Theory Of Phase Transformation And Reorientation In Single Crystalline Shape Memory Alloys

A constitutive model, based on an (n + 1)-phase mixture of the Mori-Tanaka average theory, has been developed for stress-induced martensitic transformation and reorientation in single crystalline shape memory alloys. Volume fractions of different martensite lattice correspondence variants are chosen as internal variables to describe microstructural evolution. Macroscopic Gibbs free energy for the phase transformation is derived with thermodynamics principles and the ensemble average method of micro-mechanics. The critical condition and the evolution equation are proposed for both the phase transition and reorientation. This model can also simulate interior hysteresis loops during loading/unloading by switching the critical driving forces when an opposite transition takes place.

(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit

(Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found except GaAs substrate peaks (0 0 2) and (0 0 4) by X-ray diffraction. Rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal X-ray diffraction. The element distributions vary so much due to the ion dose difference from AES depth profiles. The sample surface morphology indicates oxidizing layer roughness is also relative to the Gd ion dose, which leads to islandlike feature appearing on the high-dose sample. One sample shows ferromagnetic behavior at room temperature. (C) 2003 Elsevier B.V. All rights reserved.

SEM and EDS Characterisation of Layering TiOx Growth onto the Cutting Tool Surface in Hard Drilling Processes of Ti-Al-V Alloys

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低能离子束沉积制备GaAs:Gd的研究

对室温条件下用低能离子束沉积得到的 Ga As∶ Gd样品 ,借助 X射线衍射 (XRD)和高分辨 X射线衍射 (HR-XRD)进行了结构分析 ,结果表明没有出现新的衍射峰 ,并且摇摆曲线的形状与 Gd的注入计量密切相关 .运用 X光电子能谱仪对比分析了 Gd注入后 ,衬底中主要元素 Ga2 p和 As3d的化学位移 ,以及不同计量的样品中注入的Gd4 d芯能级束缚能的变化 ,并分析了铁磁性产生的可能原因 .

低能离子束制备(Ga,Gd,As)薄膜

室温条件下 ,用离子束外延设备制备 ( Ga,Gd,As)样品 ,X射线衍射 ( XRD)结果表明除了 Ga As衬底峰 ,没有发现其他新相的衍射峰。俄歇电子能谱 ( AES)分析了样品中元素随深度的变化 ,不同样品中元素的分布有着不同的特点。并运用原子力显微镜 ( AFM)研究了样品表面的形貌特点 ,表明样品表面的粗糙度与 Gd注入过程中在样品表面沉积的多少有关。运用交变梯度磁强计 ( AGM)对薄膜进行磁性分析 ,结果表明有的样品在室温条件下出现铁磁性 ,但金属钆本身具有室温铁磁性 ,因而需要进一步分析。

离子束外延制备GaAs:Gd薄膜

　室温条件下,用低能离子束外延制备了GaAs∶Gd薄膜,X射线衍射(XRD)结果表明除了GaAs衬底峰没有发现其它新相的衍射峰,并借助于高分辨X射线衍射(HR XRD)进一步分析了晶格常数的变化特点。俄歇电子能谱(AES)分析了样品表面的成分,及元素随深度的分布规律,在60nm深处元素的相对含量发生明显改变,运用原子力显微镜(AFM)揭示了样品表面的形貌特点。

Undercooling and Rapid Solidification of Nb-Si Eutectic Alloys Studied by Long Drop Tube

Niobium-silicide alloys have great potential for high temperature turbine applications. The two-phase Nb/Nb5Si3 in situ composites exhibit a good balance in mechanical properties. Using the 52 in drop tube, the effect of undercooling and rapid solidification on the solidification process and micro-structural characterization of Nb-Si eutectic alloy was studied. The microstructures of the Nb-Si composites were investigated by optics microscope (OM), X-ray diffraction (XRD) and scanning electron microscope (SEM) equipped with X-ray energy dispersive spectrometry (EDS). Up to 480 K, deep undercooling of the Nb-Si eutectic samples was successfully obtained, which corresponds to 25% of the liquidus temperature. Contrasting to the conventional microstructure usually found in the Nb-Si eutectic alloy, the microstructure of the undercooled sample is divided into the fine and coarse regions. The most commonly observed microstructure is Nb+Nb5Si3, and the Nb3Si phase is not be found. The change of coarseness of microstructure is due to different cooling rates during and after recalescence. The large undercooling is sufficient to completely bypass the high temperature phase field.

Crystal structure and phase transition studies in perovskite-type oxides using powder-diffraction techniques and symmetry-mode analysis : SrLnMRuO6 (Ln=La,Pr,Nd; M=Zn,Co,Mg,Ni,Fe) and ALn2CuTi2O9 (A=Ca,Ba; Ln=La,Pr,Nd,Sm)

La tesis se ha centrado en la síntesis y caracterización estructural de materiales tipo perovskita: SrLnMRuO6 (Ln=La,Pr,Nd; M=Zn,Co,Mg,Ni,Fe) y ALn2CuTi2O9 (A=Ca,Ba; Ln=La,Pr,Nd,Sm). El estudio de las estructuras de los materiales se ha realizado mediante el análisis de los patrones de difracción en polvo de rayos-X, sincrotrón y/o neutrones. En el refinamiento por el método de Rietveld de las estructuras se han sustituido las coordenadas atómicas (el método más común), por coordenadas colectivas: las amplitudes de los modos que describen la distorsión de la fase prototipo. Los resultados generales para la serie SrLnMRuO6 (Ln=La,Pr,Nd; M=Zn,Co,Mg,Ni) a temperatura ambiente se ha recogido en un diagrama en el que se han indicado las amplitudes de los modos que transforman de acuerdo a las irreps en función del factor de tolerancia, ya que todos ellos cristalizan en la misma fase monoclínica (P21/n); y a temperaturas altas se ha construido un diagrama de fase. Los materiales SrLnFeRuO6 ( Ln=La,Pr,Nd) y CaLn2CuTi2O9 cristalizan en la fase ortorrómbica Pbnm a temperatura ambiente; mientras que BaLn2CuTi2O9 tienen una estructura más simétrica, I4/mcm. A altas temperaturas se han identificado las transiciones de fase inducidas por el cambio de temperatura.A temperaturas bajas se han analizado las estructuras magnéticas de algunos de los compuestos mediante difracción de neutrones.

Defects structure characterization of NiMnGa alloys by PALS

16th International Conference on Positron Annihilation (ICPA) Univ Bristol, H H Wills Phys Lab, Bristol, ENGLAND AUG 19-24, 2012 Edited by:Alam, A; Coleman, P; Dugdale, S; Roussenova, M