Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates
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2000
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| Resumo |
In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates; Transmission electron microscopy (TEM) and photoluminescence (PL) results confirm QDs formation for all samples. The PL spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. Highest PL integral intensity is observed from QDs on (411)B surfaces, which shows a potential for improving the optical properties of QDs by using high-index surface. (C) 2000 Elsevier Science B.V. All rights reserved. In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates; Transmission electron microscopy (TEM) and photoluminescence (PL) results confirm QDs formation for all samples. The PL spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. Highest PL integral intensity is observed from QDs on (411)B surfaces, which shows a potential for improving the optical properties of QDs by using high-index surface. (C) 2000 Elsevier Science B.V. All rights reserved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:22导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:22Z (GMT). No. of bitstreams: 1 2946.pdf: 197146 bytes, checksum: a1542f31d4052f64a35f9b991e1b976d (MD5) Previous issue date: 2000 Lab Semiconduct Mat Sci.; Inst Semiconduct.; Chinese Acad Sci. Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China Lab Semiconduct Mat Sci.; Inst Semiconduct.; Chinese Acad Sci. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| Fonte |
Sun ZZ; Liu FQ; Wu J; Ye XL; Ding D; Xu B; Liang JB; Wang ZG .Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates .见：ELSEVIER SCIENCE BV .PHYSICA E, 8 (2),PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2000,164-169 |
| Palavras-Chave | #半导体材料 #self-assembled quantum dots #InP substrate #high index #In(Ga #Al)As/InAlAs/InP #MBE #MOLECULAR-BEAM-EPITAXY #VAPOR-PHASE EPITAXY #GAAS #ISLANDS #PHOTOLUMINESCENCE #INP(001) #GROWTH #LASERS |
| Tipo |
会议论文 |
