氮施用量对夏玉米土壤水氮动态及水肥利用效率的影响

采用田间小区试验,监测夏玉米不同生长期土壤水分和硝态氮剖面含量变化,研究不同施氮量对其时空变化及籽粒产量、水肥利用效率的影响,探讨氮肥对水肥资源高效利用的调节作用。结果表明:不同施氮处理,土壤剖面水分和硝态氮随土壤深度的变化趋势基本一致,即表层50 cm土壤水分和硝态氮含量较高且呈降低态,50~110 cm相对较低且波动较小,灌浆期二者均达到最低值;各生长期表层50 cm土壤含水量呈不施氮处理均高于施氮处理,50~110 cm土层则相反;施氮能提高土壤硝态氮含量,土壤硝态氮运移受土壤水分状况和含量的影响,含量越高,向下移动越深;施氮能显著提高水分利用效率及籽粒产量,增产效果明显(增产28.52%~37.86%),二者均以施氮240 kg/hm2处理最高;随施氮量的增加籽粒产量及籽粒吸氮量和水分利用效率增幅均表现为先升高后降低之趋势,当施氮量超过240 kg/hm2后,籽粒产量和水分利用效率提高并不显著;不施氮与施氮处理氮素生产力、氮肥利用率之间均存在极显著差异。在本试验条件下,从控制土壤硝态氮积累及取得较高的产量和氮素利用率综合考虑,夏玉米的适宜施氮量范围应控制在120~240 kg/hm2较好。

施磷对夏玉米土壤硝态氮、吸氮特性及产量的影响

研究不同施磷水平对夏玉米生长期土壤硝态氮时空分布、累积量及玉米籽粒产量的影响,为夏玉米合理施肥提供参考依据。【方法】采用田间小区试验,在施磷水平分别为0,60,120和180 kg/hm2时,研究施磷对夏玉米产量及土壤氮素吸收累积的影响。【结果】在0~110 cm土层,随土壤剖面深度的增加,土壤硝态氮含量逐渐降低,0~30 cm土层明显高于30~110 cm土层且变幅较大,施磷肥能显著降低土壤硝态氮含量。随夏玉米生育期推进,0~110 cm土层硝态氮累积量呈先降低后升高的趋势,于灌浆期达到最低值;当施磷水平为120 kg/hm2时,成熟期0~110 cm土层硝态氮累积量低于施磷60和180 kg/hm2的处理;施磷肥能显著增加玉米籽粒产量、籽粒吸氮量及氮收获指数,均以施磷水平为120 kg/hm2时最高。【结论】在施氮基础上施用磷肥,有利于提高玉米籽粒产量,促进作物对氮素的吸收累积,减少土壤中硝态氮的累积及向更深土层中的运移量。

小麦氮磷肥长期配施对土壤硝态氮淋溶的影响

利用长期肥料定位试验,监测旱地农田土壤硝态氮的淋溶动向,研究施肥量与硝态氮累积量之间的关系,为科学施肥提供参考。【方法】在试验小区0～300cm土壤剖面中,每20cm深度取一个土样,1mol·L-1KCl浸提后以AA3连续流动分析仪测定硝态氮含量。【结果】单施氮肥土壤硝态氮累积峰出现在80～100cm土层和300cm以下土层,当施氮量达到180kg·hm-2·a-1时,0～300cm土层硝态氮累积总量相当于8年的施氮量。单施磷肥对土壤硝态氮分布无影响;氮、磷肥配施时,施氮量增加硝态氮累积量显著增加,配施磷肥后可以减少硝态氮累积量,且施氮量越大减少的越多。过量施用氮肥,即使配施磷肥,硝态氮也能发生淋溶并在100～120cm和240～260cm土层附近累积;二次多项式回归能够较好地反映氮、磷施用量与土壤硝态氮累积量之间的关系。【结论】长期过量施用氮肥,导致硝态氮大量淋溶并形成两个累积峰,科学合理地配施磷肥可以减少硝态氮淋失;旱地麦田长期施用最大产量施肥量,可能导致硝态氮大量累积在土壤深层。

STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES

Experimental study of the reverse annealing of the effective concentration of ionized space charges (N-eff, also called effective doping or impurity concentration) of neutron irradiated high resistivity silicon detectors fabricated on wafers with various thermal oxides has been conducted at room temperature (RT) and elevated temperature (ET). Various thermal oxidations with temperatures ranging from 975 degrees C to 1200 degrees C with and without trichlorethane (TCA), which result in different concentrations of oxygen and carbon impurities, have been used. It has been found that, the RT annealing of the N-eff is hindered initially (t < 42 days after the radiation) for detectors made on the oxides with high carbon concentrations, and there was no carbon effect on the long term (t > 42 days after the radiation) N-eff reverse annealing. No apparent effect of oxygen on the stability of N-eff has been observed at RT. At elevated temperature (80 degrees C), no significant difference in annealing behavior has been found for detectors fabricated on silicon wafers with various thermal oxides. It is apparent that for the initial stages (first and/or second) of N-eff reverse annealing, there may tie no dependence on the oxygen and carbon concentrations in the ranges studied.

Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP

Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect, current-voltage (I-V), photoluminescence spectroscopy (PL) and photocurrent spectroscopy (PC) measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration. Fe doping concentration also influences optical properties and defective formation in as-grown SI InP. Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PI and PC.

Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR

于2010-11-23批量导入

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

High-concentration hydrogen in unintentionally doped GaN

We use nuclear reaction analysis to study hydrogen in unintentionally doped GaN, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. Accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of NH: Ga complex. The complex is assumed to be one candidate answering for background electrons in unintentionally doped GaN. (C) 1998 Elsevier Science B.V. All rights reserved.