917 resultados para Step potential well


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We study the transient response of a colloidal bead which is released from different heights and allowed to relax in the potential well of an optical trap. Depending on the initial potential energy, the system's time evolution shows dramatically different behaviors. Starting from the short-time reversible to long-time irreversible transition, a stationary reversible state with zero net dissipation can be achieved as the release point energy is decreased. If the system starts with even lower energy, it progressively extracts useful work from thermal noise and exhibits an anomalous irreversibility. In addition, we have verified the Transient Fluctuation Theorem and the Integrated Transient Fluctuation Theorem even for the non-ergodic descriptions of our system. Copyright (C) EPLA, 2011

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X-ray diffraction measurements and subsequent data analyses have been carried out on liquid argon at five states in the density range of 0.91 to 1.135 gm/cc and temperature range of 127 to 143°K. Duplicate measurements were made on all states. These data yielded radial distribution and direct correlation functions which were then used to compute the pair potential using the Percus-Yevick equation. The potential minima are in the range of -105 to -120°K and appear to substantiate current theoretical estimates of the effective pair potential in the presence of a weak three-body force.

The data analysis procedure used was new and does not distinguish between the coherent and incoherent absorption factors for the cell scattering which were essentially equal. With this simplification, the argon scattering estimate was compared to the gas scattering estimate on the laboratory frame of reference and the two estimates coincided, indicating the data normalized. The argon scattering on the laboratory frame of reference was examined for the existence of the peaks in the structure factor and the existence of an observable third peak was considered doubtful.

Numerical studies of the effect of truncation, normalization, the subsidiary peak phenomenon in the radial distribution function, uncertainties in the low angle data relative to errors in the direct correlation function and the distortion phenomenon are presented.

The distortion phenomenon for this experiment explains why the Mikolaj-Pings argon data yielded pair potential well depths from the Percus-Yevick equation that were too shallow and an apparent slope with respect to density that was too steep compared to theoretical estimates.

The data presented for each measurement are: empty cell and cell plus argon intensity, absorption factors, argon intensity, smoothed argon intensity, smoothed argon intensity corrected for distortion, structure factor, radial distribution function, direct correlation function and the pair potential from the Percus-Yevick equation.

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Resonant tunnelling spectroscopy is used to investigate the energy level spectrum of a wide potential well in the presence of a large magnetic field oriented at angles θ between 0° and 90° to the normal to the plane of the well. In the tilted field geometry, the current-voltage characteristics exhibit a large number of quasiperiodic resonant peaks even though the classical motion of electrons in the potential well is chaotic. The voltage range and spacing of the resonances both change dramatically with θ. We give a quantitative explanation for this behaviour by considering the classical period of unstable periodic orbits within the chaotic sea of the potential well.

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We theoretically investigate the energy spectra of two-electron two-dimensional (2e 2D) quantum dots (QDs) confined by triangular potentials and bowl-like potentials in a magnetic field by exact diagonalization in the framework of effective mass theory. An in-plane electric field is,found to contribute to the singlet-triplet transition of the ground state of the 2e 2D QDs confined by triangular or bowl-like potentials in a perpendicular magnetic field. The stronger the in-plane electric field, the smaller the magnetic field for the total spin of the ground states in the dot systems to change from S = 0 to S = 1. However, the influence of an in-plane electric field on the singlet-triplet transition of the ground state of two electrons in a triangular QD modulated by a perpendicular magnetic field is quite small because the triangular potential just deviates from the harmonic potential well slightly. We End that the strength of the perpendicular magnetic field needed for the spin singlet-triplet transition of the ground state of the QD confined by a bowl-like potential is reduced drastically by applying an in-plane electric field.

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An electroabsorption modulator using an intra-step quantum well (IQW) active region is fabricated for a radio over fibre system. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency (10 dB V-1) and low capacitance (< 0.42 pF), with which high frequency (> 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to an excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for a multi-quantum well EAM without a heat sink.

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Electron mobility limited by nitrogen vacancy scattering was taken into account to evaluate the quality of n-type GaN grown by metal-organic vapor phase epitaxy. Two assumptions were made for this potential for the nitrogen vacancy (1) it acts in a short range, and (2) does not diverge at the vacancy core. According to the above assumptions, a general expression to describe the scattering potential U(r) = - U-0 exp[- (r/beta)(n)], (n = 1, 2,...,infinity) was constructed, where beta is the potential well width. The mobilities for n = 1, 2, and infinity were calculated based on this equation, corresponding to the simple exponential, Gaussian and square well scattering potentials, respectively. In the limiting case of kbeta << 1 (where k is the wave vector), all of the mobilities calculated for n = 1, 2, and infinity showed a same result but different prefactor. Such difference was discussed in terms of the potential tail and was found that all of the calculated mobilities have T-1/2 temperature and beta(-6) well width dependences. A mobility taking account of a spatially complicate scattering potential was studied and the same temperature dependence was also found. A best fit between the calculated results and experimental data was obtained by taking account of the nitrogen vacancy scattering. (C) 2002 Elsevier Science Ltd. All rights reserved.

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Electron mobility limited by nitrogen vacancy scattering was taken into account to evaluate the quality of n-type GaN grown by metal-organic vapor phase epitaxy. The nitrogen vacancy scattering potential used for our mobility calculation has to satisfy two requirements: such potential is (1) spatially short range, and (2) finite and not divergent at the vacancy core. A square-well potential was adopted to calculate the mobility, because it satisfies not only these two requirements, but also simplifies the calculation. As a result, the estimated mobility shows a T-1/2 temperature dependence, and is very sensitive to the potential well width. After introducing the nitrogen vacancy scattering, we obtained the best fitting between the calculated and experimental results for our high quality sample, and it was found that the measured mobility is dominated by ion impurity and dislocation scatterings at the low temperatures, but dominated by optical phonon and nitrogen vacancy scatterings at the high temperatures. (C) 2000 American Institute of Physics. [S0003-6951(00)04112-7].

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High-quality InGaAs/InAlAs/InP high-electron-mobility transistor (HEMT) structures with lattice-matched or pseudomorphic channels have been grown by molecular-beam epitaxy (MBE). The purpose of this work is to enhance the channel conductivity by changing the epitaxial structure and growth process. With the use of pseudomorphic step quantum-well channel, the highest channel conductivity is achieved at x = 0.7, the corresponding electron mobilities are as high as 12300 (300 K) and 61000 cm(2)/V.s (77 K) with two-dimensional electron gas (2DEG) density of 3.3 x 10(12) cm(-2). These structures are comprehensively characterized by Hall measurements, photoluminescence, double crystal X-ray diffraction and transmission electron microscopy. Strong room-temperature luminescence is observed, demonstrating the high optical quality of the samples. We also show that decreasing the In composition in the InyAl1-yAs spacer is very effective to increase the 2DEG density of PHEMT structures. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

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We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 Omega thin-film resistor and a bypass capacitor integrated on a chip.

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This paper discusses the Klein–Gordon–Zakharov system with different-degree nonlinearities in two and three space dimensions. Firstly, we prove the existence of standing wave with ground state by applying an intricate variational argument. Next, by introducing an auxiliary functional and an equivalent minimization problem, we obtain two invariant manifolds under the solution flow generated by the Cauchy problem to the aforementioned Klein–Gordon–Zakharov system. Furthermore, by constructing a type of constrained variational problem, utilizing the above two invariant manifolds as well as applying potential well argument and concavity method, we derive a sharp threshold for global existence and blowup. Then, combining the above results, we obtain two conclusions of how small the initial data are for the solution to exist globally by using dilation transformation. Finally, we prove a modified instability of standing wave to the system under study.

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We consider the effect of image forces, arising due to a difference in dielectric permeabilities of the well layer and barrier layers, on the energy spectrum of an electron confined in a rectangular potential well under a magnetic field. Depending on the value and the sign of the dielectric mismatch, image forces can localize electrons near the interfaces of the well or in well centre and change the direct intersubband gaps into indirect ones. These effects can be controlled by variation of the magnetic field, offering possibilities for exact tuning of electronic devices.

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A theoretical study is presented of the lateral confinement potential (CP) in the very narrow mesa channels fabricated in the conventional two-dimensional (2D) electron gas in GaAs-AlxGa1-xAs heterostructures. The ID electronic structures are calculated in the framework of the confinement potential: V(x) = m* omega0(2)x2/2 for Absolute value of x potential well, are the effective width and the characteristic frequency, respectively. Calculations suggest that, for wires having structural widths W(str) = 1500, 550, and 500 nm, the CP models consisting of flat bottoms and soft walls are more realistic than this complex potential. The experimental result for a wire of W(str) = 250 nm cannot be explained within the composite-well model including these two cases. Thus how to explain the experiment for this wire remains an open question.

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We experimentally study the effect of perpendicular electric field on the exciton binding energy using a specially designed step quantum well. From photoluminescence spectra at the temperature of 77 K, we have directly observed remarkable blueshift of the exciton peak due to the transition from spatially direct to spatially indirect excitons induced by electric field. (C) 1995 American Institute of Physics.

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A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a two-step low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

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The rate constant of very fast chemical reaction generally can be measured by electrochemical methods, but can not by the thin layer electrochemical methods because of the influence of diffusion effect. Long optical path length thin layer cell (LOPTLC) with large ratio of electrode area to solution volume can be used to monitor the fist chemical reaction in situ with high sensitivity and accuracy. It enable the adsorption spectra to be measured without the influence of diffusion effect. In the present paper, a fast chemical reaction of Alizarin Red S (ARS) with its oxidative state has been studied. The reaction equilibrium constant (K) under different potentials can be determined by single step potential-absorption spectra in LOPTLC. An equilibrium constant of 7.94 x 10(5) l.mol(-1) for the chemical reaction has been obtained from the plot of lgK vs. (E - E-1(0)'). Rate constant (k) under different potentials can be measured by single step potential-chronoabsorptiometry. A rate constant of 426.6 l.mol(-1).s(-1) for the chemical reaction has been obtained from the plot of lgK vs. (E - E-1(0)') with (E - E-1(0)') = 0.