975 resultados para TUNING RANGE


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A 1.55 mu m InGaAsP-InP partly gain-coupled two-section DFB self-pulsation laser (SPL) with a varied ridge width has been fabricated. The laser produces self-pulsations with a frequency tuning range of more than 135 GHz. All-optical clock recovery from 40 Gb/s degraded data streams has been demonstrated. Successful lockings of the device at frequencies of 30 GHz, 40 GHz, 50 GHz, and 60 GHz to a 10 GHz sidemode injection are also conducted, which demonstrates the capability of the device for all-optical clock recovery at different frequencies. This flexibility of the device is highly desired for practical uses. Crown Copyright

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The analysis and calculation of the compensation for the phase mismatch of the frequency-doubling using the frequency space chirp introduced from prisms are made. The result shows that suitable lens can compensate the phase mismatch in a certain extent resulting from wide femtosecond spectrum when the spectrum is space chirped. By means of this method, the experiment of second harmonic generation is carried out using a home-made femtosecond KLM Ti:sapphire laser and BBO crystal. The conversion efficiency of SHG is 63 %. The average output power of blue light is 320 mW. The central wavelength is 420 nm. The spectrum bandwidth is 5.5 nm. It can sustain the pulse width of 33.6 fs. The tuning range of blue light is 404-420 nm,when the femtosecond Ti:sapphire optical pulse is tuned using the prisms in the cavity.

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DFB lasers with continuously and arbitrarily chirped gratings of ultrahigh spatial precision are implemented by a method we proposed recently, using bent waveguides on homogeneous grating fields. Choosing individual bending functions we generate special chirping functions and obtain additional degrees of freedom to tailor and improve specific device performances, We present two applications for lasers showing several improved device properties and the effectiveness of our method, First, we implement continuously distributed phase-shifted lasers, revealing a considerably reduced photon pile-up, higher single-longitudinal mode stability, higher output power, lower linewidth, and higher yield than conventional abruptly phase-shifted lasers, Second, a novel tuning principle is applied in chirped multiple-section DFB lasers, showing 5.5-nm wavelength tuning, without any gaps, maintaining high side-mode suppression.

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We have implemented and studied a new type of tunable multiple-section semiconductor distributed feedback (DFB) laser using tailored chirped DFB gratings. Arbitrarily and continuously chirped DFB gratings are defined by bent waveguides on homogeneous grating fields with ultrahigh spatial precision, The mathematical bending functions are optimized in this case to provide enlarged wavelength tuning ranges. We present the results of model calculations, the technological device realization and experimental results of the DFB laser characterization e.g. a tuning range of 5.5 mm without wavelength gaps and high side mode suppression ratio.

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This paper presents a wide tuning range CMOS frequency synthesizer for a dual-band GPS receiver,which has been fabricated in a standard 0.18μm RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45 and 3.14GHz in case of process corner or temperature variation,with a current consumption varying accordingly from 0.8 to 0.4mA,from a 1.8V supply voltage. Measurement results show that the whole frequency synthesizer consumes very low power of 5.6mW working at L1 band with in-band phase noise less than - 82dBc/Hz and out-of-band phase noise about - ll2dBc/Hz at 1MHz offset from a 3. 142GHz carrier. The performance of the frequency synthesizer meets the requirements of GPS applications very well.

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This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing (QWI) for the first time in mainland China. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.

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A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated using offset quantum-well inethod. The distributed Bragg reflector (DBR) was realized just by selectively wet etching the multiquantum-well (MQW) layer above the quaternary lower waveguide. A threshold current of 32 mA and an output power of 9 mW at 100 mA were achieved. Furthermore, with this offset structure method, a distributed feedback (DFB) laser was integrated with an electro-absorption modulator (EAM), which was capable of producing 20 dB of optical extinction.

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We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.

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A GaAs-based micro-opto-electro-mech anical-systems(MOEMS) tunable resonant cavity enhanced(RCE)photodetector with a continuous tuning range of 31nm under a 6V tuning voltage is demonstrated. The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector. The maximum and minimum peak quantum efficiency during the tuning are 36.9 % and 30. 8 %, respectively. The maximum and minimum full-width-at-halfmaximum (FWHM) are 20nm and 14nm,respectively. The dark current density is 7.46A/m2 without bias.

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The 3-section SG-DBR tunable laser is fabricated using an ion implantation quantum-well intermixing process. The over 30nm discontinuous tuning range is achieved with the SMRS greater than 30dB.

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An integratable distributed Bragg reflector laser is fabricated by low-energy ion implantation induced quantum well intermixing. A 4.6nm quasi-continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.

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A prototype 1.55-μm Si-based micro-opto-electro-mechanical-systems (MOEMS) tunable filter is fabricated, employing surface micromachining technology. Full-width-at-half-maximum (FWHM) of the transmission spectrum is 23 nm. The tuning range is 30 nm under 50-V applied voltage. The device can be readily integrated with resonant cavity enhanced (RCE) detector and vertical cavity surface emitting laser (VCSEL) to fabricate tunable active devices.

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A 1.55μm Fabry-Perot (F-P) thermo-optical tunable filter is fabricated. The cavity is made of amorphous silicon (a-Si) layer grown by electron-beam evaporation technique. Due to the excellent thermo-optical property of a-Si, the refractive index of the F-P cavity will be changed by heating; the transmittance resonant peak will therefore shift substantially. The measured tuning range is 12nm, FWHM (full-width-at-half-maximum) of the transmission peak is 9nm, and heating efficiency is 0.1K/mW. The large FWHM is mainly due to the non-ideal coating deposition and mirror undulation. Possible improvements to increase the efficiency of heating are suggested.

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The tunable ridge waveguide distributed Bragg reflector (DBR) lasers designed for wavelength-division-multiplex (WDM) communication systems at 1.55 um by using selective area growth (SAG) is reported. The threshold current of the DBR laser is 62mA and the output power is more than 8mW. The isolation resistance between the active region and the Bragg region is 30K Ohm. The total tuning range is 6.5nm and this DBR laser can provide 6 continuous standard WDM channels with 100GHz channel spacing; in the tuning range, the single mode suppression ratio (SMSR) is maintained more than 32dB and the maximum output power variation is less than 3dB.

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In this paper, an experiment on tunable resonant cavity enhanced (RCE) photodetector with external cavity is reported. It is the first time to realize a tunable RCE photodetector in China. A tuning range about 10 nm has been obtained and further extension is expected. Corresponding theoretical analysis and discussions are presented. (C) 2000 Elsevier Science B.V. All rights reserved.