Targeted disruption of the Rad51 gene leads to lethality in embryonic mice.

The mouse Rad51 gene is a mammalian homologue of the Escherichia coli recA and yeast RAD51 genes, both of which are involved in homologous recombination and DNA repair. To elucidate the physiological role of RAD51 protein, the gene was targeted in embryonic stem (ES) cells. Mice heterozygous for the Rad51 null mutation were intercrossed and their offspring were genotyped. There were no homozygous (Rad51-/-) pups among 148 neonates examined but a few Rad51-/- embryos were identified when examined during the early stages of embryonic development. Doubly knocked-out ES cells were not detected under conditions of selective growth. These results are interpreted to mean that RAD51 protein plays an essential role in the proliferation of cell. The homozygous Rad51 null mutation can be categorized in cell-autonomous defects. Pre-implantational lethal mutations that disrupt basic molecular functions will thus interfere with cell viability.

Mutation detection by highly sensitive methods indicates that p53 gene mutations in breast cancer can have important prognostic value.

Human cancer cells with a mutated p53 tumor-suppressor gene have a selective growth advantage and may exhibit resistance to ionizing radiation and certain chemotherapeutic agents. To examine the prognostic value of mutations in the p53 gene, a cohort of 90 Midwestern Caucasian breast cancer patients were analyzed with methodology that detects virtually 100% of all mutations. The presence of a p53 gene mutation was by far the single most predictive indicator for recurrence and death (relative risks of 4.7 and 23.2, respectively). Direct detection of p53 mutations had substantially greater prognostic value than immunohistochemical detection of p53 overexpression. Analysis of p53 gene mutations may permit identification of a subset of breast cancer patients who, despite lack of conventional indicators of poor prognosis, are at high risk of early recurrence and death.

Nano-Engineering of Densely Packed Electrochemical Energy Storage Architectures by Atomic Layer Deposition

Nanostructures are highly attractive for future electrical energy storage devices because they enable large surface area and short ion transport time through thin electrode layers for high power devices. Significant enhancement in power density of batteries has been achieved by nano-engineered structures, particularly anode and cathode nanostructures spatially separated far apart by a porous membrane and/or a defined electrolyte region. A self-aligned nanostructured battery fully confined within a single nanopore presents a powerful platform to determine the rate performance and cyclability limits of nanostructured storage devices. Atomic layer deposition (ALD) has enabled us to create and evaluate such structures, comprised of nanotubular electrodes and electrolyte confined within anodic aluminum oxide (AAO) nanopores. The V2O5- V2O5 symmetric nanopore battery displays exceptional power-energy performance and cyclability when tested as a massively parallel device (~2billion/cm2), each with ~1m3 volume (~1fL). Cycled between 0.2V and 1.8V, this full cell has capacity retention of 95% at 5C rate and 46% at 150C, with more than 1000 charge/discharge cycles. These results demonstrate the promise of ultrasmall, self-aligned/regular, densely packed nanobattery structures as a testbed to study ionics and electrodics at the nanoscale with various geometrical modifications and as a building block for high performance energy storage systems[1, 2]. Further increase of full cell output potential is also demonstrated in asymmetric full cell configurations with various low voltage anode materials. The asymmetric full cell nanopore batteries, comprised of V2O5 as cathode and prelithiated SnO2 or anatase phase TiO2 as anode, with integrated nanotubular metal current collectors underneath each nanotubular storage electrode, also enabled by ALD. By controlling the amount of lithium ion prelithiated into SnO2 anode, we can tune full cell output voltage in the range of 0.3V and 3V. This asymmetric nanopore battery array displays exceptional rate performance and cyclability. When cycled between 1V and 3V, it has capacity retention of approximately 73% at 200C rate compared to 1C, with only 2% capacity loss after more than 500 charge/discharge cycles. With increased full cell output potential, the asymmetric V2O5-SnO2 nanopore battery shows significantly improved energy and power density. This configuration presents a more realistic test - through its asymmetric (vs symmetric) configuration – of performance and cyclability in nanoconfined environment. This dissertation covers (1) Ultra small electrochemical storage platform design and fabrication, (2) Electron and ion transport in nanostructured electrodes inside a half cell configuration, (3) Ion transport between anode and cathode in confined nanochannels in symmetric full cells, (4) Scale up energy and power density with geometry optimization and low voltage anode materials in asymmetric full cell configurations. As a supplement, selective growth of ALD to improve graphene conductance will also be discussed[3]. References: 1. Liu, C., et al., (Invited) A Rational Design for Batteries at Nanoscale by Atomic Layer Deposition. ECS Transactions, 2015. 69(7): p. 23-30. 2. Liu, C.Y., et al., An all-in-one nanopore battery array. Nature Nanotechnology, 2014. 9(12): p. 1031-1039. 3. Liu, C., et al., Improving Graphene Conductivity through Selective Atomic Layer Deposition. ECS Transactions, 2015. 69(7): p. 133-138.

An MMP13-selective inhibitor delays primary tumor growth and the onset of tumor-associated osteolytic lesions in experimental models of breast cancer

We investigated the effects of the matrix metalloproteinase 13 (MMP13)-selective inhibitor, 5-(4-{4-[4-(4-fluorophenyl)-1,3-oxazol-2-yl]phenoxy}phenoxy)-5-(2-methoxyethyl) pyrimidine-2,4,6(1H,3H,5H)-trione (Cmpd-1), on the primary tumor growth and breast cancer-associated bone remodeling using xenograft and syngeneic mouse models. We used human breast cancer MDA-MB-231 cells inoculated into the mammary fat pad and left ventricle of BALB/c Nu/Nu mice, respectively, and spontaneously metastasizing 4T1.2-Luc mouse mammary cells inoculated into mammary fat pad of BALB/c mice. In a prevention setting, treatment with Cmpd-1 markedly delayed the growth of primary tumors in both models, and reduced the onset and severity of osteolytic lesions in the MDA-MB-231 intracardiac model. Intervention treatment with Cmpd-1 on established MDA-MB-231 primary tumors also significantly inhibited subsequent growth. In contrast, no effects of Cmpd-1 were observed on soft organ metastatic burden following intracardiac or mammary fat pad inoculations of MDA-MB-231 and 4T1.2-Luc cells respectively. MMP13 immunostaining of clinical primary breast tumors and experimental mice tumors revealed intra-tumoral and stromal expression in most tumors, and vasculature expression in all. MMP13 was also detected in osteoblasts in clinical samples of breast-to-bone metastases. The data suggest that MMP13-selective inhibitors, which lack musculoskeletal side effects, may have therapeutic potential both in primary breast cancer and cancer-induced bone osteolysis.

Size- and orientation-selective Si nanowire growth : thermokinetic effects of naeoscale plasma chemistry

A multiscale, multiphase thermokinetic model is used to show the effective control of the growth orientation of thin Si NWs for nanoelectronic devices enabled by nanoscale plasma chemistry. It is shown that very thin Si NWs with [110] growth direction can nucleate at much lower process temperatures and pressures compared to thermal chemical vapor deposition where [111]-directed Si NWs are predominantly grown. These findings explain a host of experimental results and offer the possibility of energy- and matter-efficient, size- and orientation-controlled growth of [110] Si NWs for next-generation nanodevices.

Selective epitaxial growth in silicon on insulator: Planarity and mass flow

Seeded zone-melt recrystallization using a dual electron beam system has been performed on silicon-on-insulator material, which was prepared with single-crystal silicon filling of the seed windows by selective epitaxial growth. The crystal quality has been assessed by a variety of microscopic techniques, and it is shown that single-crystal films 0.5-1.0 μm thick over 1.0 μm of isolating oxide may be prepared by this method. These films have considerably less lateral variation in thickness than standard material, in which the windows are not so filled. The filling method is suitable for both single- and multiple-layer silicon-on-insulator, and gives the advantages of excellent layer uniformity after recrystallization and improved planarity of the whole chip structure. Experiments using various amounts of seed window filling have shown that the lateral variations of silicon film thickness seen in unplanarized material are due to stress relief in the cap oxide when the silicon film is molten, rather than the effect previously postulated in which they were assumed to be due to the contraction of silicon on melting.

Effects of some selective supplemental feeds on the survival and growth of catfish (Clarias batrachus Lin.) fry

Feeding experiments were conducted for 21 days to study the effect of live food (Tubifex sp.) and three prepared supplemental feeds on the growth and survival of 13 day old magur (C. batrachus) fry. It was observed that the growth of fry varied significantly (p<0.05) with different diets. The best growth was shown by the fry fed with Tubifex sp. followed by those fed with the diet containing yeast (30%), milk powder (30%) and chicken eggs (30%). The poorest growth rate was given by the fry fed on yeast (45%) and fish meal (45%). There was no significant difference in survival rates and condition factors among the fry fed with live food and prepared feeds.

Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing

We present the monolithic integration of a sampled-grating distributed Bragg reflector (SC-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55 mbar) selective-area-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current I-th = 62 mA, and output power reaches 3.6 mW. The wavelength tuning range covers 30 nm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14 dB with bias of -5 V.

A selective area growth double stack active layer electroabsorption modulator integrated with a distributed feedback laser

A new method for fabricating electroabsorption modulator integrated with a distributed feedback laser (EML) was proposed. With the method we fabricated a selective area growth double stack active layer EML (SAG-DSAL-EML). Through comparing with other fabrication methods of EMLs, the characters and the merits of the new method presented in this paper were discussed.

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation

　

A 10-GHz bandwidth electroabsorption modulated laser by ultra-low-pressure selective area growth

A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multi-quantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30 mu m). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19 mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.

Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD

The design and basic characteristics of a strained InGaAsP-InP multiple-quantum-well (MQW) DFB laser monolithically integrated with an electroabsorption modulator (EAM) by ultra-low-pressure (22 mbar) selective-area-growth (SAG) MOCVD are presented. A fundamental study of the controllability and the applicability of band-gap energy by using the SAG, method is performed. A large band-gap photoluminescence wavelength shift of 88 mn. was obtained with a small mask width variation (0-30 mu m). The technique is then applied to fabricate a high performance strained MQW EAM integrated with a DFB laser. The threshold current of 26 mA at CW operation of the device with DFB laser length of 300 mu m and EAM length of 150 mu m has been realized at a modulator bias of 0 V. The devices also exhibit 15 dB on/off ratio at an applied bias voltage of 5 V.

Electroabsoorption-modulated laser light-source module using selective area growth for 10 Gb/s transmission

In this work, a novel light source of strained InGaAsP/InGaAsP MQW EAM monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 x 10(2) Pa) selective area growth ( SAG) MOCVD technique. Superior device performances have been obtained, sue h as low threshold current of 19 mA, output light power of about 7 mW, and over 16 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3 dB bandwidth in EAM part is developed with a driving voltage of 3 V. After the chip is packaged into a 7-pin butterfly compact module, 10-Gb/s NRZ transmission experiments are successfully performed in standard fiber. A clearly-open eye diagram is achieved in the module output with over 8.3 dB dynamic extinction ratio. Power penalty less than 1.5 dB has been obtained after transmission through 53.3 km of standard fiber, which demonstrates that high-speed, low chirp EAM/DFB integrated light source can be obtained by ultra-low-pressure (22 x 102 Pa) SAG method.