Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate

Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates

In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates; Transmission electron microscopy (TEM) and photoluminescence (PL) results confirm QDs formation for all samples. The PL spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. Highest PL integral intensity is observed from QDs on (411)B surfaces, which shows a potential for improving the optical properties of QDs by using high-index surface. (C) 2000 Elsevier Science B.V. All rights reserved.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.

Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 C and then studied using UV–vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles...

Void swelling in MA956 ODS steel irradiated with 122 MeV Ne-ions at elevated temperatures

An investigation of a commercial oxide dispersion-strengthened steel (MA9561) irradiated with high energy Ne-ions to high doses at elevated temperatures is presented. Specimens of MA956 oxide dispersion strengthened steel together with a 9% Cr ferritic/martensitic steel, e.g., Grade 92 steel were irradiated simultaneously with 20Ne-ions (with 122 MeV) to successively increasing damage levels of 1, 5 and 10 dpa at the damage peak at 440 C and 570 C, respectively. Cross-sectional microstructures of the specimens were investigated with transmission electron microscopy. MA956 oxide dispersion strengthened steel showed a higher resistance to void swelling especially to void growth at the grain boundaries than the ferritic/martensitic steel, e.g., Grade 92 steel did, and thus exhibited a prominence for an application in the situation of a high He production at high temperatures. The suppression of the growth of voids especially at the grain boundaries in MA956 is ascribed to an enhanced recombination of the point defects and a trapping of Ne atoms at the interfaces of the yttrium–aluminum oxide particles and the matrix.

Void swelling in a 9Cr ferritic/martensitic steel irradiated with energetic Ne-ions at elevated temperatures

In this work the void swelling behavior of a 9Cr ferritic/martensitic steel irradiated with energetic Ne-ions is studied. Specimens of Grade 92 steel (a 9%Cr ferritic/martensitic steel) were subjected to an irradiation of Ne-20-ions (with 122 MeV) to successively increasing damage levels of 1, 5 and 10 dpa at a damage peak at 440 and 570 degrees C, respectively. And another specimen was irradiated at a temperature ramp condition (high flux condition) with the temperature increasing from 440 up to 630 degrees C during the irradiation. Cross-sectional microstructures were investigated with a transmission electron microscopy (TEM). A high concentration of cavities was observed in the peak damage region in the Grade 92 steel irradiated to 5 dpa, and higher doses. The concentration and mean size of the cavities showed a strong dependence on the dose and irradiation temperature. Enhanced growth of the cavities at the grain boundaries, especially at the grain boundary junctions, was observed. The void swelling behavior in similar 9Cr steels irradiated at different conditions are discussed by using a classic void formation theory. (c) 2008 Elsevier B.V. All rights reserved.

Effects of helium and oxygen common implantation in silicon wafer

Defect engineering for SiO2] precipitation is investigated using He-ion implantation as the first stage of separation by implanted oxygen (STMOX). Cavities are created in Si by implantation with helium ions. After thermal annealing at different temperatures, the sample is implanted with 120keV 8.0 x 10(16) cm(-2) O ions. The O ion energy is chosen such that the peak of the concentration distribution is centred at the cavity band. For comparison, another sample is implanted with O ions alone. Cross-sectional transmission electron microscopy (XTEM), Fourier transform infrared absorbance spectrometry (FTIR) and atomic force microscopy (AFM) measurements are used to investigate the samples. The results show that a narrow nano-cavity layer is found to be excellent nucleation sites that effectively assisted SiO2 formation and released crystal lattice strain associated with silicon oxidation.

A study of the suppression of the high-temperature helium embrittlement in an oxide-particle dispersion strengthened alloy

In this paper, an investigation on the micro-structure of an Fe-base oxide-dispersion-strengthened (ODS) alloy irradiated with high-energy Ne-20 ions to different doses at a temperature around 0.5T(m) (T-m is the melting point of the alloy) is presented. Investigation with the transmission electron microscopy found that the accelerated growth of voids at grain-boundaries, which is usually a concern in conventional Fe-base alloys under conditions of inert-gas implantation, was not observed in the ODS alloy irradiated even to the highest dose (12000 at.ppm Ne). The reason is ascribed to the enhanced recombination of point defects and strong trapping of Ne atoms at the interfaces of the nano-scale oxide particles in grains. The study showed that ODS alloys have good resistance to the high-temperature inter-granular embrittlement due to inert-gas accumulation, exhibiting prominence of application in harsh situations of considerable helium production at elevated temperatures like in a fusion reactor.

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe+ and Mo+ ions of 110 keV), swift heavy ions (Pb-208(27+) ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xen+ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm(3)),. which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.

Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu

In the present work specimens of mono-crystalline silicon carbide (4H polytype) were irradiated to three successively increasing ion fluences ranging from 7.2 x 10(14) to 6.0 x 10(16) ions/cm(2) (corresponding to the peak displacement damage of 1, 4 and 13 dpa) with Ne and Xe ions respectively with the energy of 2.3 MeV/amu. The irradiated specimens were subsequently annealed at temperatures of 1173 and 1273 K. Defect structure was investigated with transmission electron microscopy (TEM) using a cross-sectional specimen preparation technique. The typical microstructures of the annealed specimens irradiated with Ne or Xe ions to high fluences are characterized by small gas bubbles in high concentration in the peak damage region and black dots and dislocation loops (located in the basal plane) in a shallower and broader depth region. Larger dislocation loops were observed in the Xe-ion irradiated specimen than in the Ne-ion irradiated specimen at the same peak damage level. The enhanced formation of dislocation loops in the case of Xe-ion irradiation is understandable by assuming stronger inclination of heavier inert-gas atoms to occupy substitute site in the peak damage region.

Microstructural evolution in silicon implanted with chlorine ions

In the present work p-type Si specimens were implanted with Cl ions of 100 keV to successively increasing fluences of 1 x 10(15), 5 x 10(15), 1 x 10(16) and 5 x 10(16) ions cm(-2) and subsequently annealed at 1073 K for 30 min. The microstructure was investigated with the transmission electron microscopy (TEM) in both the plane-view and the cross-sectional view. The implanted layer was amorphized after chlorine implantation even at the lowest ion fluence, while re-crystallization of the implanted layer occurs on subsequent annealing at 1073 K. In the annealed specimens implanted above the lowest fluence three layers along depth with different microstructures were found, which include a shallow polycrystalline porous layer, a deeper single-crystalline layer containing high density of gas bubbles, a well separated deeper layer composed of dislocation loops in low density. With increasing ion fluence the thickness of the porous polycrystalline layer increases. It is indicated that chlorine can suppress the epitaxial re-crystallization of implanted silicon, when the implant fluence of Cl ions exceeds a certain level.

Preparation of silver nanowires in ion-track membranes

Polycarbonate (PC) membranes were irradiated with swift heavy ions and latent tracks were created along the ions' trajectories. Nanopores, diameters between 100 and 500 nm, were obtained after illuminating the membranes with UV light and etching in NaOH solution. Silver nanowires were produced in the etched ion-track membranes by electrochemical deposition. The morphology and crystallinity of the silver nanowires were studied by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area electron diffraction (SAED). Under certain conditions (deposition voltage 25 mV, current density 1-2 mA.cm(-2), temperature 50 degrees C, electrolyte 0.1 mol.L-1 AgNO3), single-crystalline silver nanowires with preferred orientation along the [111] direction can be synthesized.

The effects of the annealing time on helium implantation in Si

The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles. (C) 2010 Elsevier B.V. All rights reserved.

The annealing behavior of Cu nanoparticles in Ar-ion implanted spinel

Magnesium aluminate spinel crystals (MgAl2O4 (1 1 0)) deposited with 30 nm Cu film on surface were implanted with 110 key Ar-ions to a fluence of 1.0 x 10(17) ions/cm(2) at 350 degrees C, and then annealed in vacuum condition at the temperature of 500, 600, 700, 800 and 900 degrees C for 1 h, respectively. Ultraviolet-visible spectrometry (UV-VIS), scanning electron microscopy (SEM), Rutherford backscattering (RBS) and transmission electron microscopy (TEM) were adopted to analyze the specimens. After implantation, the appearance of surface plasmon resonance (SPR) absorbance peak in the UV-VIS spectrum indicated the formation of Cu nanoparticles, and the TEM results for 500 degrees C also confirmed the formation of Cu nanoparticles at near-surface region. In annealing process, The SPR absorbance intensity increased at 500 and 700 degrees C, decreased with a blue shift of the peak position at 600 and 800 degrees C, and the peak disappeared at 900 degrees C. The SPR absorbance intensity evolution with temperature was discussed combined with other measurement results (RBS, SEM and TEM). (C) 2010 Elsevier B.V. All rights reserved.