Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films


Autoria(s): Katti, VR; Govindacharyulu, PA; Bose, DN
Data(s)

01/12/1972

Resumo

The electrical activation energy and optical band-gap of GeSe and GeSbSe thin films prepared by flash evaporation on to glass substrates have been determined. The conductivities of the films were found to be given by Image , the activation energy Ea being 0.53 eV and 0.40 eV for GeSe and GeSbSe respectively. The optical absorption constant α near the absorption edge could be described by Image from which the optical band-gaps E0 were found to be 1.01 eV for GeSe and 0.67 eV for GeSbSe at 300°K. At 110°K the corresponding values of E0 were 1.07 eV and 0.735 eV respectively. The significance of these values is discussed in relation to those of other amorphous semiconductors.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/23620/1/3.pdf

Katti, VR and Govindacharyulu, PA and Bose, DN (1972) Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films. In: Thin Solid Films, 14 (1). pp. 143-148.

Publicador

Elsevier Science

Relação

http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TW0-46X9VXR-4C&_user=512776&_rdoc=1&_fmt=&_orig=search&_sort=d&_docanchor=&view=c&_acct=C000025298&_version=1&_urlVersion=0&_userid=512776&md5=69c665e6c78cbf72a3b047016312336a

http://eprints.iisc.ernet.in/23620/

Palavras-Chave #Electrical Communication Engineering
Tipo

Journal Article

PeerReviewed