An Integratable Distributed Bragg Reflector Laser by Low-Energy Ion Implantation Induced Quantum Well Intermixing


Autoria(s): Zhang Jing; Lu Yu; Zhao Lingjuan; Zhou Fan; Wang Baojun; Wang Wei
Data(s)

2004

Resumo

An integratable distributed Bragg reflector laser is fabricated by low-energy ion implantation induced quantum well intermixing. A 4.6nm quasi-continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.

国家高技术研究发展计划,国家重点基础研究发展规划

Identificador

http://ir.semi.ac.cn/handle/172111/17355

http://www.irgrid.ac.cn/handle/1471x/103315

Idioma(s)

英语

Fonte

Zhang Jing;Lu Yu;Zhao Lingjuan;Zhou Fan;Wang Baojun;Wang Wei.An Integratable Distributed Bragg Reflector Laser by Low-Energy Ion Implantation Induced Quantum Well Intermixing,半导体学报,2004,25(8):894-897

Palavras-Chave #半导体材料
Tipo

期刊论文