明显和成分古老的特点。在生活型组成上，麦吊杉群落的高位芽植物所占比例最大，其中小高位芽植物最多，而在叶级谱中小叶类型占有较明显的优势。通过种—面积曲线和重要值—面积曲线两种方法求得的麦吊杉群落的最小面积在800-900平方米之间，实际应用时可选用1000平方米的保守面积。在物种的综合特征分析中，群落表现出优势种明显的特征，而存在度II占有最大的比例。物种多样性的研究表明，贡嘎山麦吊杉群落的Shannon-Wiener指数在2.33-3.26之间，Simpson指数在0.43-0.70之间，种间相遇(PIE)在0.42-0.79之间，而以Shannon-Wiener指数为基础的均匀度在34.45%-62.90%之间。麦吊杉群落的垂直结构较为复杂，分层明显。一般可划分出乔木层、灌木层、草本层和活地被层四个基本层次，乔木层通常还可划分为2-3个亚层，由高海拔至低海拔成层现象有逐渐复杂的趋势。构成麦吊杉群落的层片类型较多，其中以常绿针叶大高位芽植物为其建群层片。麦吊杉林中的层外植物较丰富，种子植物、蕨类植物、以及苔藓植物和地衣植物皆可构成其空中层片，其中苔藓植物生长繁茂，反映出群落结构的完整性。麦吊杉群落结构的水平分化较明显，经研究，其密度值在0.32-0.41之间，平均距离在1.56-1.41之间。应用Raunkiaer的频度指数方法对整个麦吊杉群落的种群频度进行调查后表明，其频度分布情况与Raunkiaer的频度定律基本上是符合的，即A>B> C

丰质子核反应中轻带电粒子发射的同位旋效应

采用同位旋相关的Boltzmann-Langevin方程计算了核素12—15N和17—20Ne反应中轻带电粒子发射的同位旋效应。12—15N与28Si靶的反应结果显示轻带电粒子的产生截面有明显的同位旋效应,12N的轻带电粒子产生截面突然增大,与实验得出的结论相同,由此检验了所采用的计算方法的可行性。同时还计算了17—20Ne与9Be靶的反应,发现17Ne的轻带电粒子产生截面也是突然增大,并且其质子分布有较大的弥散,据此认为17Ne可能具有晕结构。

轻丰中子核反应中子集团产生截面的理论研究

采用Boltzmann-Langevin方程研究了能量为35MeV／u的14Be,8He,6He,11Li,17B,11Be,19C与 12C靶的反应,计算了产生中子集团的截面,发现14Be与12C靶反应产生4n的截面与实验值符合得很好．通过这几个入射核与12C靶形成中子集团截面的对比,发现核的晕中子越多产生中子集团的截面越大,晕中子数相同时,质量数越大产生中子集团的截面越大．中子集团可能主要来自晕核子．