N,Sb和单分子层数对GaAs/GaInNAsSb超晶格性能的影响

用Keating的价力场(valence force field)模型和蒙特卡罗方法计算了GaAs/GaInNAsSb超晶格中键的分布、原子的精确位置以及应变.用折叠谱法(folded spectrum method)结合Williamson经验赝势法计算了GaAs/GaInNAsSb超晶格应变条件下的电子结构.讨论了N和Sb原子以及超晶格单分子层数对电子结构的影响.发现导带底电子态在N原子周围的局域化减小了光跃迁矩阵元,从而影响了该超晶格的发光性能.计算并讨论了超晶格的电子和空穴的有效质量.

Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor

GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy) as the nitrogen precursor. High-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) are combined in determining the nitrogen contents in the samples. Room temperature photoluminescence (RTPL) measurement is also used in characterizing. The influence of different Ga precursors on GaNAs quality is investigated. Samples grown with triethylgallium (TEGa) have better qualities and less impurity contamination than those with trimethylgallium (TMGa). Nitrogen content of 5.688% is achieved with TEGa. The peak wavelength in RTPL measurement is measured to be 1278.5nm.

室温铁磁性半导体Mn_xGa_(1-x)Sb

采用离子注入、离子沉积及后期退火方法制备了稀磁半导体单晶Mn_xGa_(1-x)Sb，在室温下（300 K）获得了单晶的磁滞回线。用X射线衍射方法分析了铁磁性半导体单晶Mn_xGa_(1-x)Sb的结构，用电化学C-V法分析了单晶的载流子浓度分布。由X射线衍射得知，Mn_xGa_(1-x)Sb中Mn含量逐渐由近表面处的x = 0.09下降到晶片内部的x = 0。电化学C-V测得单晶的空穴浓度高达1 * 10~(21)cm~(-3)，表明Mn_xGa_(1-x)Sb单晶中大部分Mn原子占据Ga位，起受主作用。

Characterization of Ga N_x As_(1 - x) Alloy Grownon Ga As by Molecular Beam Epitaxy

集成光电子学国家重点实验室基金,国家863计划,国家自然科学基金,中科院项目

InAs/InP（0.7）Sb（0.3）热电子晶体管的fT及f（max）

于2010-11-23批量导入

等电子杂质Sb对InP中缺陷的影响

于2010-11-23批量导入

Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy

The effect of thermal annealing on the Raman spectrum of Si0.33Ge0.67 alloy grown on Si (100) by molecular beam epitaxy is investigated in the temperature range of 550-800 degrees C. For annealing below 700 degrees C, interdiffusion at the interface is negligible and the residual strain plays the dominant role in the Raman shift. The strain-shift coefficients for Si-Ge and Ge-Ge phonon modes are determined to be 915 +/- 215 cm(-1) and 732 +/- 117 cm(-1), respectively. For higher temperature annealing, interdiffusion is significant and strongly affects the Raman shift and the spectral shape.

Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy

The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, about 15% smaller than that of the ZnS band gap. A simple Koster-Slater model has been used to explain the different pressure behavior of the Te-1 and Te-2 centers. The pressure coefficient of the Te-3 centers is 62(2) meV/GPa. Then the pressure coefficients of the Te-n centers decrease rapidly with further increasing Te composition.

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

~(125)Sb高自旋态:粒子-核芯激发耦合

利用在束γ谱学方法,通过~(124)Sn(~7Li,α2n)反应研究了~(125)Sb的激发态,首次建立了~(125)Sb的高自旋能级纲图,其中包括21条新γ跃迁和14个新能级。发现1970,2110和2470 keV3个能级为同质异能态,基于延迟符合测量确定了它们的寿命范围,并确定其自旋、宇称分别为15/2~-,19/2~-和23/2~+。根据粒子-核芯耦合图像和经验壳模型计算解释了~(125)Sb的能级结构,3个同质异能态的组态分别被指定为πg_(7/2)(×)V(h_(11/2)s_(1/2))_(5~-),πg_(7/2)(×)V(h_(11/2)d_(3/2))_(7~-)和πg_(7/2)(×)V(h_(11/2)~2)_(10~+),

丰中子核~(125)Sb的高自旋态(英文)

利用在束γ谱学方法 ,通过1 2 4 Sn( 7Li,α2n)反应首次研究了丰中子核1 2 5Sb的高自旋态 .建立了自旋达 2 3 2 +、激发能至 2 63 7keV的能级纲图 ,其中包括 2 1条新γ跃迁和 1 4个新能级 .在 1 970 ,2 1 1 0和 2 471keV识别出了 3个同质异能态 ,估计了它们的寿命范围 ,并建议分别具有πg7 2 ν(h1 1 2 s1 2 ) ,πg7 2 ν(h1 1 2 d3 2 ) ,πg7 2 ν(h21 1 2 )三准粒子组态 .根据价质子与1 2 4 Sn核芯激发态的耦合讨论了1 2 5Sb的能级结构 .