Sputtering of uranium

Sputtering yields for uranium metal under bombardment by 13 - 120 keV protons and by 20 - 120 keV He+ are presented. Angular distributions of the material sputtered by these ions are also given. Sputtering yields for 40 and 80 keV Ar+ were measured as well.

The technique employed to make these measurements was the detection of fission tracks in mica produced by ^(235)U sputtered onto collector foils which were subsequently exposed to a high fluence of thermal neutrons. The technique is extremely sensitive and allowed the measurement of sputtering yields less than 10^(-4) atoms per ion. It also made possible a detailed study of the emission of chunks from the uranium targets during sputtering. Mass distributions of chunks emitted during bombardment by 40 - 120 keV protons and by 80 keV argon are presented.

Comparisons are made between the experimental results and those predicted by the Sigmund theory of sputtering.

Isotopic fractionation in sputtering

Isotopic fractionation due to sputtering has been investigated via a collector type experiment in which targets of known isotopic composition have been bombarded with several keV Ar⁺ and Xe⁺ ions with fluences down to 3.0x10¹⁴ ions/cm² , believed to be the lowest fluences for which such detailed measurements have ever been made. The isotopes were sputtered onto carbon collectors and analyzed with Secondary Ion Mass Spectroscopy (SIMS.) There is clear indication of preferential effects several times that predicted by the dominant analytical theory. Results also show a fairly strong angular variation in the fractionation. The maximum effect is usually seen in the near normal direction, measured from the target surface, falling continuously, by a few percent in some cases, to a minimum in the oblique direction. Measurements have been made using Mo isotopes: ¹⁰⁰Mo and ⁹²Mo and a liquid metal system of In:Ga eutectic. The light isotope of Mo is found to suffer a 53 ± 5‰ (note: 1.0‰ ≡ 0.1%) enrichment in the sputtered flux in the near normal direction, compared to the steady state near normal sputtered composition, under 5.0 keV Xe⁺ bombardment of 3.0 x 10¹⁴ ions/cm². In the liquid metal study only the angular dependence of the fractionation could be measured due to the lack of a well defined reference and the nature of the liquid surface, which is able to 'repair' itself during the course of a bombardment. The results show that ¹¹³In is preferentially sputtered over ¹¹⁵In in the near normal direction by about 8.7 ± 2.7‰ compared to the oblique direction. ⁶⁹Ga, on the other hand, is sputtered preferentially over ⁷¹Ga in the oblique direction by about 13 ± 4.4‰ with respect to the near normal direction.

Investigations into electronic stopping regime sputtering of uranium tetrafluoride

Yields were measured for ²³⁵U sputtered from UF₄ by ¹⁶O, ¹⁹F, and ³⁵Cl over the energy range ~.12 to 1.5 MeV/ amu sing a charge equilibrated beam in the stripped beam arrangement for all the incident ions and in the transmission arrangement for ¹⁹F and ³⁵Cl. In addition, yields were measured for ¹⁹F incident in a wide range of discrete charge states. The angular dependence of all the measured yields were consistent with cosʋ. The stripped beam and transmission data were well fit by the form (Az²eqln(BƐ)/Ɛ)⁴ (where Ɛ was the ion energy in MeV/amu and z_eq(Ɛ) was taken from Zeigler(80). The fitted values of B for the various sets of data were consistent with a constant B₀, equal to 36.3 ± 2.7, independent of incident ion. The fitted values of A show no consistent variation with incident ion although a difference can be noted between the stripped beam and transmission values, the transmission values being higher.

The incident charge data were well fit by the assumptions that the sputtering yield depended locally on a power of the incident ion charge and that the sputtering from the surface is exponentially correlated to conditions in the bulk. The equilibrated sputtering yields derived from these data are in agreement with the stripped beam yields.

In addition, to aid in the understanding of these data, the data of Hakansson(80,81a,81b) were examined and contrasted with the UF₄ results. The thermal models of Seiberling(80) and Watson(81) were discussed and compared to the data.

Sputtering of insulators in the electronic stopping region

Using track detectors we have measured sputtering yields induced by MeV light ions incident on a uranium containing glass, UO₂ and UF₄. No deviation from the behavior predicted by the Sigmund theory was detected in the glass or the UO₂. The same was true for UF₄ bombarded with ⁴He at 1 MeV and with ¹⁶O and ²⁰Ne at 100 keV. In contrast to this, 4.75 MeV ¹⁹F(+2) sputters uranium from UF₄ with a yield of 5.6 ± 1.0, which is about 3 orders of magnitude larger than expected from the Sigmund theory. The energy dependence of the yield indicates that it is generated by electronic rather than nuclear stopping processes. The yield depends on the charge state of the incident fluorine but not on the target temperature. We have also measured the energy spectrum of the uranium sputtered from the UF₄. Ion explosions, thermal spikes, chemical rearrangement and induced desorption are considered as possible explanations for the anomalous yields.

Sputtering of the gallium-indium eutectic alloy in the liquid phase

We have measured sputtering yields and angular distributions of sputtered atoms from both the solid and liquid phases of gallium, indium, and the gallium-indium eutectic alloy. This was done by Rutherford backscattering analysis of graphite collector foils. The solid eutectic target shows a predominance of indium crystallites on its surface which have to be sputtered away before the composition of the sputtered atoms equals the bulk target composition. The size of the crystallites depends upon the conditions under which the alloy is frozen. The sputtering of the liquid eutectic alloy by 15 keV Ar⁺ results in a ratio of indium to gallium sputtering yields which is 28 times greater than would be expected from the target stoichiometry. Furthermore, the angular distribution of gallium is much more sharply peaked about the normal to the target surface than the indium distribution. When the incident Ar⁺ energy is increased to 25 keV, the gallium distribution broadens to the same shape as the indium distribution. With the exception of the sharp gallium distribution taken from the liquid eutectic at 15 keV, all angular distributions from liquid targets fit a cos² θ function. An ion-scattering-spectroscopy analysis of the liquid eutectic alloy reveals a surface layer of almost pure indium. A thermodynamic explanation for this highly segregated layer is discussed. The liquid eutectic alloy provides us with a unique target system which allows us to estimate the fraction of sputtered material which comes from the first monolayer of the surface.

Thermal, structural and optical properties of NiOx thin films deposited by reactive dc-magnetron sputtering

The NiOx thin films were deposited by reactive dc-magnetron sputtering from a nickel metal target in Ar + O-2 with the relative O-2 content 5%. The as-deposited NiOx, thin films could represent a two-component system comprising crystalline NiO particles dispersed in an amorphous Ni2O3. Decomposition temperature of the as-deposited NiO, thin films was at about 263 degrees C. After annealed at 400 degrees C for 30 min in air, the surface morphology of the films became very rough due to the decomposition of the Ni2O3, leading to the changes of the optical properties of the NiO, thin films. The reflectivity of the films annealed at 400 degrees C was lower than that of the as-deposited one and the optical contrast was 52% at 405 nm. (c) 2006 Elsevier B.V. All rights reserved.

Write-once blue laser recording using silicon doped SbOx thin films prepared by reactive dc-magnetron sputtering

Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O-2 with the relative O-2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. (c) 2007 Elsevier B.V. All rights reserved.

Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire (alpha-Al2O3) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 degrees C for 1 h in air.

Low temperature growth of c-axis oriented AlN films on gamma-LiAlO2 by radio frequency magnetron sputtering

Aluminum nitride (AlN) films were prepared on gamma-LiAlO2 substrates by radio frequency (rf) magnetron sputtering. The influence of substrate temperature (T-s) and nitrogen (N-2) concentration on film growth was investigated. The X-ray diffraction (XRD) results reveal that highly c-axis oriented AlN films can be obtained in the temperature range from room temperature (RT) to 300 degrees C. A smoother surface and a crystalline quality decrease with increasing N-2 concentration have been observed by XRD and atomic force microscopy (AFM) for the films deposited at lower substrate temperature. On the contrary, the degradation of the surface smoothness and the higher crystalline quality can be observed for the films deposited at a higher substrate temperature with N-2-rich ambient. The growth mechanism which leads to different crystalline quality of the films is discussed. (C) 2008 Elsevier B.V. All rights reserved.

Influence of Cr interlayer on the structure and optical properties of Ag films on glass substrate by magnetron sputtering

Optical properties and microstructure of Ag film on glass substrate with Cr intermediate layer were studied by using spectrophotometer and XRD. The spectra results showed that introducing Cr intermediate layer reduced the surface roughness and promoted the reflectivity of Ag film. The XRD analysis showed that the crystalline grains increased and the stress decreased. The adhesion was also improved by using the tape test method. (c) 2006 Published by Elsevier B.V.

Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films

The effects of oxygen partial pressure on the structure and photoluminescence (PL) of ZnO films were studied. The films were prepared by direct current (DC) reactive magnetron sputtering with various oxygen concentrations at room temperature. With increasing oxygen ratio, the structure of films changes from zinc and zinc oxide phases, single-phase ZnO, to the (002) orientation, and the mechanical stresses exhibit from tensile stress to compressive stress. Films deposited at higher oxygen pressure show weaker emission intensities, which may result from the decrease of the oxygen vacancies and zinc interstitials in the film. This indicates that the emission in ZnO film originates from the oxygen vacancy and zinc interstitial-related defects. From optical transmittance spectra of ZnO films, the plasma edge shifts towards the shorter wavelength with the improvement of film stoichiometry. (C) 2004 Elsevier B.V. All rights reserved.

Investigation on the properties of high reflective mirror prepared by ion-beam sputtering

The single-sided and dual-sided high reflective mirrors were deposited with ion-beam sputtering (IBS). When the incident light entered with 45 degrees, the reflectance of p-polarized light at 1064 nm exceeded 99.5%. Spectrum was gained by spectrometer and weak absorption of coatings was measured by surface thermal lensing (STL) technique. Laser-induced damage threshold (LIDT) was determined and the damage morphology was observed with Lecia-DMRXE microscope simultaneously. The profile of coatings was measured with Mark III-GPI digital interferometer. It was found that the reflectivity of mirror exceeded 99.9% and its absorption was as low as 14 ppm. The reflective bandwidth of the dual-sided sample was about 43 nm wider than that of single-sided sample, and its LIDT was as high as 28 J/cm2, which was 5 J/cm2 higher than that of single-sided sample. Moreover, the profile of dual-sided sample was better than that of substrate without coatings.