Studies an Optical and X-ray Emission Processes in Laser Produced Plasma

Developments in laser technology over the past few years have made it possible to do experiments with focused intensities of IO"-102' Wcm'z. Short-pulse high-intensity lasers are able to accelerate protons and heavier ions to multi-MeV energies during their interaction with solid targets, gas jets and clusters. When such a laser radiation is focused at the intensity above 10” Wcm'2, local electric field strength will be almost equivalent to that within an atom. Hence, new nonlinear optical phenomena will be expected in the field of light matter interaction. Most of the research in the material interaction using high power lasers, especially related to plasma interaction, has been directed to the short pulse x-ray generation- Nanosecond laser interactions with solid targets also generate plasmas which emit radiation mainly in the optical region, the understanding of which is far from satisfactory. This thesis deals with a detailed study of some of the dynamical processes in plasmas generated by nanosecond and femtosecond lasers

Enhanced UV emission from ZnO nanoflowers synthesized by the hydrothermal process

ZnO nanoflowers were synthesized by the hydrothermal process at an optimized growth temperature of 200 ◦C and a growth/reaction time of 3 h. As-prepared ZnO nanoflowers were characterized by x-ray diffraction, scanning electron microscopy, UV–visible and Raman spectroscopy. X-ray diffraction and Raman studies reveal that the as-synthesized flower-like ZnO nanostructures are highly crystalline with a hexagonal wurtzite phase preferentially oriented along the (1 0 1 1) plane. The average length (234–347 nm) and diameter (77–106 nm) of the nanorods constituting the flower-like structure are estimated using scanning electron microscopy studies. The band gap of ZnO nanoflowers is estimated as 3.23 eV, the lowering of band gap is attributed to the flower-like surface morphology and microstructure of ZnO. Room temperature photoluminescence spectrum shows a strong UV emission peak at 392 nm, with a suppressed visible emission related to the defect states, indicating the defect free formation of ZnO nanoflowers that can be potentially used for UV light-emitting devices. The suppressed Raman bands at 541 and 583 cm−1 related to defect states in ZnO confirms that the ZnO nanoflowers here obtained have a reduced presence of defects

Boosted UV emission at 349 nm from mesoporous ZnS

Relatively oxygen-free mesoporous cubic ZnS particles were synthesised via a facile solvo-hydrothermal route using a water–acetonitrile combination. Boosted UV emission at 349 nm is observed from the ZnS prepared by the solvo-hydrothermal route. The increased intensity of this UV emission is attributed to activation of whispering gallery modes of almost elliptical microstructures made of porous nanostructures.

Kinematic dipole model for the anisotropy of quasimolecular X-rays

For the angular dependence of quasimolecular X-ray emission in heavy ion colliding systems we present a semiclassical adiabatic model taking into account spontaneous dipole radiation. Using the most characteristic levels from a DFS-correlation diagram we are able to explain the behaviour of the observed anisotropy.

Effects of Platinum on NiPtSiGe/n-SiGe and NiPtSi/n-Si Schottky Contacts

Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex system. As a result, a detailed study is necessary for the interfacial reaction between NiPt alloy film and SiGe substrate. Besides using traditional material characterization techniques, characterization of Schottky diode is a good measure to detect the interface imperfections or defects, which are not easy to be found on large area blanket samples. The I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%) germanosilicides/n-Si₀/₇Ge₀.₃ and silicides/n-Si contact annealed at 400 and 500°C were studied. For Schottky contact on n-Si, with the addition of Pt in the Ni(Pt) alloy, the Schottky barrier height (SBH) increases greatly. With the inclusion of a 10% Pt, SBH increases ~0.13 eV. However, for the Schottky contacts on SiGe, with the addition of 10% Pt, the increase of SBH is only ~0.04eV. This is explained by pinning of the Fermi level. The forward I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%)SiGe/SiGe contacts annealed at 400°C were investigated in the temperature range from 93 to 300K. At higher temperature (>253K) and larger bias at low temperature (<253K), the I-V curves can be well explained by a thermionic emission model. At lower temperature, excess currents at lower forward bias region occur, which can be explained by recombination/generation or patches due to inhomogenity of SBH with pinch-off model or a combination of the above mechanisms.

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation of the crystalline quality of the epitaxial layers. In addition, unlike other III-V compound semiconductors, the ratio of gallium to indium incorporated in InGaN is in general not a simple function of the metal atomic flux ratio, f[subscript Ga]/f[subscript In]. Instead, In incorporation is complicated by the tendency of gallium to incorporate preferentially and excess In to form metallic droplets on the growth surface. This phenomenon can definitely affect the In distribution in the InGaN system. Scanning electron microscopy, room temperature photoluminescence, and X-ray diffraction techniques have been used to characterize InGaN layer grown on InN and InGaN buffers. The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation.

The importance of causal connections in the comprehension of spontaneous spoken discourse. 'La importancia de las conexiones causales en la comprensi??n de discurso oral espont??neo'

Resumen tomado de la publicaci??n

Bacteriemia asociada a catéter epicutáneo en la unidad de cuidado intensivo neonatal de la Fundación Cardioinfantil

La bacteriemia asociada a catéter afecta a pacientes en las unidades de cuidado intensivo con una alta morbilidad, mortalidad y aumento de los costos al sistema de salud. Los recién nacidos son la población de más alto riesgo por el mayor uso de catéteres centrales. Objetivo: Caracterizar factores de riesgo para bacteriemia asociada a catéter en la Unidad de Cuidado Intensivo Neonatal de la Fundación Cardioinfantil entre 2005 - 2010 Materiales y método: Estudio descriptivo de corte transversal, incluyó todos los recién nacidos con diagnostico de bacteriemia asociada a catéter. Se analizó la información utilizando frecuencias y medidas de tendencia central. Resultados: Se encontraron 50 pacientes con diagnostico de bacteriemia asociada a catéter. 50% de género masculino, 52% con edad gestacional al nacimiento menor a 36 semanas y 24% con peso menor a 1500 gramos al momento de la inserción del catéter. La edad fue de 24.2 días al momento de la inserción del catéter. En el 66% de los pacientes el sitio de inserción fue el miembro superior, siendo el Sthaphylococcus Epidermidis el germen con el 50% de las bacteriemias. Conclusión: La bacteriemia asociada a catéter afecta paciente prematuros, de bajo peso sin diferencias en genero. La manipulación de dichos dispositivos, el sitio de inserción, el uso previo de antibióticos, la duración del catéter y el uso de nutrición parenteral son factores que están asociados al mayor riesgo de infección. Siendo el Staphylococcus Epidermidis el germen mas frecuente.

Spontaneous language measures in monolingual preschool Spanish-speaking children. 'Medidas de evaluación del lenguaje espontáneo en niños hispanohablantes en edad preescolar'.

Resumen en español. Resumen basado en el de la publicación

The age of excess : America 1920-1932.

Entre 1920 y 1932 Estados Unidos aumentó en gran medida su nivel de prosperidad y, a continuación, se estrelló en las profundidades de la depresión. América es la tierra de la oportunidad y su sistema democrático ofrece un sueño de libertad a pesar de los problemas raciales, la intolerancia política, la prohibición, los gangsters, la violencia y las diferencias religiosas. Estos años fueron los locos años veinte que terminaron con el Crash de 1929.Incluye fragmentos de fuentes históricas originales, así como, material de aprendizaje activo: ejercicios, preguntas y pruebas.

Spontaneous Meta-Arithmetic as the First Step Toward School Algebra. 'La meta-aritmética espontánea como el primer paso hacia el álgebra escolar'.

Resumen basado en el de la publicación

Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition

Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. A model is developed that considers the particles in the powder as independent, so under vacuum the only dissipation mechanism is thermal radiation. The supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as is the exponential quenching when the gas pressure around the sample increases. The analysis allows us to determine the sample temperature. The local heating of the sample has been assessed independently by the position of the transverse optical Raman mode. Finally, it is suggested that the photoluminescence observed in porous silicon and similar materials could, in some cases, be blackbody radiation