Consumers' emotional judgement of materials durability and disposal

The literature demonstrates that understanding relating to the use of materials in product design has been investigated from both engineering and design perspectives. However, none of these studies have explored the consumers’ concepts of the materials; rather they have focused on participants’ discussions of material samples. Consumers’ emotional reactions to the materials themselves or the consumers’ reaction to the durability of the materials have not been previously explored in depth. This research has investigated these issues and has found that consumers have very specific concepts about materials. Furthermore, the combinations of consumer concepts that are likely to elicit an emotional judgement by the consumer have also been identified. It was found that consumers are conscious of the durability of their products and the materials that they are made from. This knowledge contributes to the support of environmentally conscious design, as well as user-centered design knowledge and practice. An understanding of the emotion consumers attribute to the effect wear and aging had on the materials’ physical appearance has been achieved. This understanding of consumers’ emotional reactions to materials can contribute not only to design considerations but to knowledge regarding the promotion of prolonged product-user relationships.

Atomic Layer Deposition of Multicomponent Oxide Materials

Atomic layer deposition (ALD) is a method for thin film deposition which has been extensively studied for binary oxide thin film growth. Studies on multicomponent oxide growth by ALD remain relatively few owing to the increased number of factors that come into play when more than one metal is employed. More metal precursors are required, and the surface may change significantly during successive stages of the growth. Multicomponent oxide thin films can be prepared in a well-controlled way as long as the same principle that makes binary oxide ALD work so well is followed for each constituent element: in short, the film growth has to be self-limiting. ALD of various multicomponent oxides was studied. SrTiO3, BaTiO3, Ba(1-x)SrxTiO3 (BST), SrTa2O6, Bi4Ti3O12, BiTaO4 and SrBi2Ta2O9 (SBT) thin films were prepared, many of them for the first time by ALD. Chemistries of the binary oxides are shown to influence the processing of their multicomponent counterparts. The compatibility of precursor volatilities, thermal stabilities and reactivities is essential for multicomponent oxide ALD, but it should be noted that the main reactive species, the growing film itself, must also be compatible with self-limiting growth chemistry. In the cases of BaO and Bi2O3 the growth of the binary oxide was very difficult, but the presence of Ti or Ta in the growing film made self-limiting growth possible. The application of the deposited films as dielectric and ferroelectric materials was studied. Post-deposition annealing treatments in different atmospheres were used to achieve the desired crystalline phase or, more generally, to improve electrical properties. Electrode materials strongly influenced the leakage current densities in the prepared metal insulator metal (MIM) capacitors. Film permittivities above 100 and leakage current densities below 110-7 A/cm2 were achieved with several of the materials.

Einstein relation in n-i-p-i and microstructures of nonlinear optical, optoelectronic and related materials: Simplified theory, relative comparison and suggestions for an experimental determination

We investigate the Einstein relation for the diffusivity-mobility ratio (DMR) for n-i-p-i and the microstructures of nonlinear optical compounds on the basis of a newly formulated electron dispersion law. The corresponding results for III-V, ternary and quaternary materials form a special case of our generalized analysis. The respective DMRs for II-VI, IV-VI and stressed materials have been studied. It has been found that taking CdGeAs2, Cd3As2, InAs, InSb, Hg1−xCdxTe, In1−xGaxAsyP1−y lattices matched to InP, CdS, PbTe, PbSnTe and Pb1−xSnxSe and stressed InSb as examples that the DMR increases with increasing electron concentration in various manners with different numerical magnitudes which reflect the different signatures of the n-i-p-i systems and the corresponding microstructures. We have suggested an experimental method of determining the DMR in this case and the present simplified analysis is in agreement with the suggested relationship. In addition, our results find three applications in the field of quantum effect devices.

Oversized Materials, Box 1 1873, 1876, 1880

Oversized materials is the digitized contents of one box (OS1) that consists of correspondence and an address from Box 2, Folders 12, 13 and 17.

Oversized Materials, Box 1 1873, 1876, 1880

Oversized materials is the digitized contents of one box (OS1) that consists of correspondence and an address from Box 2, Folders 12, 13 and 17.

Oversized Materials, Box 1 1873, 1876, 1880

Oversized materials is the digitized contents of one box (OS1) that consists of correspondence and an address from Box 2, Folders 12, 13 and 17.

Oversized Materials, Box 1 1873, 1876, 1880

Oversized materials is the digitized contents of one box (OS1) that consists of correspondence and an address from Box 2, Folders 12, 13 and 17.

Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films

The electrical activation energy and optical band-gap of GeSe and GeSbSe thin films prepared by flash evaporation on to glass substrates have been determined. The conductivities of the films were found to be given by Image , the activation energy Ea being 0.53 eV and 0.40 eV for GeSe and GeSbSe respectively. The optical absorption constant α near the absorption edge could be described by Image from which the optical band-gaps E0 were found to be 1.01 eV for GeSe and 0.67 eV for GeSbSe at 300°K. At 110°K the corresponding values of E0 were 1.07 eV and 0.735 eV respectively. The significance of these values is discussed in relation to those of other amorphous semiconductors.

Finite element analysis of laminated anisotropic beams of bimodulus materials

This paper presents finite element analysis of laminated anisotropic beams of bimodulus materials. The finite element has 16 d.o.f. and uses the displacement field in terms of first order Hermite interpolation polynomials. As the neutral axis position may change from point to point along the length of the beam, an iterative procedure is employed to determine the location of zero strain points along the length. Using this element some problems of laminated beams of bimodulus materials are solved for concentrated loads/moments perpendicular and parallel to the layering planes as well as combined loads.

Miscellaneous materials regarding Newport

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Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100-xBix at high pressure

Electrical transport in Bi doped amorphous semiconductors (GeSe3.5)100-xBix (x=0,4,10) is studied in a Bridgman anvil system up to a pressure of 90 kbar and down to 77 K. A pressure induced continuous transition from an amorphous semiconductor to a metal-like solid is observed in GeSe3.5. The addition of Bi disturbs significantly the behaviour of resistivity with pressure. The results are discussed in the light of molecular cluster model for GeySe1-y proposed by Phillips.

Microwave modulation by amorphous-semiconductor switches

Microwave modulation has been achieved by using thin-film amorphous-semiconductor switches made of ternary chalcogenides. X-band microwaves were modulated by a threshold switch at frequencies varying from 100 Hz to 1 MHz, with modulation efficiencies comparable to siliconp¿i¿n diodes. The insertion loss was 0.5 to 0.6 dB and the isolation was 18 dB at 100 mA operating current. Possible applications this method are discussed.