Deep centers investigations of P-HEMT functional materials of ultra-high-speed microstructures grown by MBE

The deep centers of high electron mobility transistor (HEMT) and pseudomorphic-HEMT (P-HEMT) functional materials of ultra-high-speed microstructures grown by MBE are investigated using deep level transient spectroscopy (DLTS) technique. DLTS spectra demonstrate that midgap states, having larger concentrations and capture cross sections, are measured in n-AlGaAs layers of HEMT and P-HEMT structures. These states may correlate strongly with oxygen content of n-AlGaAs layer. At the same time, one can observe that the movement of DX center is related to silicon impurity that is induced by the strain in AlGaAs layer of the mismatched AlGaAs/InGaAs/GaAs system of P-HEMT structure. The experimental results also show that DLTS technique may be a tool of optimization design of the practical devices.

Growth and transport properties of InAs thin films on GaAs

High-quality InAs epitaxial layers have been grown on (1 0 0) oriented semi-insulating GaAs substrates by MBE. The transport properties of largely lattice mismatched InAs/GaAs heterojunctions have been investigated by Hall effect measurements down to 10 K. In spite of a high dislocation density at the heterointerface, very high electron mobilities are obtained in the InAs thin films. By doping Si into the layer far from the InAs/GaAs interface, we found that the doped samples have higher electron mobility than that of the undoped samples with the same thickness. The mobility demonstrates a pronounced minimum around 300 K for the undoped sample. But for Si-doped samples, no pronounced minimum has been found. Such abnormal behaviours are explained by the parallel conduction from the quasi-bulk carriers and interface carriers. These high-mobility InAs thin films are found to be suitable materials for making Hall elements. (C) 1998 Elsevier Science B.V. All rights reserved.

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N-(Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

HIGH-RESOLUTION DLTS AND ITS APPLICATION TO LATTICE-MISMATCH-INDUCED DEEP LEVELS IN INGAP

A new method of differentiating the deep level transient spectroscopy (DLTS) signal is used to increase the resolution of conventional DLTS. Using this method, more than one single deep level with small differences in activation energy or capture cross section, which are often hard to determine by conventional DLTS, can be distinguished. A series of lattice-mismatched InxGa1-xP samples are measured by improved DLTS to determine accurately the activation energy of a lattice-mismatch-induced deep level. This level cannot be clearly determined using conventional DLTS because the two signals partly overlap each other. Both the signals are thought to originate from a phosophorus vacancy and lattice-mismatch-induced defect.

STUDY ON PREPARATION OF GAN AND COSI2 EPITAXIAL-FILMS BY MASS ANALYZED LOW-ENERGY DUAL ION-BEAM EPITAXY

The Mass Analyzed Low Energy Dual Ion Beam Epitaxy (MALE-DIBE) system has been designed and constructed in our laboratory. We believe that the system, which was installed and came into full operation in 1988, is the first facility of this kind. With our system we have carried out studies, for the first time, on compound synthesis of GaN and CoSi2 epitaxial thin films. RHEED and AES results show that GaN films, which were deposited on Si and sapphire substrates, are monocrystalline and of good stoichiometry. To our knowledge, GaN film heteroepitaxially grown on Si. which is more lattice-mismatched than GaN on sapphire, has not been reported before by other authors. RBS and TEM investigations indicated a rather good crystallinity of CoSi2 with a distinct interface between CoSi2 and the Si substrate. The channelling minimum yield chi(min) from the Co profile is approximately 4%. The results showed that the DIBE system with simultaneous arrival of two beams at the target is particularly useful in the formation of novel compounds at a relatively low substrate temperature.

A theoretical model for the tilt of the GaAs/Si epilayers

The crystallographic tilt of the epilayers with respect to their substrates has been observed in many heteroepitaxial systems. Many models have been proposed to explain this phenomenon, but none of them is suitable for the large mismatched system, such as GaAs/Si. Here a new model is proposed for GaAs/Si epilayers, which can also be used in other large mismatched systems. The magnitude of the tilt calculated from this model coincide well with the experimental results. Especially, this model can correctly predict the tilt direction of the GaAs/Si epilayers.

Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN

The electronic properties of wide-energy gap zinc-blende structure GaN, A1N, and their alloys Ga(1-x)A1(x)N are investigated using the empirical pseudopotential method. Electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained for GaN and AIN, respectively. The energies of Gamma, X, L conduction valleys of Ga(1-x)A1(x)N alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. (C) 1995 American Institute of Physics.

Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN

The electronic properties of wide energy gap zinc-blende structure GaN, AlN and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole Effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained. The energies of Gamma, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.

Neutron-proton bremsstrahlung from intermediate energy heavy-ion reactions as a probe of the nuclear symmetry energy?

Hard photons from neutron-proton bremsstrahlung in intermediate energy heavy-ion reactions are examined as a potential probe of the nuclear symmetry energy within a transport model. Effects of the symmetry energy on the yields and spectra of hard photons are found to be generally smaller than those due to the currently existing uncertainties of both the in-medium nucleon-nucleon cross sections and the photon production probability in the elementary process pn -> pn gamma. Very interestingly, nevertheless, the ratio of hard photon spectra R-1/2(gamma) from two reactions using isotopes of the same element is not only approximately independent of these uncertainties but also quite sensitive to the symmetry energy. For the head-on reactions of Sn-132 + Sn-124 and Sn-112 + Sn-112 at E-beam/A = 50 MeV, for example, the R-1/2(gamma) displays a rise up to 15% when the symmetry energy is reduced by about 20% at rho = 1.3 rho(0) which is the maximum density reached in these reactions. (C) 2008 Elsevier B.V. All rights reserved.

Parton energy loss in heavy-ion collisions via direct-photon and charged-particle azimuthal correlations

Charged-particle spectra associated with direct photon (gamma(dir)) and pi(0) are measured in p + p and Au + Au collisions at center-of-mass energy root(S)(NN) = 200 GeV with the STAR detector at the Relativistic Heavy Ion Collider. A shower-shape analysis is used to partially discriminate between gamma(dir) and pi(0). Assuming no associated charged particles in the gamma(dir) direction ( near side) and small contribution from fragmentation photons (gamma(frag)), the associated charged-particle yields opposite to gamma(dir) (away side) are extracted. In central Au + Au collisions, the charged-particle yields at midrapidity (vertical bar eta vertical bar < 1) and high transverse momentum (3 < (assoc)(PT) < 16 GeV/c) associated with gamma(dir) and pi(0) (vertical bar eta vertical bar < 0.9, 8 < (trig)(PT) < 16 GeV/c) are suppressed by a factor of 3-5 compared with p + p collisions. The observed suppression of the associated charged particles is similar for gamma(dir) and pi(0) and independent of the gamma(dir) energy within uncertainties. These measurements indicate that, in the kinematic range covered and within our current experimental uncertainties, the parton energy loss shows no sensitivity to the parton initial energy, path length, or color charge.

Drift distance survey in direct plasma injection scheme for high current beam production

In a laser ion source, plasma drift distance is one of the most important design parameters. Ion current density and beam pulse width are defined by plasma drift distance between a laser target and beam extraction position. In direct plasma injection scheme, which uses a laser ion source and a radio frequency quadrupole linac, we can apply relatively higher electric field at beam extraction due to the unique shape of a positively biased electrode. However, when we aim at very high current acceleration such as several tens of milliamperes, we observed mismatched beam extraction conditions. We tested three different ion current at ion extraction region by changing plasma drift distance to study better extraction condition. In this experiment, C6+ beam was accelerated. We confirmed that matching condition can be improved by controlling plasma drift distance.

Pressure drops of single and two-phase flows through T-type microchannel mixers

In this paper, preliminary experimental results are presented on pressure drop characteristics of single and two-phase flows through two T-type rectangular microchannel mixers with hydraulic diameters of 528 and 333 mum, respectively. It is shown that both N-2 and water single-phase laminar flows in microchannels, with consideration of experimental uncertainties, are consistent with classic theory, if additional effects, such as entrance effects that will interfere with the interpretation of experimental results, are eliminated by carefully designing the experiments. The obtained pressure drop data of N-2-water two-phase flow in micromixers are analyzed and compared with existing flow pattern-independent models. It is found that the Lockhart-Martinelli method generally underpredicts the frictional pressure drop. Thereafter, a modified correlation of C value in the Chisholm's equation based on linear regression of experimental data is proposed to provide a better prediction of the two-phase frictional pressure drop. Also among the homogeneous flow models investigated, the viscosity correlation of McAdams indicates the best performance in correlating the frictional pressure drop data (mean deviations within +/-20% for two micromixers both). Finally it is suggested that systematic studies are still required to accurately predict two-phase frictional performance in microchannels. (C) 2004 Elsevier B.V. All rights reserved.

Validating MODIS-derived land surface evapotranspiration with in situ measurements at two AmeriFlux sites in a semiarid region

Reducing uncertainties in the estimation of land surface evapotranspiration (ET) from remote-sensing data is essential to better understand earth-atmosphere interactions. This paper demonstrates the applicability of temperature-vegetation index triangle (T-s-VI) method in estimating regional ET and evaporative fraction (EF, defined as the ratio of latent heat flux to surface available energy) from MODIS/Terra and MODIS/Aqua products in a semiarid region. We have compared the satellite-based estimates of ET and EF with eddy covariance measurements made over 4 years at two semiarid grassland sites: Audubon Ranch (AR) and Kendall Grassland (KG). The lack of closure in the eddy covariance measured surface energy components is shown to be more serious at MODIS/Aqua overpass time than that at MODIS/Terra overpass time for both AR and KG sites. The T-s-VI-derived EF could reproduce in situ EF reasonably well with BIAS and root-mean-square difference (RMSD) of less than 0.07 and 0.13, respectively. Surface net radiation has been shown to be systematically overestimated by as large as about 60 W/m(2). Satisfactory validation results of the T-s-VI-derived sensible and latent heat fluxes have been obtained with RMSD within 54 W/m(2). The simplicity and yet easy use of the T-s-VI triangle method show a great potential in estimating regional ET with highly acceptable accuracy that is of critical significance in better understanding water and energy budgets on the Earth. Nevertheless, more validation work should be carried out over various climatic regions and under other different land use/land cover conditions in the future.

Preparation of colorless ionic liquids "on water" for spectroscopy

Although colorless ionic liquids (ILs) are most desirable, as synthesized they frequently bear color, despite appearing pure by most analytical techniques. It leads to some uncertainties and limits for the fundamental research and applications of ILs, such as spectroscopy. Using 1-butyl-3-methylimidazolium bromide (BMIMBr), 1-butyl-3-methylimidazolium tetrafluoroborate (BMIMBF4) and 1-hexyl-3-methylimidazolium bromide (HMIMBr) as models, we demonstrated that following classic preparing method except that the water was added as solvent, colorless ILs could be facilely prepared. Neither critical pre-treatment of starting materials and pre-cautions during the reaction nor time-consuming and costly post-decolor-purification was needed, The effects of "on water" reaction conditions on preparing colorless IL and the reason why using water as solvent could produce colorless ILs were also preliminary investigated.